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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC057N03LSGATMA1

Name: BSC057N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC057N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC057N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC057N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 17A/71A TDSON

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Product details

Overview

BSC057N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS applications. It delivers 30 V V_DS, 5.7 mΩ R_DS(on) at V_GS = 10 V, 71 A continuous drain current at T_C = 25 °C, and is avalanche-rated with JEDEC qualification for industrial power stages.

For engineers reviewing the BSC057N03LSGATMA1 datasheet, BSC057N03LSGATMA1 pinout, BSC057N03LSGATMA1 application, or BSC057N03LSGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), 4.5 V logic-level drive compatibility, superior thermal resistance (R_thJC = 2.8 K/W), and integrated avalanche ruggedness for reliable switching under transient stress.

Technical Context

This OptiMOS™3 device uses trench-based silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate threshold voltage (1–2.2 V) enables robust turn-on with standard logic-level drivers, while the 22 nC total gate charge (V_DD = 15 V, I_D = 30 A) supports high-frequency operation up to several hundred kHz in synchronous buck topologies.

The MOSFET integrates a co-packaged body diode with 0.85–1.1 V forward voltage at 30 A and 25 °C, and exhibits 10 nC reverse recovery charge under defined di/dt conditions. Its safe operating area (SOA) is characterized for single-pulse operation up to 284 A, with thermal impedance Z_thJC validated down to 1 µs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input DC/DC stages
R_DS(on) max	5.7 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 40 A in compact thermal layouts
I_D cont.	71 A at T_C = 25 °C - Supports high-current POL converters without paralleling
Q_g total	22–30 nC - Determines gate driver power requirement and switching speed trade-off
R_thJC	2.8 K/W - Allows direct heatsinking via exposed drain pad for efficient thermal management
E_AS	25 mJ - Specifies single-pulse avalanche energy handling capability for inductive load transients
V_GS(th)	1–2.2 V - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V microcontroller GPIO

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), RoHS-compliant, halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source connection; pins electrically tied internally for low-inductance return path
4	Gate	Control terminal; requires <2.3 Ω gate resistance for optimal EMI and ringing control
8	Drain	Exposed thermal pad - must be soldered to PCB copper pour for thermal and electrical connection

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 3.3 V/5 V control systems
Low Q_g × R_DS(on) FOM	~126 mΩ·nC - balances switching loss and conduction loss for peak efficiency at 300–500 kHz
Avalanche-rated	Rated for repetitive single-pulse avalanche (I_AS = 50 A, E_AS = 25 mJ) - enhances reliability in hard-switched or fault-prone topologies
Superior thermal resistance	R_thJC = 2.8 K/W - enables >40 W power dissipation with minimal junction-to-case temperature rise
Optimized for synchronous rectification	Q_g(sync) = 9.4–13 nC at V_GS = 0–4.5 V - reduces gate drive loss in low-side FET position of buck converters

Applications

Server VRMs

Industrial DC/DC Modules

Use Scenario: Point-of-load regulation in 1U server motherboards delivering 50–100 A to CPU/GPU cores.

IC Role / Device Role: High-side or synchronous rectifier MOSFET in multiphase buck converters.

Use Value: 5.7 mΩ R_DS(on) and 22 nC Q_g enable >95% efficiency at 500 kHz switching with minimal thermal derating.

Use Scenario: Isolated 24 V to 5 V/3.3 V conversion in programmable logic controllers (PLCs) and motor drives.

IC Role / Device Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier.

Use Value: Avalanche rating and 150 °C T_j,max ensure robustness against bus transients and ambient temperature extremes.

Telecom Power Supplies

Automotive ADAS ECUs

Use Scenario: 48 V intermediate bus conversion in 5G base station power shelves.

IC Role / Device Role: High-efficiency primary switch in half-bridge LLC resonant converters.

Use Value: Low C_oss (690–920 pF) and fast dv/dt immunity (6 kV/µs) reduce switching losses and EMI generation.

Use Scenario: Compact 12 V to 1.2 V core supply for radar processors and camera SoCs.

IC Role / Device Role: Synchronous buck FET in space-constrained automotive-grade DC/DC modules.

Use Value: PG-TDSON-8 package with exposed drain meets AEC-Q101 thermal and mechanical requirements for under-hood deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB057N03LGATMA1	Same R_DS(on) (5.7 mΩ), but in TO-263-7 package; higher R_thJA (50 K/W vs. 2.8 K/W case)	Preferred where through-hole mounting or higher creepage is required; less suitable for ultra-thin board designs	Select when board-level thermal mass is limited and external heatsinking is available
IRLHS6342TRPBF	Higher R_DS(on) (8.5 mΩ), lower Q_g (14 nC), same PG-TDSON-8 footprint	Better suited for very high-frequency (>1 MHz) low-current applications where switching loss dominates	Choose when prioritizing gate drive efficiency over conduction loss in sub-20 A loads

Compared with IPB057N03LGATMA1 and IRLHS6342TRPBF, BSC057N03LSGATMA1 offers the best balance of low R_DS(on), low R_thJC, and logic-level drive for high-current, thermally constrained DC/DC stages - especially where PCB real estate and thermal performance are critical.

Availability

BSC057N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC057N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-power-density DC/DC conversion in computing, industrial, and communications infrastructure.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSC057N03LSGATMA1 has a specified operating junction temperature range of –55 °C to +150 °C. For continuous operation, the absolute maximum T_j is 150 °C, and thermal design must ensure this limit is not exceeded under worst-case ambient and power dissipation conditions, using the provided R_thJC = 2.8 K/W and R_thJA = 50 K/W values.

Is this MOSFET suitable for synchronous rectification in a buck converter?

Yes - it is explicitly optimized for synchronous rectification, with Q_g(sync) = 9.4–13 nC at V_GS = 0–4.5 V and low R_DS(on) enabling high efficiency in the low-side position. Its body diode's 10 nC Q_rr and 6 kV/µs dv/dt rating further support clean commutation in high-frequency buck topologies.

Does the PG-TDSON-8 package require special PCB layout considerations?

Yes - the exposed drain pad (Pin 8) must be soldered to a minimum 6 cm² copper area on the PCB for thermal and electrical performance. The recommended layout uses a vertical FR4 board with 70 µm copper thickness; insufficient copper area will degrade R_thJA and cause premature thermal shutdown or parametric drift.

How does the avalanche rating impact system-level reliability?

The device is rated for single-pulse avalanche energy E_AS = 25 mJ at I_D = 40 A, providing margin against inductive switching spikes and short-circuit events. This ruggedness allows simplified protection circuitry in non-isolated DC/DC stages, reducing bill-of-materials cost while maintaining functional safety in industrial and telecom applications.

BSC057N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC057N03LSGATMA1 FAQ

1.How can I place an order for BSC057N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC057N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC057N03LSGATMA1 reliable?

The price and inventory of BSC057N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC057N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC057N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC057N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC057N03LSGATMA1?

BSC057N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC057N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC057N03LSGATMA1?

For technical support, including BSC057N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC057N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC057N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC057N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC057N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC057N03LSGATMA1?

All BSC057N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC057N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC057N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC057N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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