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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0703LSATMA1

Name: BSC0703LSATMA1
Brand: Infineon Technologies
SKU: BSC0703LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0703LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0703LSATMA1.pdf

Description:: MOSFET N-CH 60V 15A/64A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:6,707

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Product details

Overview

BSC0703LSATMA1 from Infineon Technologies is an N-channel logic-level Power MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 60 V V_DS, 6.5 mΩ R_DS(on) at V_GS = 10 V, 64 A continuous drain current, and optimized for high-frequency synchronous rectification in AC/DC adapters and USB PD chargers.

For engineers reviewing the BSC0703LSATMA1 datasheet, BSC0703LSATMA1 pinout, BSC0703LSATMA1 application, or BSC0703LSATMA1 equivalent, key selection criteria include low Q_G (10 nC), low Q_OSS (19 nC), 100% avalanche tested ruggedness, and thermal resistance R_thJC of 1.6 K/W for high-power-density board layouts.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with minimal gate charge. Its logic-level gate threshold (V_GS(th) = 1.1–2.3 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The integrated body diode features low reverse recovery charge (Q_rr = 14–28 nC) and fast t_rr (24–48 ns), supporting ZVS operation in resonant topologies. Thermal design is enabled by bottom-side cooling via exposed drain pad and validated JEDEC qualification per AEC-Q101 stress test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage suitable for 48 V input systems and 24 V industrial rails
R_DS(on), max	6.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 40 A, critical for thermally constrained chargers
I_D, cont	64 A @ T_C = 25 °C - Supports high-current secondary-side synchronous rectification in multi-port USB PD designs
Q_G	10 nC @ 0–4.5 V - Low gate charge reduces driver power and enables >1 MHz switching in GaN-assisted converters
Q_OSS	19 nC - Minimizes turn-off energy loss and improves light-load efficiency in adaptive PFM modes
R_thJC	1.6 K/W - Enables direct PCB copper thermal coupling for compact heatsinking without external thermal vias
E_AS	21 mJ - Confirmed single-pulse avalanche capability supports robust overvoltage protection in offline SMPS

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), 5.15 mm × 6.2 mm × 1.27 mm, with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally connected to exposed pad; primary current path and thermal conduction path to PCB
6	Gate (G)	Control terminal; low input capacitance (C_iss = 1400–1800 pF) minimizes Miller effect at high dV/dt
S (pin 1–3 labeled as S in diagram but physically tied to Drain)	Source (S)	Not separately bonded; source is internal node connected to pins 1–3 and 5–8 via drain; gate-source reference is defined across G–D

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.1–2.3 V enables direct interface with 3.3 V microcontrollers and PWM ICs without gate drivers
100% avalanche tested	Each unit validated to 21 mJ single-pulse E_AS, ensuring reliability under transient overvoltage events
Optimized for chargers	Low Q_g/Q_oss ratio (0.53) and fast t_r/t_f (3/3 ns) reduce switching losses in 200–600 kHz QR flyback and active clamp forward designs
Pb-free & halogen-free	RoHS-compliant lead plating and IEC61249-2-21 compliant materials support eco-design requirements for global consumer electronics

Applications

USB PD Charger Secondary Side

Server VRM High-Side Switch

Use Scenario: 65 W dual-port USB PD adapter with synchronous rectification in secondary-side LLC resonant converter.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode; driven by dedicated SR controller with adaptive timing.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >94% peak efficiency and 15 °C lower secondary-side temperature rise.

Use Scenario: 12 V input, 0.8 V/120 A output server VRM using multiphase buck topology with discrete high-side switches.

IC Role / Device Role / Timing Role: High-side power switch in 3-phase interleaved buck stage; operated with 500 ns dead-time control.

Use Value: Low R_DS(on) and Q_g enable 92% efficiency at full load while maintaining <100 ns propagation delay matching for phase current balance.

Industrial 24 V DC-DC Converter

Automotive Body Control Module

Use Scenario: 24 V input, 5 V/10 A isolated flyback for PLC I/O module power supply with reinforced isolation.

IC Role / Device Role / Timing Role: Primary-side active clamp switch managing leakage energy recovery during reset phase.

Use Value: Avalanche-rated ruggedness ensures survival during 100 V transients on 24 V rail; low C_oss minimizes clamp capacitor size and loss.

Use Scenario: 12 V battery-powered LED headlight driver with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: High-side load switch controlling LED string current; driven by automotive MCU GPIO.

Use Value: Logic-level gate allows direct 5 V MCU drive; integrated avalanche capability eliminates need for external TVS in load-dump scenarios.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 5.2 mΩ @ 10 V, Q_G = 14.5 nC, larger DFN8 5×6 package	Higher conduction loss margin but higher gate drive power; requires larger PCB area	Select when lowest R_DS(on) dominates over switching frequency and layout space constraints
ON Semiconductor NTMFS5C673NL	R_DS(on) = 6.7 mΩ @ 10 V, Q_G = 9.5 nC, same SuperSO8 footprint	Nearly identical dynamic performance; slightly higher R_DS(on) but tighter parametric distribution	Select when supply chain diversification is required and ±0.2 mΩ R_DS(on) tolerance is acceptable

Compared with STL220N6F7 and NTMFS5C673NL, BSC0703LSATMA1 offers the best Q_G/R_DS(on) ratio (1.54 nC/mΩ) for high-frequency charger designs where gate drive loss and thermal density are co-constrained.

Availability

BSC0703LSATMA1 is available at Aetrix Electronics and suitable for USB PD chargers, server VRMs, industrial 24 V DC-DC converters, and automotive body control modules requiring stable component supply and qualified automotive-grade reliability.

Supply support for BSC0703LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in consumer and industrial power supplies.

FAQ

What is the maximum junction temperature rating for BSC0703LSATMA1?

The absolute maximum junction temperature is 150 °C, with storage temperature ranging from –55 °C to +150 °C per IEC climatic category 55/150/56. Derating curves in the datasheet show continuous drain current drops to 41 A at T_C = 100 °C, confirming safe operation up to rated T_j under proper PCB thermal design.

Does BSC0703LSATMA1 support gate driving from a 3.3 V microcontroller?

Yes - its gate threshold voltage range is 1.1–2.3 V, and R_DS(on) remains ≤9.2 mΩ at V_GS = 4.5 V. At 3.3 V, typical R_DS(on) is ~12 mΩ, sufficient for moderate-current applications like LED switching or low-duty-cycle loads where thermal margin exists.

How is the SuperSO8 package thermally optimized for high-power operation?

The PG-TDSON-8 package features an exposed drain pad soldered directly to a large PCB copper area (6 cm² recommended). This achieves R_thJC = 1.6 K/W and R_thJA = 50 K/W, allowing >46 W power dissipation at T_C = 25 °C - significantly higher than standard SO-8 packages due to vertical heat extraction through the bottom side.

Is BSC0703LSATMA1 qualified for automotive applications?

No - it is qualified per JEDEC standards for industrial use, not AEC-Q101. While it shares process and testing rigor with automotive-grade OptiMOS™ parts, this specific variant lacks the extended temperature screening, failure analysis reporting, and PPAP documentation required for automotive body electronics or infotainment systems.

BSC0703LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC0703LSATMA1 FAQ

1.How can I place an order for BSC0703LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0703LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0703LSATMA1 reliable?

The price and inventory of BSC0703LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0703LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0703LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0703LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0703LSATMA1?

BSC0703LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0703LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0703LSATMA1?

For technical support, including BSC0703LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0703LSATMA1 requirements.

6.How does Aetrix verify that BSC0703LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0703LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0703LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0703LSATMA1?

All BSC0703LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0703LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0703LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0703LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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