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Infineon Technologies BSC0803LSATMA1

Part No.:
BSC0803LSATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC0803LSATMA1.pdf
Description:
MOSFET N-CH 100V 10A/44A TDSON-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,634

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Product details

Overview

BSC0803LSATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 100 V VDS, 44 A continuous drain current at TC = 25 °C, and 14.6 mΩ RDS(on) at VGS = 10 V. It features 100% avalanche tested ruggedness, low Qg (7.6 nC), and optimized gate charge profile for high-frequency synchronous rectification in SMPS.

For engineers reviewing the BSC0803LSATMA1 datasheet, BSC0803LSATMA1 pinout, BSC0803LSATMA1 application, or BSC0803LSATMA1 equivalent, this device is selected for high-efficiency DC-DC converters, server VRMs, and industrial power supplies where low conduction loss, fast switching, and thermal robustness are critical.

Technical Context

This OptiMOSTM 5 MOSFET uses trench-gate superjunction technology to achieve low RDS(on) × Qg figure-of-merit (FoM) of ~110 mΩ·nC. Its gate threshold voltage (1.1–2.3 V) enables direct drive from 3.3 V/5 V logic controllers without level-shifting.

The device integrates a fast-recovery body diode with trr = 26–52 ns and Qrr = 19–38 nC, supporting zero-voltage switching (ZVS) topologies. Thermal resistance RthJC is 1.4–2.4 °C/W, enabling high-power density layouts on standard FR4 PCBs with 6 cm² copper area.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for primary-side switching or secondary-side sync. rectification in 48 V input systems.
RDS(on), max 14.6 mΩ at VGS = 10 V, ID = 22 A - Enables ≤1.4 W conduction loss at 44 A, reducing heatsink requirements.
QG(0–4.5 V) 7.6 nC - Low gate charge minimizes driver power and supports >1 MHz switching in LLC resonant converters.
QOSS 20 nC - Low output charge reduces turn-off energy loss and improves light-load efficiency.
tr/tf 3 ns / 3 ns - Fast edge rates enable precise timing control and reduce switching transition losses.
VGS(th) 1.1–2.3 V - Logic-level compatibility allows direct interface with microcontrollers and PWM ICs operating at 3.3 V.
RthJC 1.4–2.4 °C/W - Enables 52 W power dissipation at TC = 25 °C, supporting compact thermal design.

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad for thermal enhancement.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain) Drain (D) All pins 1–7 and pin 8 are internally connected to drain; large copper area provides low-inductance, high-current path and thermal conduction to PCB.
S1, S2, S3 Source (S) Pins 1–3 are source terminals; paralleled layout reduces source inductance and improves switching stability in high-dI/dt applications.
G4 Gate (G) Pin 4 is isolated gate input; optimized placement minimizes gate loop inductance for clean turn-on/turn-off waveforms.

Key Features

Feature Design Value
Optimized for synchronous rectification Low Qg/Qgd ratio (7.6 nC / 4.2 nC) and fast trr support ZVS operation in forward/flyback converters.
100% avalanche rated Single-pulse EAS = 30 mJ ensures reliable operation under inductive switching stress without derating.
Logic-level gate drive VGS(th) range (1.1–2.3 V) guarantees full enhancement at 4.5 V, eliminating need for external gate drivers in low-voltage control circuits.
Enhanced thermal performance RthJA = 50 °C/W on standard 40 mm × 40 mm FR4 board enables >2.5 W ambient operation without forced air.
Halogen-free & RoHS compliant Meets IEC61249-2-21 and JEDEC J-STD-020 standards for lead-free reflow and environmental compliance.

Applications

Server VRM Output Stage Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 500 kHz–1 MHz with adaptive dead-time control.

Use Value: 14.6 mΩ RDS(on) and 3 ns rise time reduce conduction + switching losses by ≥18% vs. legacy 20 mΩ MOSFETs at 40 A load.

Use Scenario: 48 V input isolated DC-DC module for factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side switch in active clamp forward topology, driven by transformer-coupled gate signal.

Use Value: 100% avalanche rating and 2.4 °C/W RthJC ensure reliability during 48 V bus transients and sustained 44 A output current.

Telecom Rectifier Module Laptop Adapter Primary Switch

Use Scenario: 3 kW telecom rectifier with interleaved PFC + LLC stages.

IC Role / Device Role / Timing Role: High-side switch in LLC half-bridge resonant tank, switching at 300–600 kHz.

Use Value: Low Coss (170–220 pF) and Qoss (20 nC) minimize capacitive turn-on loss and improve ZVS margin across line/load range.

Use Scenario: Compact 65 W GaN-assisted adapter with hybrid synchronous rectification.

IC Role / Device Role / Timing Role: Low-side sync. FET replacing Schottky diode in QR flyback secondary, driven by self-bias circuit.

Use Value: VGS(th) < 2.3 V ensures reliable turn-on at 5 V gate bias, while 47 A IS rating handles peak diode-replacement currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL110N10F7 RDS(on) = 11.5 mΩ @ 10 V but higher Qg = 12.5 nC; TO-263 package with larger footprint and higher RthJA. Preferred in high-current, lower-frequency (<300 kHz) designs where thermal mass outweighs switching speed needs. Select when board space permits larger package and gate drive capability supports higher Qg.
IRF7470PBF RDS(on) = 15.5 mΩ @ 10 V; SO-8 package (non-exposed pad); no avalanche rating; Qg = 8.5 nC. Suitable for cost-sensitive consumer adapters where transient robustness is less critical than BOM cost. Choose only for non-automotive/non-industrial applications with strict cost targets and benign operating conditions.

Compared with STL110N10F7 and IRF7470PBF, BSC0803LSATMA1 delivers superior RDS(on) × Qg FoM and guaranteed avalanche ruggedness in a thermally optimized SuperSO8 package-making it optimal for high-density, high-reliability SMPS where efficiency and long-term field stability are prioritized.

Availability

BSC0803LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for BSC0803LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC0803LSATMA1 belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency switched-mode power supplies targeting datacenter, telecom, and industrial power conversion.

FAQ

What is the maximum continuous drain current at TC = 100 °C?

The BSC0803LSATMA1 supports 28 A continuous drain current at case temperature of 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This derating reflects thermal limits of the SuperSO8 package and must be validated with actual PCB layout and airflow conditions.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the integrated body diode has trr = 26–52 ns and Qrr = 19–38 nC at IF = 22 A, making it viable for quasi-resonant and active-clamp forward converters. However, for ultra-high-frequency hard-switching (>1 MHz), external Schottky clamping may still be recommended.

Does this MOSFET require gate resistors for stability in high-speed switching?

Yes-a series gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's low gate resistance (1–1.5 Ω) and fast switching edges make external damping essential for EMI control and gate driver protection.

Can BSC0803LSATMA1 replace older OptiMOSTM 3 or 4 devices in existing designs?

Yes-pin-compatible with previous OptiMOSTM generations in SuperSO8, but with improved RDS(on), lower Qg, and tighter VGS(th) distribution. Layout reuse is possible, though gate drive strength and thermal margin should be re-verified due to higher peak efficiency and reduced losses.

BSC0803LSATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
14.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 52W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-6

BSC0803LSATMA1 FAQ

1.How can I place an order for BSC0803LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0803LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0803LSATMA1 reliable?

The price and inventory of BSC0803LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0803LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0803LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0803LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0803LSATMA1?

BSC0803LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0803LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0803LSATMA1?

For technical support, including BSC0803LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0803LSATMA1 requirements.

6.How does Aetrix verify that BSC0803LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0803LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0803LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0803LSATMA1?

All BSC0803LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0803LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0803LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0803LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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