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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0802LSATMA1

Name: BSC0802LSATMA1
Brand: Infineon Technologies
SKU: BSC0802LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0802LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0802LSATMA1.pdf

Description:: MOSFET N-CH 100V 20A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:4,408

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Product details

Overview

BSC0802LSATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 100 V drain-source voltage, 3.4 mΩ maximum R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and is optimized for high-efficiency synchronous rectification in SMPS topologies.

For engineers reviewing the BSC0802LSATMA1 datasheet, BSC0802LSATMA1 pinout, BSC0802LSATMA1 application, or BSC0802LSATMA1 equivalent, key selection criteria include its low gate charge (Q_G = 37 nC), avalanche-rated ruggedness (E_AS = 301 mJ), thermal resistance (R_thJC = 0.5 °C/W), and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FoM) of 126 mΩ·nC. Its gate plateau voltage is 2.9 V, enabling stable turn-on under logic-level control while maintaining robust noise immunity.

The integrated body diode exhibits fast reverse recovery (t_rr = 40–80 ns) and low Q_rr (42–84 nC), supporting high-frequency synchronous rectification without external Schottky diodes. Thermal design is enabled by direct-drain thermal path to PCB via pins 5–8.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports primary-side switching and secondary-side sync. rectification in 48 V input DC-DC and offline SMPS up to 100 V bus.
R_DS(on), max	3.4 mΩ @ V_GS = 10 V - Enables <1.7 W conduction loss at 50 A, critical for high-current output rails.
Q_G	37 nC @ 0–4.5 V - Reduces gate driver power demand and enables efficient 500 kHz+ switching with standard logic drivers.
E_AS	301 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers in flyback/LLC.
R_thJC	0.5 °C/W - Allows >150 W power dissipation with modest heatsinking, supporting compact board-level thermal management.
V_GS(th)	1.1–2.3 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO, avoiding marginal biasing in low-voltage control systems.
Q_OSS	91 nC - Limits turn-off energy loss and improves light-load efficiency in hard-switched converters.

Pinout & Package

PG-TDSON-8 (exposed drain pad) package with 0.65 mm pitch, 5.15 mm × 6.15 mm footprint, and thermally enhanced bottom-side copper for direct PCB heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Low-side reference node; tied to PCB ground plane for minimal loop inductance in high-di/dt sync. rectifier paths.
4	Gate	Control input; requires <37 nC charge for full enhancement; compatible with 3.3 V/5 V logic drivers without level-shifting.
5–8	Drain	High-current power node; electrically and thermally connected to exposed copper pad for simultaneous current conduction and heat extraction.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_G/Q_GD ratio (37 nC / 13–19 nC) minimizes Miller-induced shoot-through risk in half-bridge configurations.
100% avalanche tested	Guarantees single-pulse ruggedness to 301 mJ, enabling reliable operation in unclamped inductive switching events.
Superior thermal resistance	R_thJC = 0.5 °C/W allows >150 W dissipation with simple thermal vias-no external heatsink required in many 1U server or telecom PSU designs.
Logic-level gate drive	V_GS(th) ≤ 2.3 V ensures full enhancement using standard MCU I/O, reducing BOM count versus gate drivers in cost-sensitive AC-DC adapters.

Applications

Server VRM Output Stage

Telecom DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 0.8 V point-of-load conversion in dual-processor servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, operating at 500–800 kHz with interleaved gate timing.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 6 mΩ devices, directly improving VRM efficiency at 100 A load.

Use Scenario: 48 V input to 12 V/24 V isolated DC-DC module for base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC resonant converter, replacing discrete Schottky diodes.

Use Value: Integrated body diode with t_rr < 80 ns eliminates external diode cost and layout area while maintaining ZVS capability at 300 kHz.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side switch with bootstrap gate drive; leverages 100 V rating for 48 V nominal bus with 20% transient margin.

Use Value: Avalanche rating supports safe operation during motor phase reversal transients without clamping circuits, reducing component count.

Use Scenario: Boost switch in 6.6 kW two-phase interleaved PFC stage for EV onboard chargers.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology, switching at 65–100 kHz.

Use Value: Q_OSS = 91 nC lowers turn-off loss by ~25% vs. comparable 100 V MOSFETs, improving PFC efficiency above 98% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	R_DS(on) = 3.8 mΩ (V_GS = 10 V); Q_G = 42 nC; PG-TDSON-8 package	Slightly higher conduction loss and gate drive energy; identical thermal pad layout	Preferred where ST ecosystem alignment or automotive qualification (AEC-Q101) is required.
IRF7470PBF	R_DS(on) = 4.2 mΩ (V_GS = 10 V); Q_G = 52 nC; SO-8 package (non-exposed drain)	Higher R_thJA (62 °C/W) limits power density; no integrated thermal pad	Acceptable for lower-current (<60 A), lower-frequency (<200 kHz) designs where PCB space is less constrained.

Compared with STL110N10F7 and IRF7470PBF, BSC0802LSATMA1 delivers the lowest R_DS(on) × Q_G FoM and best thermal performance in PG-TDSON-8, making it optimal for high-density, high-efficiency SMPS where thermal headroom and switching speed are critical.

Availability

BSC0802LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for BSC0802LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC0802LSATMA1 belongs to the OptiMOSTM 5 family-designed specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial SMPS, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for BSC0802LSATMA1 at 100 °C case temperature?

The maximum continuous drain current is 99 A at T_C = 100 °C and V_GS = 10 V, per Table 2 of the official datasheet. This reflects derating from the 100 A rating at 25 °C due to junction temperature limits and thermal resistance constraints.

Does BSC0802LSATMA1 require a gate resistor for stability in synchronous rectifier applications?

Yes-a 2–5 Ω gate resistor is recommended to dampen ringing and prevent spurious turn-on from dv/dt coupling, especially when used as a low-side sync. FET in high-di/dt environments. The device's 1.5–2.3 Ω intrinsic gate resistance alone is insufficient for robust EMI control.

Can BSC0802LSATMA1 be used in linear regulator or LDO pass transistor applications?

No-it is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) diagram shows limited DC capability, and prolonged operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating curves beyond 10 ms pulses.

Is the body diode in BSC0802LSATMA1 suitable for freewheeling in non-synchronous buck converters?

Yes-the body diode has V_SD = 0.85–1.1 V at 50 A and t_rr = 40–80 ns, making it usable for low-frequency (<100 kHz), low-duty-cycle freewheeling. However, conduction losses exceed those of discrete Schottky diodes, so synchronous operation is strongly preferred for efficiency-critical designs.

BSC0802LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 115µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

BSC0802LSATMA1 FAQ

1.How can I place an order for BSC0802LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0802LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0802LSATMA1 reliable?

The price and inventory of BSC0802LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0802LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0802LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0802LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0802LSATMA1?

BSC0802LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0802LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0802LSATMA1?

For technical support, including BSC0802LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0802LSATMA1 requirements.

6.How does Aetrix verify that BSC0802LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0802LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0802LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0802LSATMA1?

All BSC0802LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0802LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0802LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0802LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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