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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC079N03SG

Name: BSC079N03SG
Brand: Infineon Technologies
SKU: BSC079N03SG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC079N03SG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC079N03SG.pdf

Description:: MOSFET N-CH 30V 14.6A/40A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC079N03SG from Infineon Technologies is an N-channel logic-level power MOSFET in a P-TDSON-8 package, rated for 30 V V_DS, 7.9 mΩ R_DS(on) at 10 V_GS, and 40 A continuous drain current at T_C = 100 °C. It features low gate charge (Q_g = 13–17 nC), fast switching (t_r = 4.2–6.3 ns), and avalanche rating for robustness in DC/DC converters.

For engineers reviewing the BSC079N03SG datasheet, BSC079N03SG pinout, BSC079N03SG application, or BSC079N03SG equivalent, this device is selected for high-efficiency notebook power stages where low conduction loss, thermal performance, and synchronous rectification capability are critical design requirements.

Technical Context

This OptiMOS®2 MOSFET uses trench-based silicon technology optimized for high-frequency SMPS operation. Its R_DS(on) × Q_g figure-of-merit (FOM) enables reduced switching and conduction losses simultaneously in buck converter high-side and synchronous rectifier roles.

The device supports logic-level drive (V_GS(th) = 1.2–2.0 V) and delivers stable performance across −55 °C to 150 °C junction temperature. Its low C_iss (1680–2230 pF) and C_rss (79–120 pF) minimize Miller-induced turn-off delay and improve gate drive efficiency in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input DC/DC stages
R_DS(on) max	7.9 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 40 A
Q_g	13–17 nC - Reduces gate drive power and enables 1–2 MHz switching with standard drivers
t_r / t_f	4.2–6.3 ns / 3.4–5.1 ns - Supports fast edge rates without excessive EMI in compact layouts
E_AS	120 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events
R_thJC	2.1 K/W - Enables >40 W power dissipation with minimal case-to-junction temperature rise
I_D continuous	40 A at T_C = 100 °C - Sustains full-rated current in thermally constrained notebook PCBs

Pinout & Package

P-TDSON-8 (Power-Transistor Dual Small Outline No-lead, 8-pin) package with exposed drain pad on bottom for enhanced thermal conduction. Standard JEDEC MO-247 variant with 5 mm × 6 mm footprint and 0.95 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (internally connected)	High-current output node; electrically and thermally tied to exposed copper pad
5	Gate	Control terminal requiring <17 nC charge for full enhancement; logic-compatible
Source	Source	Reference node for gate drive; pins 1–4 and 6–8 share common source connection via PCB trace

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V or 5 V microcontrollers
Low R_DS(on) × Q_g FOM	~104 mΩ·nC - balances conduction and switching loss for >95% efficiency in 12 V input buck converters
Avalanche-rated	120 mJ single-pulse E_AS - eliminates need for external snubbers in non-isolated DC/DC designs
Thermal resistance R_thJC	2.1 K/W - allows >40 W power handling with simple heatsinking or PCB copper area
Integrated body diode	V_SD = 0.93–1.2 V at 40 A - supports synchronous rectification with low forward drop and 10 nC Q_rr

Applications

Notebook CPU Core VRM

USB-C PD Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern laptop CPUs at up to 100 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) delivering high efficiency and fast transient response.

Use Value: 7.9 mΩ R_DS(on) and 10 nC Q_rr reduce conduction loss and reverse recovery loss, improving light-load efficiency by ~2% versus legacy MOSFETs.

Use Scenario: 20–100 W USB-C PD adapter with GaN or Si high-side switch and Si synchronous rectifier.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in secondary-side LLC or flyback topology.

Use Value: Logic-level gate and low C_rss enable clean turn-on/turn-off timing with minimal shoot-through risk when driven by dedicated SR controllers.

Industrial 24 V DC/DC Converter

Automotive ADAS Camera Power Module

Use Scenario: Compact 24 V to 3.3/5/12 V isolated or non-isolated converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched buck or half-bridge configuration.

Use Value: Avalanche rating and 150 °C T_j,max ensure reliability under bus transients and overtemperature conditions in unventilated enclosures.

Use Scenario: 12 V input to 1.8/3.3 V point-of-load regulator powering CMOS image sensors and ISP SoCs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in compact 1 MHz buck converter.

Use Value: Low Q_g and fast t_r/t_f allow efficient operation at high frequency while meeting automotive AEC-Q101 stress test requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 8.5 mΩ @ 4.5 V_GS; Q_g = 12.5 nC; SO-8 package	Higher R_DS(on) at low V_GS; no avalanche rating	Preferred where gate drive is fixed at 4.5 V and avalanche immunity is not required
DMN3025LFG-7	R_DS(on) = 2.5 mΩ @ 10 V_GS; Q_g = 15.5 nC; X2-DFN package	Lower R_DS(on) but higher Q_g; smaller thermal pad area	Selected when ultra-low conduction loss dominates over gate drive loss and board space is limited

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC079N03SG offers superior thermal resistance (2.1 K/W vs ≥3.5 K/W), JEDEC-qualified reliability for notebook use, and balanced FOM for 500 kHz–2 MHz operation-making it optimal for thermally constrained, high-reliability DC/DC stages.

Availability

BSC079N03SG is available at Aetrix Electronics and suitable for notebook VRMs, USB-C PD adapters, industrial DC/DC converters, and automotive camera power modules requiring stable component supply and long-term lifecycle support.

Supply support for BSC079N03SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

BSC079N03SG belongs to the OptiMOS®2 family, engineered specifically for high-efficiency, high-density DC/DC conversion in portable computing and communications infrastructure.

FAQ

Is BSC079N03SG suitable for synchronous rectification in 1 MHz buck converters?

Yes. With t_r = 4.2–6.3 ns, Q_g = 13–17 nC, and V_GS(th) = 1.2–2.0 V, it switches efficiently at 1 MHz when paired with a dedicated synchronous rectifier controller. Its low Q_rr (10 nC) and soft-recovery body diode further reduce switching loss and EMI in high-frequency operation.

What is the maximum continuous drain current at 85 °C case temperature?

Per the I_D vs. T_C curve (Rev. 1.01, page 4), BSC079N03SG sustains 40 A continuous drain current up to T_C = 100 °C. At T_C = 85 °C, derating is not required - the full 40 A rating remains valid under typical PCB cooling conditions with 6 cm² copper area.

Does BSC079N03SG have AEC-Q101 qualification?

No. BSC079N03SG is qualified per JEDEC standards for notebook applications (J-STD-20/JESD22), not AEC-Q101. For automotive ADAS use, it is deployed in non-safety-critical camera power modules where customer-level stress validation has been completed - but it is not officially AEC-Q101 certified.

Can BSC079N03SG replace BSC093N03LSG in existing designs?

Yes, with minor layout review. Both are P-TDSON-8, 30 V N-channel MOSFETs, but BSC079N03SG has lower R_DS(on) (7.9 mΩ vs. 9.3 mΩ) and higher Q_g (13–17 nC vs. 11–14 nC). Gate drive strength and thermal margin should be verified, especially in high-frequency or high-temperature operation.

BSC079N03SG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.6A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2230 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC079N03SG FAQ

1.How can I place an order for BSC079N03SG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC079N03SG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC079N03SG reliable?

The price and inventory of BSC079N03SG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC079N03SG is usually 5 days.

3.What payment methods are accepted for BSC079N03SG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC079N03SG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC079N03SG?

BSC079N03SG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC079N03SG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC079N03SG?

For technical support, including BSC079N03SG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC079N03SG requirements.

6.How does Aetrix verify that BSC079N03SG is sourced from the original manufacturer or authorized distributors?

All BSC079N03SG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC079N03SG meets industry standards.

7.What is the process for return or replacement of BSC079N03SG?

All BSC079N03SG units undergo pre-shipment inspection (PSI). If there is an issue with BSC079N03SG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC079N03SG part is unused and in its original packaging.

Return procedure for BSC079N03SG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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