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Infineon Technologies BSC059N03ST

Part No.:
BSC059N03ST
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC059N03ST.pdf
Description:
MOSFET N-CH 30V 19A/89A TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,802

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Product details

Overview

BSC059N03ST from Infineon Technologies is an N-channel TrenchMOS power MOSFET optimized for high-efficiency DC-DC conversion, with 30 V VDS, 19 A continuous and 89 A pulsed drain current, and 5.9 mΩ RDS(on) at VGS = 10 V. It is used in synchronous buck converters for server VRMs and POL modules.

For engineers reviewing the BSC059N03ST datasheet, BSC059N03ST pinout, BSC059N03ST application, or BSC059N03ST equivalent, key selection criteria include low RDS(on) at 10 V drive, thermally enhanced TDSON-8 package, peak current capability, and gate charge (Qg = 24 nC) for high-frequency switching efficiency.

Technical Context

This MOSFET employs Infineon's TrenchStop technology to achieve low conduction losses and fast switching transitions. Its threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, enabling compatibility with 3.3 V and 5 V gate drivers.

The device features a fully rated avalanche energy rating (EAS = 75 mJ), integrated body diode with soft recovery characteristics, and guaranteed 100% UIS testing - critical for hard-switched and synchronous rectifier topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum blocking voltage for 24 V input rails and transient margin
RDS(on) @ VGS = 10 V5.9 mΩ - enables <1 W conduction loss at 19 A DC output current
ID (continuous)19 A - rated for sustained operation at TC = 70 °C in PCB-mounted TDSON-8
ID (pulsed)89 A - supports short-duration load transients in CPU/GPU VRMs
Qg24 nC - determines gate driver power requirement and switching speed at 500 kHz–1 MHz
EAS75 mJ - ensures robustness against inductive switching stress without external snubbers

Pinout & Package

Package: TDSON-8 (Thermally Enhanced Dual-Side Cooling Small Outline No-Lead), 3.3 mm × 3.3 mm footprint, exposed drain pad on bottom side for low thermal resistance (RthJC = 1.4 K/W).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 6, 7, 8Drain (D)Internally connected to exposed thermal pad - must be soldered to large copper pour for heatsinking
5Source (S)Reference node for gate drive; connects to power ground plane in synchronous buck low-side layout

Key Features

FeatureDesign Value
Ultra-low RDS(on)5.9 mΩ at 10 V enables >95% efficiency in 12 V → 1 V POL converters at 20 A
Optimized gate chargeQg = 24 nC minimizes driver losses and allows clean 1 MHz switching with standard gate drivers
100% UIS testedGuaranteed avalanche ruggedness eliminates need for derating in unclamped inductive circuits
Thermally enhanced TDSON-8Bottom-exposed drain pad reduces junction-to-board thermal resistance by 40% vs. standard SO-8

Applications

Server VRMGPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs in rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in 300–600 kHz phase-legs.

Use Value: 5.9 mΩ RDS(on) and 89 A pulse rating reduce conduction loss and support dynamic current steps up to 120 A.

Use Scenario: Point-of-load regulator delivering 0.8–1.2 V at up to 80 A to discrete GPUs in AI training systems.

IC Role / Device Role / Timing Role: High-current low-side switch in interleaved 2-phase buck stages.

Use Value: TDSON-8 thermal performance maintains Tj < 110 °C under 70 A DC load with 2-layer board cooling.

Industrial PLC I/O ModuleTelecom Baseband Power

Use Scenario: 24 V input DC-DC stage powering isolated analog front-ends and digital logic in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary low-side switch in compact 500 kHz buck converter.

Use Value: 1.0–2.5 V VGS(th) ensures reliable turn-on with 3.3 V microcontroller GPIOs and avoids shoot-through risk.

Use Scenario: Intermediate bus converter (48 V → 12 V) feeding FPGA and RF IC power domains in 5G baseband units.

IC Role / Device Role / Timing Role: High-efficiency low-side MOSFET in 1 MHz synchronous buck regulator.

Use Value: 24 nC Qg enables minimal gate drive loss and stable operation with TI UCC27531 driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NTMFS5C673NLRDS(on) = 6.7 mΩ @ 10 V; Qg = 22 nC; same TDSON-8 packageSlightly higher conduction loss but lower gate charge improves light-load efficiencyPrefer when optimizing for 10–30% load efficiency over full-load loss
Vishay SiR626DPRDS(on) = 5.3 mΩ @ 10 V; Qg = 30 nC; same footprint but higher gate drive demandLower RDS(on) reduces full-load loss but requires stronger gate driverChoose when thermal headroom is constrained and gate driver can supply ≥2 A peak

Compared with NTMFS5C673NL and SiR626DP, BSC059N03ST delivers the best balance of low RDS(on), moderate Qg, and proven avalanche ruggedness - making it optimal for high-reliability, high-current server and telecom POL designs where both efficiency and robustness are critical.

Availability

BSC059N03ST is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for BSC059N03ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BSC059N03ST belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-frequency DC-DC conversion in data center and communications infrastructure.

FAQ

What is the maximum junction temperature for continuous operation?

The BSC059N03ST has a rated maximum junction temperature (Tj) of 150 °C. Under typical PCB mounting with 2 oz copper and 2 thermal vias per mm² under the exposed drain pad, it sustains 19 A continuous current at TC = 70 °C. Derating is required above that case temperature per the datasheet's thermal curves.

Is this MOSFET suitable for use as a high-side switch?

No - BSC059N03ST is not designed for high-side configuration due to lack of integrated level-shifting capability and its gate threshold range (1.0–2.5 V). It requires a referenced source node and is optimized as a low-side or synchronous rectifier switch in buck, boost, and multiphase topologies.

Does it require a gate resistor for EMI control?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing and limit dV/dt-induced shoot-through in paralleled or high-speed switching configurations. The 24 nC Qg and low output capacitance (Coss = 1,100 pF) make it responsive to small-value resistors without compromising switching speed.

Can it replace older OptiMOS 20 V devices in existing designs?

No - while electrically compatible in many 24 V systems, the 30 V rating provides only 6 V overhead versus 20 V parts' 4 V margin. Layout, thermal design, and gate drive timing must be revalidated; the higher VDS also increases Coss slightly, affecting light-load efficiency and ZVS behavior.

BSC059N03ST Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2670 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-1

BSC059N03ST FAQ

1.How can I place an order for BSC059N03ST through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC059N03ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC059N03ST reliable?

The price and inventory of BSC059N03ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC059N03ST is usually 5 days.

3.What payment methods are accepted for BSC059N03ST?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC059N03ST transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC059N03ST?

BSC059N03ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC059N03ST order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC059N03ST?

For technical support, including BSC059N03ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC059N03ST requirements.

6.How does Aetrix verify that BSC059N03ST is sourced from the original manufacturer or authorized distributors?

All BSC059N03ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC059N03ST meets industry standards.

7.What is the process for return or replacement of BSC059N03ST?

All BSC059N03ST units undergo pre-shipment inspection (PSI). If there is an issue with BSC059N03ST, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC059N03ST part is unused and in its original packaging.

Return procedure for BSC059N03ST:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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