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Infineon Technologies BSC079N03LSCGATMA1

Part No.:
BSC079N03LSCGATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC079N03LSCGATMA1.pdf
Description:
MOSFET N-CH 30V 14A/50A TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,582

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Product details

Overview

BSC079N03LSCGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS. It delivers 7.9 mΩ RDS(on) at VGS = 10 V, 50 A continuous drain current at TC = 25 °C, and avalanche-rated ruggedness - enabling use in synchronous buck converters for server VRMs and telecom power supplies.

For engineers reviewing the BSC079N03LSCGATMA1 datasheet, BSC079N03LSCGATMA1 pinout, BSC079N03LSCGATMA1 application, or BSC079N03LSCGATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 6.8–9.1 nC total gate charge (Qg), 12.7 mΩ RDS(on) max at 4.5 V, 10.2 mΩ typical RDS(on) at 4.5 V/30 A, and 4.1 K/W junction-to-case thermal resistance.

Technical Context

This OptiMOS™3 MOSFET employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Qg × RDS(on) figure-of-merit (FOM) supports high-frequency operation up to 1 MHz in hard-switched topologies, while the integrated body diode exhibits 10 nC reverse recovery charge (Qrr) and 0.9 V forward voltage at 30 A/25 °C.

The device is qualified per JEDEC standards for industrial and telecom power applications, with guaranteed operation from –55 °C to +150 °C junction temperature. Its PG-TDSON-8 package features exposed drain pad for low thermal resistance and supports bottom-side cooling on PCBs with ≥6 cm² copper area.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage for 24 V input rail systems with margin
RDS(on) max @ 10 V7.9 mΩ - Enables <1.2 W conduction loss at 30 A in continuous mode
ID cont @ TC=25 °C50 A - Supports high-current output stages without external heatsink
Qg total6.8–9.1 nC - Reduces gate driver power demand and switching transition time
RthJC4.1 K/W - Allows direct thermal path from die to PCB copper, critical for VRM thermal design
Qrr10 nC - Limits reverse recovery loss and EMI in synchronous rectification
VGS(th)1–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers

Pinout & Package

PG-TDSON-8 is a surface-mount, thermally enhanced 8-pin package with exposed drain pad (pins 1–3 and 5–7 are source; pin 4 is gate; drain connected to underside pad). Pin 1 marked by notch or dot.

Pin/TerminalCircuit RoleDesign Meaning
1,2,3,5,6,7SourceCommon return path for load current; internally paralleled for low inductance and resistance
4GateControl terminal requiring <9.1 nC charge for full enhancement; sensitive to ESD
Drain (exposed pad)DrainMain high-side or low-side power path; primary thermal interface to PCB copper

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.5 V - compatible with 3.3 V microcontrollers and PWM ICs
Avalanche ratedSingle-pulse IAS = 35 A, EAS = 10 mJ - withstands inductive switching stress without external snubbers
Low Qg × RDS(on) FOM~68 mΩ·nC - balances switching speed and conduction loss for >500 kHz DC/DC designs
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS - suitable for green industrial and telecom equipment

Applications

Server Voltage Regulator Modules (VRMs)Telecom DC/DC Converters

Use Scenario: High-density 12 V → 0.8–1.8 V point-of-load conversion in dual-CPU servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 600 kHz.

Use Value: 7.9 mΩ RDS(on) and 9.1 nC Qg reduce both conduction loss and gate drive loss, improving VRM efficiency by ~1.2% at 100 A output.

Use Scenario: 48 V intermediate bus converter feeding 12 V distribution in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or LLC resonant topology.

Use Value: Avalanche rating and 150 °C Tj rating ensure reliability under transient overloads and high ambient temperatures.

Industrial Motor DrivesAutomotive ADAS Power Supplies

Use Scenario: 24 V H-bridge gate driver stage powering BLDC fans and pumps in PLC cabinets.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with fast 2.4 ns rise/fall times and low Crss (22 pF).

Use Value: Low reverse transfer capacitance minimizes Miller-induced shoot-through risk during high-dV/dt commutation.

Use Scenario: Compact 12 V → 3.3 V/5 V power supply for radar sensor ECUs in ADAS domain controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback, driven by transformer-coupled gate signal.

Use Value: 0.9 V VSD and 10 nC Qrr cut diode conduction loss and recovery loss, extending thermal headroom in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLHS6342TRPBFRDS(on) = 8.5 mΩ @ 4.5 V; Qg = 10.5 nC; SO-8 package (higher RthJA)Limited to ≤30 A continuous due to thermal constraints; not avalanche ratedPrefer for cost-sensitive, lower-current (<25 A), non-avalanche-critical designs
DMN3025LFG-7RDS(on) = 2.5 mΩ @ 4.5 V; Qg = 12.5 nC; 2×2 mm WDFN packageHigher current density but smaller thermal pad; requires tighter layout controlChoose when board space is constrained and thermal management uses advanced PCB stack-up

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC079N03LSCGATMA1 offers superior avalanche ruggedness and balanced FOM for mid-power industrial SMPS, while maintaining compatibility with standard PG-TDSON-8 footprint and thermal design practices.

Availability

BSC079N03LSCGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for BSC079N03LSCGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum safe operating temperature for BSC079N03LSCGATMA1?

The junction temperature must not exceed +150 °C under steady-state operation. The device is rated for storage and operation from –55 °C to +150 °C. Thermal design must account for RthJC = 4.1 K/W and PCB copper area - derating is required above TC = 100 °C, where ID drops to 25 A at VGS = 4.5 V.

Can BSC079N03LSCGATMA1 be used as a high-side switch with bootstrap gate drive?

Yes - its 20 V maximum gate-source voltage and logic-level threshold (1–2.2 V) make it compatible with standard bootstrap gate drivers. However, the 3.4 V gate plateau voltage requires sufficient bootstrap voltage margin (>8 V) to ensure full enhancement during high-duty-cycle operation.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

A gate resistor (typically 1.6 Ω, per datasheet test condition) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 22 pF) and PCB inductance. Omitting it may cause oscillation during turn-on/turn-off, especially at >300 kHz switching frequencies.

Is the body diode suitable for synchronous rectification in flyback converters?

Yes - the body diode has VSD = 0.9 V at 30 A and Qrr = 10 nC, making it viable for secondary-side synchronous rectification. However, for optimal efficiency, external gate timing control (e.g., using a dedicated SR controller) is required to avoid cross-conduction with the primary switch.

BSC079N03LSCGATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-1

BSC079N03LSCGATMA1 FAQ

1.How can I place an order for BSC079N03LSCGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC079N03LSCGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC079N03LSCGATMA1 reliable?

The price and inventory of BSC079N03LSCGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC079N03LSCGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC079N03LSCGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC079N03LSCGATMA1 transactions.

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4.How is shipping managed for BSC079N03LSCGATMA1?

BSC079N03LSCGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC079N03LSCGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC079N03LSCGATMA1?

For technical support, including BSC079N03LSCGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC079N03LSCGATMA1 requirements.

6.How does Aetrix verify that BSC079N03LSCGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC079N03LSCGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC079N03LSCGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC079N03LSCGATMA1?

All BSC079N03LSCGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC079N03LSCGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC079N03LSCGATMA1 part is unused and in its original packaging.

Return procedure for BSC079N03LSCGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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