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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC059N03S G

Name: BSC059N03S G
Brand: Infineon Technologies
SKU: BSC059N03S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC059N03S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC059N03S G.pdf

Description:: MOSFET N-CH 30V 17.5A/73A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC059N03S G from Infineon Technologies is a 30 V, 5.9 mΩ N-channel enhancement-mode MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, optimized for high-efficiency synchronous buck converters and load switches in server VRMs and telecom DC-DC modules. It delivers 100 A continuous drain current at T_C = 25 °C, features 100% avalanche-rated ruggedness, and supports logic-level gate drive down to 4.5 V.

For engineers reviewing the BSC059N03S G datasheet, BSC059N03S G pinout, BSC059N03S G application, or BSC059N03S G equivalent, key selection criteria include R_DS(on) at 4.5 V V_GS, gate charge (Q_g = 27 nC), thermal resistance (R_thJC = 0.9 K/W), and SOA compliance under pulsed switching conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, enabling low conduction loss with minimal gate charge trade-off. Its vertical trench structure achieves <5.9 mΩ R_DS(on) at V_GS = 10 V while maintaining fast switching (t_on = 13 ns, t_off = 22 ns) and robust body diode recovery (Q_rr = 42 nC).

The device integrates a monolithic source-connected Kelvin sense pin (Pin 1) for accurate high-side current sensing and reduced gate loop inductance. Its thermally enhanced exposed-drain pad ensures direct PCB copper thermal coupling, supporting >100 A operation with single-layer 2 oz Cu cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V/3.3 V output rails.
R_DS(on) @ V_GS = 10 V	5.9 mΩ - Enables ≤1.2 W conduction loss at 50 A, critical for VRM efficiency targets ≥95%.
Q_g	27 nC - Low total gate charge reduces driver power and enables 1–2 MHz switching without excessive gate drive loss.
R_thJC	0.9 K/W - Confirmed junction-to-case thermal resistance allows 100 A continuous operation with ≤45 °C case temperature rise.
I_D, cont @ T_C = 25 °C	100 A - Verified continuous drain current rating under ideal heatsink conditions per JEDEC JESD51-2.
Q_rr	42 nC - Measured reverse recovery charge supports ZVS/ZCS soft-switching topologies with minimal EMI impact.

Pinout & Package

Package: PG-TDSON-8 (3.3 mm × 3.3 mm × 0.9 mm), thermally enhanced with exposed drain pad (Pb-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source Sense)	Kelvin source connection	Provides isolated return path for current-sense amplifier, eliminating IR drop error from power source bond wires.
2–3, 5–6 (Source)	Main source terminals	Parallel low-inductance paths for high-current source return; designed for symmetric PCB layout routing.
4 (Gate)	Control input	Logic-compatible gate terminal requiring ≤10 V drive; internal ESD protection rated to ±2 kV HBM.
7–8 (Drain)	Main power output	Exposed copper pad connected internally to all drain regions; must be soldered to ≥4 cm² 2 oz Cu thermal plane.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 5.9 mΩ R_DS(on) at 10 V with 27 nC Q_g, reducing FOM (R_DS(on) × Q_g) to 159 mΩ·nC.
Kelvin source configuration	Separates sense and power source paths, enabling <±1% current measurement accuracy in digital VRMs.
100% UIS tested	Guarantees single-pulse avalanche energy handling up to 120 mJ at T_J = 150 °C, ensuring robustness during overload faults.
Enhanced dv/dt immunity	Rated for 50 V/ns transient immunity, preventing spurious turn-on in high-speed half-bridge configurations.

Applications

Server Voltage Regulator Module (VRM)

Telecom DC-DC Point-of-Load Converter

Use Scenario: High-density 48 V to 1 V/100 A VRM for AI accelerators and CPUs.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck topology operating at 1–2 MHz.

Use Value: 5.9 mΩ R_DS(on) and 27 nC Q_g reduce conduction + switching losses by 18% vs. prior-gen MOSFETs, enabling 95.2% peak efficiency.

Use Scenario: 12 V input, 3.3 V/40 A output converter in 5G baseband units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery (Q_rr = 42 nC).

Use Value: Reduced reverse recovery loss cuts diode conduction loss by 31%, lowering thermal stress on adjacent components.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: 24 V BLDC gate driver stage powering 500 W servo motors.

IC Role / Device Role / Timing Role: Low-side switch controlling PWM-driven motor phase current.

Use Value: 100% UIS rating ensures survival during inductive kickback events up to 120 mJ, eliminating need for external snubbers.

Use Scenario: 12 V to 5 V/15 A power supply for radar ECU with ASIL-B compliance.

IC Role / Device Role / Timing Role: Primary switching element in compact buck regulator with tight thermal envelope.

Use Value: R_thJC = 0.9 K/W enables full 15 A load within 75 °C ambient using only 2-layer PCB copper, avoiding heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 6.2 mΩ @ 10 V; Q_g = 32 nC; no Kelvin source; TO-263-7 package.	Larger footprint (10.0 × 15.0 mm); higher gate drive loss; unsuitable for ultra-high-accuracy current sensing.	Select when board space permits larger package and Kelvin sensing is not required.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 29 nC; Kelvin source; same PG-TDSON-8 footprint.	Higher R_thJC = 1.2 K/W; lower I_D rating (90 A); not 100% UIS tested.	Prefer for cost-sensitive designs where 100 A rating and avalanche ruggedness are non-critical.

Compared with STL220N3LLH6 and NTMFS5C673NL, BSC059N03S G uniquely combines sub-6 mΩ R_DS(on), 27 nC Q_g, Kelvin source, and 100% UIS qualification in the smallest 3.3 × 3.3 mm footprint-making it optimal for space-constrained, high-reliability VRMs and PoL converters.

Availability

BSC059N03S G is available at Aetrix Electronics and suitable for server VRMs, telecom point-of-load converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for BSC059N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™ 5 product line targets high-frequency, high-current power conversion applications-including data center VRMs, 5G infrastructure, and EV charging-where low R_DS(on)/Q_g FOM and thermal reliability are decisive.

FAQ

What is the maximum allowable gate-source voltage for BSC059N03S G?

The absolute maximum V_GS rating is ±20 V. Operation above +12 V provides no R_DS(on) improvement but increases gate oxide stress and leakage. For logic-level drive, 4.5–10 V is recommended; gate drivers must clamp negative excursions below −10 V to prevent parasitic turn-on during fast dv/dt transitions.

Does BSC059N03S G require a gate resistor for stability in high-frequency buck converters?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is required to dampen ringing caused by gate loop inductance and Miller capacitance. Without it, oscillations exceeding 100 MHz can cause localized heating and premature failure. The Kelvin source pin must be routed separately from main source traces to preserve damping effectiveness.

Can BSC059N03S G be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout: identical gate trace lengths, separate Kelvin sense routing per device, and shared thermal plane with uniform copper thickness. Parallel operation beyond two units requires active current balancing due to parametric spread in R_DS(on) (±20%) and threshold voltage (±0.3 V).

Is the exposed drain pad electrically isolated from other pins?

No-the exposed drain pad is internally connected to Pins 7 and 8 (drain terminals) and must be soldered to a PCB copper pour tied directly to the system ground or power rail. Any isolation attempt violates the thermal and electrical design intent and voids the R_thJC specification.

BSC059N03S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17.5A (Ta), 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 17.5W (Ta), 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC059N03S G FAQ

1.How can I place an order for BSC059N03S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC059N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC059N03S G reliable?

The price and inventory of BSC059N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC059N03S G is usually 5 days.

3.What payment methods are accepted for BSC059N03S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC059N03S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC059N03S G?

BSC059N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC059N03S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC059N03S G?

For technical support, including BSC059N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC059N03S G requirements.

6.How does Aetrix verify that BSC059N03S G is sourced from the original manufacturer or authorized distributors?

All BSC059N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC059N03S G meets industry standards.

7.What is the process for return or replacement of BSC059N03S G?

All BSC059N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC059N03S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC059N03S G part is unused and in its original packaging.

Return procedure for BSC059N03S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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