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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC072N025S G

Name: BSC072N025S G
Brand: Infineon Technologies
SKU: BSC072N025S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC072N025S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC072N025S G.pdf

Description:: MOSFET N-CH 25V 15A/40A TDSON

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Product details

Overview

BSC072N025S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency DC/DC converters in notebook power supplies, featuring 25 V V_DS, 7.2 mΩ R_DS(on) at V_GS = 10 V and 40 A continuous drain current at T_C = 100 °C. It delivers low gate charge × R_DS(on) figure-of-merit (FOM), avalanche rating, and JEDEC JESD22 qualification for reliability-critical SMPS applications.

For engineers reviewing the BSC072N025S G datasheet, BSC072N025S G pinout, BSC072N025S G application, or BSC072N025S G equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 6.0–7.2 mΩ on-resistance at 10 V drive, 13–18 nC total gate charge, and PG-TDSON-8 package compatibility with high-density PCB layouts in synchronous buck topologies.

Technical Context

This OptiMOS™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance: t_r = 4.8–7.2 ns, t_f = 3.8–5.7 ns, and C_iss = 1680–2230 pF at V_DS = 15 V. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The MOSFET supports synchronous rectification with Q_g(sync) = 12–16 nC under 0–5 V gate swing and exhibits robust dv/dt immunity (6 kV/µs) and unclamped inductive switching capability (E_AS = 160 mJ at I_D = 40 A), making it suitable for hard-switched and resonant converter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) max	7.2 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 40 A
I_D continuous	40 A at T_C = 100 °C - Sustains full load in thermally constrained notebook VRMs
Q_g total	13–18 nC - Low gate drive power requirement for 500 kHz–1 MHz operation
R_thJC	2.1 K/W (bottom side) - Enables efficient heat transfer to heatsink or copper plane
E_AS	160 mJ - Withstands single-pulse inductive energy in synchronous buck freewheeling
dv/dt rating	6 kV/µs - Resists false turn-on in high di/dt node environments

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), RoHS-compliant, halogen-free per IEC61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All pins 1–8 are internally connected to the exposed drain pad - provides low-inductance, high-current path and thermal conduction to PCB
G (Gate)	Control terminal	Pin 1 of standard TDSON-8 layout (per Infineon outline P-TDSON-8 Rev. 1.4) - requires <20 V drive, compatible with 3.3 V logic
S (Source)	Reference node for gate drive and current sensing	Pin 8 - forms Kelvin source connection when used with dedicated sense FET layout; defines local ground reference for driver IC

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V - eliminates need for gate driver boost stage in 3.3 V/5 V controller designs
Low R_DS(on) × Q_g FOM	~50 Ω·nC - balances conduction and switching losses for >95% efficiency in 500 kHz buck converters
Avalanche-rated	E_AS = 160 mJ - ensures ruggedness during transient overloads without external snubbers
Superior thermal resistance	R_thJC = 2.1 K/W - allows >40 W power dissipation with minimal case temperature rise under forced cooling
Reverse diode performance	V_SD = 0.93–1.1 V at 40 A - reduces body-diode conduction loss during dead-time in synchronous rectification

Applications

High-Efficiency Notebook VRM

Synchronous Buck Converter

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in ultrathin notebooks with strict thermal envelope.

IC Role / Device Role / Timing Role: High-side synchronous FET in 2-phase interleaved buck converter operating at 1 MHz.

Use Value: 7.2 mΩ R_DS(on) and 13–18 nC Q_g enable >94% efficiency at 25 A load while limiting junction temperature rise to <40 K above ambient.

Use Scenario: Main power switch in industrial 24 V input DC/DC module delivering 5 V/30 A output.

IC Role / Device Role / Timing Role: Primary switching element in hard-switched buck topology with integrated controller.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during fast voltage transitions; avalanche rating eliminates need for external clamping diodes.

USB-C PD Power Delivery

Server VR13 Voltage Regulator

Use Scenario: Secondary-side synchronous rectifier in 100 W USB-C PD adapter with GaN primary.

IC Role / Device Role / Timing Role: Low-side FET in active clamp forward or LLC secondary synchronous rectification stage.

Use Value: Q_g(sync) = 12–16 nC at 0–5 V gate swing minimizes drive loss; 0.93 V V_SD reduces reverse conduction loss during dead time.

Use Scenario: High-current phase FET in multi-phase server VRM supporting DDR5 memory power rails.

IC Role / Device Role / Timing Role: 40 A-rated power stage FET in 3+1 phase configuration with digital PWM controller.

Use Value: JEDEC JESD22 qualification and 150 °C T_j,max ensure long-term reliability under sustained 100% load at elevated ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 6.3 mΩ @ 4.5 V, Q_g = 15.5 nC, SO-8 package	Higher R_DS(on) at 10 V (6.3 vs. 7.2 mΩ), but lower gate drive voltage sensitivity	Preferred where 4.5 V gate drive dominates and thermal budget allows slightly higher conduction loss
SI7157DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 10 V, Q_g = 14.5 nC, PowerPAK® SO-8	Similar R_DS(on) and Q_g, but higher R_thJA (50 K/W vs. 45 K/W) and no avalanche rating	Acceptable for non-avalanche-critical consumer applications with adequate board-level thermal design

Compared with IRLHS6242PBF and SI7157DP-T1-GE3, BSC072N025S G offers superior avalanche ruggedness (160 mJ), lower R_thJC (2.1 K/W), and JEDEC qualification-making it preferred for mission-critical notebook and server VRMs where reliability and thermal headroom are prioritized over marginal R_DS(on) reduction.

Availability

BSC072N025S G is available at Aetrix Electronics and suitable for high-efficiency notebook VRMs, USB-C PD adapters, and server voltage regulators requiring stable component supply and long-lifecycle support.

Supply support for BSC072N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC072N025S G belongs to the OptiMOS™2 power transistor family, designed specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained portable and computing applications where low R_DS(on), fast switching, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for BSC072N025S G at 100 °C case temperature?

The maximum continuous drain current is 40 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (6 cm²) and vertical mounting in still air, with R_thJA = 45 K/W. Derating applies beyond this temperature per the I_D vs. T_C curve on page 4 of the datasheet.

Does BSC072N025S G support 3.3 V gate drive in practical applications?

Yes - its gate threshold voltage range is 1.2–2.0 V, and R_DS(on) is characterized down to V_GS = 4.5 V (8.7–10.9 mΩ). At 3.3 V, it achieves partial enhancement suitable for low-duty-cycle or low-current operation, but full 40 A conduction requires ≥4.5 V drive per datasheet test conditions.

How is the PG-TDSON-8 package thermally optimized compared to standard SO-8?

The PG-TDSON-8 features an exposed drain pad on the bottom surface, enabling direct thermal coupling to the PCB's inner copper layers or external heatsink. Its R_thJC is 2.1 K/W (bottom), versus ~5–6 K/W for standard SO-8, reducing junction-to-board thermal resistance by >70% and allowing higher power density in compact layouts.

Is BSC072N025S G suitable for synchronous rectification in LLC resonant converters?

Yes - its low Q_g(sync) (12–16 nC), fast t_f (3.8–5.7 ns), and low V_SD (0.93–1.1 V) make it well-suited for low-loss synchronous rectification in LLC secondaries. The 6 kV/µs dv/dt rating also prevents false triggering during high-slew-rate resonant node transitions.

BSC072N025S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.2mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2230 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC072N025S G FAQ

1.How can I place an order for BSC072N025S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC072N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC072N025S G reliable?

The price and inventory of BSC072N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC072N025S G is usually 5 days.

3.What payment methods are accepted for BSC072N025S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC072N025S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC072N025S G?

BSC072N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC072N025S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC072N025S G?

For technical support, including BSC072N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC072N025S G requirements.

6.How does Aetrix verify that BSC072N025S G is sourced from the original manufacturer or authorized distributors?

All BSC072N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC072N025S G meets industry standards.

7.What is the process for return or replacement of BSC072N025S G?

All BSC072N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC072N025S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC072N025S G part is unused and in its original packaging.

Return procedure for BSC072N025S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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