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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0704LSATMA1

Name: BSC0704LSATMA1
Brand: Infineon Technologies
SKU: BSC0704LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0704LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0704LSATMA1.pdf

Description:: MOSFET N-CH 60V 11A/47A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC0704LSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency switching in DC-DC converters and USB-C PD chargers, featuring 60 V V_DS, 9.4 mΩ R_DS(on) at V_GS = 10 V, 47 A continuous drain current, and 13 nC Q_OSS. It is housed in a SuperSO8 (PG-TDSON-8) package with bottom-side thermal pad for enhanced power dissipation.

For engineers reviewing the BSC0704LSATMA1 datasheet, BSC0704LSATMA1 pinout, BSC0704LSATMA1 application, or BSC0704LSATMA1 equivalent, key selection criteria include its low gate charge (7 nC to 4.5 V), avalanche-rated ruggedness (13 mJ E_AS), and logic-level drive compatibility down to 4.5 V - critical for synchronous rectification and compact adapter designs.

Technical Context

This OptiMOS™ device employs trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (FoM), enabling high-efficiency operation in 300–1000 kHz switching topologies. Its 100% avalanche-tested construction ensures robustness under transient overvoltage conditions common in flyback and LLC resonant converters.

The MOSFET supports both primary-side switching and secondary-side synchronous rectification roles. Its low reverse recovery charge (Q_rr = 6–12 nC) and fast trr (18–36 ns) reduce body diode conduction losses during dead-time, while the integrated Schottky-like reverse diode delivers V_SD = 0.9–1.2 V at 24 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage suitable for 48 V input systems and 24 V bus applications without derating.
R_DS(on), max	9.4 mΩ at V_GS = 10 V - Enables <1.1 W conduction loss at 35 A, supporting high-current USB-C PD 100 W designs.
Q_G(0–4.5 V)	7 nC - Low gate drive energy reduces controller IC loading and enables use with low-power gate drivers in portable adapters.
E_AS	13 mJ - Confirmed single-pulse avalanche capability allows safe operation during inductive turn-off transients in non-clamped topologies.
R_thJC	2.1 K/W - Junction-to-case thermal resistance enables >30 W power dissipation with minimal heatsink when mounted on PCB copper area.
Q_OSS	13 nC - Output charge directly impacts hard-switching turn-off loss; value supports efficient operation up to 500 kHz in buck converters.
V_GS(th)	1.1–2.3 V - Logic-level threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs in load switch applications.

Pinout & Package

Package: SuperSO8 (PG-TDSON-8), 5 mm × 6 mm footprint with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source	Common source node; pins 1–3 and pin S (pin 8) are internally bonded to same terminal for low-inductance parallel routing.
4, G	Gate	Control input; requires <7 nC charge to drive from 0 to 4.5 V - compatible with standard logic-level drivers.
5, 6, 7, D	Drain	High-side or low-side power path; pins 5–7 and pin D (pin 4 in marking diagram, but physically pin 5–7 per layout) connect to internal drain metallization and exposed pad.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for level-shifting circuitry in 3.3 V/5 V control domains.
Optimized R_DS(on) × Q_G FoM	~66 mΩ·nC - balances conduction and switching losses for peak efficiency in 300–600 kHz SMPS stages.
100% avalanche tested	Each unit validated to withstand 13 mJ single-pulse avalanche energy - ensures reliability in unclamped inductive switching.
SuperSO8 thermal performance	R_thJA = 50 K/W on 6 cm² PCB copper - enables >2.1 W continuous dissipation without external heatsink in space-constrained adapters.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020 - supports compliance-critical industrial and consumer end-equipment certifications.

Applications

USB-C Power Delivery Adapter

Server VRM High-Side Switch

Use Scenario: Primary-side switch in 100 W GaN-assisted flyback converter with 20 V–24 V output.

IC Role / Device Role: High-frequency (500 kHz) hard-switched power FET handling 35 A peak drain current.

Use Value: 9.4 mΩ R_DS(on) and 7 nC Q_G minimize combined conduction and gate drive losses, improving adapter efficiency to >94% at full load.

Use Scenario: High-side FET in multiphase 48 V–12 V server buck converter delivering up to 120 A per phase.

IC Role / Device Role: Synchronous rectifier with fast body diode (trr = 18–36 ns) and low Q_rr for reduced dead-time loss.

Use Value: 0.9–1.2 V V_SD and 6–12 nC Q_rr cut reverse conduction loss by ~35% versus standard MOSFETs in 1 MHz operation.

Industrial 24 V DC-DC Converter

Automotive Body Control Module Load Switch

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary supply using active clamp forward topology.

IC Role / Device Role: Clamp switch managing reset energy with repeated 60 V V_DS stress and 30 A pulses.

Use Value: 13 mJ E_AS rating and 150 °C T_jmax ensure reliable clamp operation across -40 °C to +125 °C ambient.

Use Scenario: 12 V battery-fed load switch controlling HVAC actuators and LED lighting in BCM.

IC Role / Device Role: Logic-level controlled power switch activated directly by MCU GPIO without driver stage.

Use Value: 1.1–2.3 V V_GS(th) guarantees turn-on at 3.3 V logic, while 47 A ID rating supports 20 A continuous loads with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 10.5 mΩ @ 10 V; Q_G = 10.5 nC; PG-TDSON-8 package; no avalanche rating specified.	Lacks production-level avalanche testing - unsuitable for unclamped inductive switching like active clamp circuits.	Preferable only where gate drive strength exceeds 7 nC budget and avalanche immunity is not required.
DMTH6005LPSQ	R_DS(on) = 5.8 mΩ @ 10 V; Q_G = 12.5 nC; SO-8 package; AEC-Q101 qualified; 60 V rating.	AEC-Q101 automotive qualification adds cost and test overhead; higher Q_G increases driver loss in high-frequency designs.	Select only for automotive-grade programs requiring qualification; otherwise, BSC0704LSATMA1 offers better FoM for commercial power supplies.

Compared with STL220N6F7 and DMTH6005LPSQ, BSC0704LSATMA1 delivers superior switching efficiency (lower Q_G/R_DS(on) ratio) and guaranteed avalanche ruggedness - making it optimal for high-density, high-reliability USB-C PD and industrial DC-DC converters where gate drive simplicity and transient robustness are prioritized.

Availability

BSC0704LSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, server VRM modules, and industrial 24 V DC-DC converters requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for BSC0704LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

BSC0704LSATMA1 belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-frequency power conversion in compact AC-DC adapters, telecom power supplies, and industrial SMPS - emphasizing low R_DS(on) × Q_G and robust thermal design.

FAQ

Is BSC0704LSATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes. Its low Q_rr (6–12 nC), fast trr (18–36 ns), and low V_SD (0.9–1.2 V) enable efficient synchronous rectification in LLC topologies operating up to 1 MHz. The device's 60 V rating supports secondary-side operation in 24 V and 48 V output designs without voltage margin concerns.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 30 A, as specified in Table 2 of the datasheet under "V_GS = 10 V, T_C = 100 °C". This reflects thermal derating due to junction-to-case thermal resistance and power dissipation limits.

Does BSC0704LSATMA1 require a gate resistor for EMI control in 500 kHz switching?

A gate resistor of 1.6 Ω is used in the datasheet's dynamic characterization (Table 5), confirming suitability for 500 kHz operation. Adding 1–5 Ω external resistance suppresses ringing and controls dV/dt without compromising switching speed - typical practice in high-frequency adapter designs.

Can this MOSFET be used in linear regulator mode for hot-swap applications?

No. While rated for 150 °C T_j, BSC0704LSATMA1 is optimized for switching operation. Its Safe Operating Area (SOA) diagram (Diagram 3) shows limited DC capability - maximum linear-mode current drops sharply above 10 V V_DS, making it unsuitable for sustained linear regulation or hot-swap FET applications.

BSC0704LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 14µA

Gate Charge (Qg) (Max) @ Vgs:: 9.4 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC0704LSATMA1 FAQ

1.How can I place an order for BSC0704LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0704LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0704LSATMA1 reliable?

The price and inventory of BSC0704LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0704LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0704LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0704LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0704LSATMA1?

BSC0704LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0704LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0704LSATMA1?

For technical support, including BSC0704LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0704LSATMA1 requirements.

6.How does Aetrix verify that BSC0704LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0704LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0704LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0704LSATMA1?

All BSC0704LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0704LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0704LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0704LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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