Infineon Technologies BSC059N03ST
- Part No.:
- BSC059N03ST
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC059N03ST.pdf
- Description:
- MOSFET N-CH 30V 19A/89A TDSON
- Quantity:
- Payment:

- Shipping:

Inventory:7,802
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSC059N03ST from Infineon Technologies is an N-channel TrenchMOS power MOSFET optimized for high-efficiency DC-DC conversion, with 30 V VDS, 19 A continuous and 89 A pulsed drain current, and 5.9 mΩ RDS(on) at VGS = 10 V. It is used in synchronous buck converters for server VRMs and POL modules.
For engineers reviewing the BSC059N03ST datasheet, BSC059N03ST pinout, BSC059N03ST application, or BSC059N03ST equivalent, key selection criteria include low RDS(on) at 10 V drive, thermally enhanced TDSON-8 package, peak current capability, and gate charge (Qg = 24 nC) for high-frequency switching efficiency.
Technical Context
This MOSFET employs Infineon's TrenchStop technology to achieve low conduction losses and fast switching transitions. Its threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, enabling compatibility with 3.3 V and 5 V gate drivers.
The device features a fully rated avalanche energy rating (EAS = 75 mJ), integrated body diode with soft recovery characteristics, and guaranteed 100% UIS testing - critical for hard-switched and synchronous rectifier topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage for 24 V input rails and transient margin |
| RDS(on) @ VGS = 10 V | 5.9 mΩ - enables <1 W conduction loss at 19 A DC output current |
| ID (continuous) | 19 A - rated for sustained operation at TC = 70 °C in PCB-mounted TDSON-8 |
| ID (pulsed) | 89 A - supports short-duration load transients in CPU/GPU VRMs |
| Qg | 24 nC - determines gate driver power requirement and switching speed at 500 kHz–1 MHz |
| EAS | 75 mJ - ensures robustness against inductive switching stress without external snubbers |
Pinout & Package
Package: TDSON-8 (Thermally Enhanced Dual-Side Cooling Small Outline No-Lead), 3.3 mm × 3.3 mm footprint, exposed drain pad on bottom side for low thermal resistance (RthJC = 1.4 K/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Internally connected to exposed thermal pad - must be soldered to large copper pour for heatsinking |
| 5 | Source (S) | Reference node for gate drive; connects to power ground plane in synchronous buck low-side layout |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 5.9 mΩ at 10 V enables >95% efficiency in 12 V → 1 V POL converters at 20 A |
| Optimized gate charge | Qg = 24 nC minimizes driver losses and allows clean 1 MHz switching with standard gate drivers |
| 100% UIS tested | Guaranteed avalanche ruggedness eliminates need for derating in unclamped inductive circuits |
| Thermally enhanced TDSON-8 | Bottom-exposed drain pad reduces junction-to-board thermal resistance by 40% vs. standard SO-8 |
Applications
| Server VRM | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs in rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in 300–600 kHz phase-legs. Use Value: 5.9 mΩ RDS(on) and 89 A pulse rating reduce conduction loss and support dynamic current steps up to 120 A. | Use Scenario: Point-of-load regulator delivering 0.8–1.2 V at up to 80 A to discrete GPUs in AI training systems. IC Role / Device Role / Timing Role: High-current low-side switch in interleaved 2-phase buck stages. Use Value: TDSON-8 thermal performance maintains Tj < 110 °C under 70 A DC load with 2-layer board cooling. |
| Industrial PLC I/O Module | Telecom Baseband Power |
Use Scenario: 24 V input DC-DC stage powering isolated analog front-ends and digital logic in programmable logic controllers. IC Role / Device Role / Timing Role: Primary low-side switch in compact 500 kHz buck converter. Use Value: 1.0–2.5 V VGS(th) ensures reliable turn-on with 3.3 V microcontroller GPIOs and avoids shoot-through risk. | Use Scenario: Intermediate bus converter (48 V → 12 V) feeding FPGA and RF IC power domains in 5G baseband units. IC Role / Device Role / Timing Role: High-efficiency low-side MOSFET in 1 MHz synchronous buck regulator. Use Value: 24 nC Qg enables minimal gate drive loss and stable operation with TI UCC27531 driver. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NTMFS5C673NL | RDS(on) = 6.7 mΩ @ 10 V; Qg = 22 nC; same TDSON-8 package | Slightly higher conduction loss but lower gate charge improves light-load efficiency | Prefer when optimizing for 10–30% load efficiency over full-load loss |
| Vishay SiR626DP | RDS(on) = 5.3 mΩ @ 10 V; Qg = 30 nC; same footprint but higher gate drive demand | Lower RDS(on) reduces full-load loss but requires stronger gate driver | Choose when thermal headroom is constrained and gate driver can supply ≥2 A peak |
Compared with NTMFS5C673NL and SiR626DP, BSC059N03ST delivers the best balance of low RDS(on), moderate Qg, and proven avalanche ruggedness - making it optimal for high-reliability, high-current server and telecom POL designs where both efficiency and robustness are critical.
Availability
BSC059N03ST is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.
Supply support for BSC059N03ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
BSC059N03ST belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, high-frequency DC-DC conversion in data center and communications infrastructure.
FAQ
What is the maximum junction temperature for continuous operation?
The BSC059N03ST has a rated maximum junction temperature (Tj) of 150 °C. Under typical PCB mounting with 2 oz copper and 2 thermal vias per mm² under the exposed drain pad, it sustains 19 A continuous current at TC = 70 °C. Derating is required above that case temperature per the datasheet's thermal curves.
Is this MOSFET suitable for use as a high-side switch?
No - BSC059N03ST is not designed for high-side configuration due to lack of integrated level-shifting capability and its gate threshold range (1.0–2.5 V). It requires a referenced source node and is optimized as a low-side or synchronous rectifier switch in buck, boost, and multiphase topologies.
Does it require a gate resistor for EMI control?
A gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing and limit dV/dt-induced shoot-through in paralleled or high-speed switching configurations. The 24 nC Qg and low output capacitance (Coss = 1,100 pF) make it responsive to small-value resistors without compromising switching speed.
Can it replace older OptiMOS 20 V devices in existing designs?
No - while electrically compatible in many 24 V systems, the 30 V rating provides only 6 V overhead versus 20 V parts' 4 V margin. Layout, thermal design, and gate drive timing must be revalidated; the higher VDS also increases Coss slightly, affecting light-load efficiency and ZVS behavior.
BSC059N03ST Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2670 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-1
BSC059N03ST FAQ
1.How can I place an order for BSC059N03ST through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC059N03ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC059N03ST reliable?
The price and inventory of BSC059N03ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC059N03ST is usually 5 days.
3.What payment methods are accepted for BSC059N03ST?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC059N03ST transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC059N03ST?
BSC059N03ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC059N03ST order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC059N03ST?
For technical support, including BSC059N03ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC059N03ST requirements.
6.How does Aetrix verify that BSC059N03ST is sourced from the original manufacturer or authorized distributors?
All BSC059N03ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC059N03ST meets industry standards.
7.What is the process for return or replacement of BSC059N03ST?
All BSC059N03ST units undergo pre-shipment inspection (PSI). If there is an issue with BSC059N03ST, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC059N03ST part is unused and in its original packaging.
Return procedure for BSC059N03ST:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSC059N03ST Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

