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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC080N03LSGATMA1

Name: BSC080N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC080N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC080N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC080N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 14A/53A TDSON

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Product details

Overview

BSC080N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS. It delivers 30 V V_DS, 8 mΩ R_DS(on) (max) at V_GS = 10 V, 53 A continuous drain current at T_C = 25 °C, and is avalanche rated for robustness in hard-switching topologies-used in server VRMs and POL converters.

For engineers reviewing the BSC080N03LSGATMA1 datasheet, BSC080N03LSGATMA1 pinout, BSC080N03LSGATMA1 application, or BSC080N03LSGATMA1 equivalent, key selection criteria include gate charge (Q_g = 7.5–10.0 nC), thermal resistance (R_thJC = 3.6 K/W), diode forward voltage (V_SD = 0.88–1.1 V), and logic-level drive compatibility (V_GS(th) = 1–2.2 V).

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_gs ratio (≈0.45 typ.) and fast turn-on delay (3.3 ns) support high-frequency operation up to 1 MHz in synchronous buck stages.

The MOSFET integrates a robust body diode with low Q_rr (≤10 nC) and high dv/dt immunity (6 kV/µs), enabling reliable reverse recovery in non-isolated topologies without external snubbing. Thermal design is facilitated by bottom-side cooling via the exposed drain pad in the PG-TDSON-8 package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V input rails with 25 % margin for transients in telecom and server power supplies.
R_DS(on) max	8 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 30 A, critical for high-current POL stages.
I_D cont.	53 A @ T_C = 25 °C - Sustains peak load currents in multi-phase VRMs without derating.
Q_g	7.5–10.0 nC - Low gate drive energy reduces controller IC loading and enables efficient 500 kHz–1 MHz switching.
R_thJC	3.6 K/W - Allows direct heatsinking to chassis or PCB copper, supporting >90 % efficiency at 40 A.
V_GS(th)	1–2.2 V - Fully enhanced with 3.3 V or 5 V logic-level drivers, eliminating need for gate boosters.
E_AS	15 mJ - Withstands single-pulse inductive energy in hot-swap and overload conditions per JEDEC AEC-Q101 stress profiles.
Q_rr	≤10 nC - Minimizes reverse recovery loss and EMI in synchronous rectification applications.

Pinout & Package

PG-TDSON-8 (JEDEC MO-263AA) package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1–8 arranged in two rows; drain terminals occupy pins 1, 2, 3, 4, 5, 7, and 8; source connected to pin 6 and internal die substrate; gate at pin 6 (isolated).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1,2,3,4,5,7,8)	Main current path collector	Multi-pin parallel routing lowers parasitic inductance and improves current sharing in high-di/dt switching.
Source (Pin 6)	Reference node for gate drive	Single-source pin simplifies Kelvin sensing layout and reduces gate loop inductance in critical gate driver paths.
Gate (Pin 6 – isolated pad)	Control terminal	Electrically isolated gate pad enables clean, low-inductance gate connection independent of source return path.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, compatible with standard microcontroller GPIO and low-voltage PWM controllers.
FOM (Q_g × R_DS(on))	~60 mΩ·nC - Benchmark figure-of-merit for high-frequency SMPS, balancing switching and conduction loss.
Avalanche-rated	Rated for repetitive single-pulse avalanche energy (E_AS = 15 mJ), enabling ruggedness in unclamped inductive switching.
Low Q_rr body diode	Q_rr ≤ 10 nC ensures minimal reverse recovery loss and reduced EMI in synchronous rectifier mode.
RoHS & halogen-free	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally constrained industrial and telecom deployments.

Applications

Server Voltage Regulator Modules

Telecom DC/DC Converters

Use Scenario: High-current, multiphase buck converters delivering 0.8–1.2 V @ >100 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck stage, operating at 500 kHz–1 MHz with tight duty-cycle control.

Use Value: 8 mΩ R_DS(on) and 3.6 K/W R_thJC enable >94 % efficiency at full load while maintaining junction temperature <125 °C under forced air cooling.

Use Scenario: 48 V input to 12 V intermediate bus conversion in 5G base station power systems.

IC Role / Device Role / Timing Role: Main switching FET in half-bridge or active clamp forward topology, handling 20–40 A continuous output.

Use Value: Avalanche rating and 6 kV/µs dv/dt immunity ensure reliability during line transients and hot-plug events without added clamping circuitry.

Industrial Motor Drives

Automotive ADAS Power Supplies

Use Scenario: Low-voltage (<30 V) H-bridge gate drivers for BLDC fan and pump control in PLC and factory automation equipment.

IC Role / Device Role / Timing Role: Half-bridge low-side switch with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: Low V_SD (0.88–1.1 V) and fast t_f (2.6 ns) reduce freewheeling loss and improve thermal stability at 20 kHz PWM frequencies.

Use Scenario: Compact 12 V input to 3.3/5 V point-of-load regulation for radar sensor modules and camera ECUs in ADAS subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter, driven by dedicated gate controller with adaptive dead-time management.

Use Value: Logic-level threshold (1–2.2 V) allows direct drive from automotive-grade PMICs; Q_g < 10 nC minimizes gate driver power consumption in always-on domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 9.5 mΩ @ 4.5 V; Q_g = 11.5 nC; SO-8 package; R_thJA = 62 K/W	Higher thermal resistance limits power density; suited for lower-current (<25 A), space-constrained designs.	Prefer when board area is constrained and thermal budget allows higher R_thJA.
DMN3025LFG-7	R_DS(on) = 2.5 mΩ @ 10 V; but V_GS(th) = 1.2–2.4 V; X1-WLBGA package; no exposed drain pad	Lower R_DS(on) but inferior thermal performance (R_thJC not specified); unsuitable for >30 A continuous loads.	Prefer only for ultra-low-loss, low-current (<15 A), ultra-thin form factor applications.

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC080N03LSGATMA1 offers superior thermal dissipation (R_thJC = 3.6 K/W), balanced FOM, and proven avalanche ruggedness-making it optimal for high-reliability, high-current DC/DC stages where thermal headroom and transient robustness are critical.

Availability

BSC080N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply across extended production lifecycles.

Supply support for BSC080N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 Power-MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal robustness are essential.

FAQ

Is BSC080N03LSGATMA1 suitable for synchronous rectification?

Yes. Its low Q_rr (≤10 nC), low V_SD (0.88–1.1 V), and logic-level gate threshold (1–2.2 V) make it well-suited for synchronous rectifier roles in buck and flyback converters. The body diode's fast recovery and low forward drop reduce conduction loss and EMI compared to Schottky alternatives.

What is the maximum recommended gate resistor for 1 MHz operation?

For 1 MHz switching with minimal overshoot, a gate resistor of 1.6 Ω is validated per the datasheet (Figure 16). This value balances rise/fall times (t_r = 2.8 ns, t_f = 2.6 ns) and ringing suppression while keeping gate drive power within typical controller limits.

Does this MOSFET require a gate driver IC?

A dedicated gate driver is recommended above 20 A peak current or when minimizing propagation delay is critical. At lower currents (<10 A), 3.3 V or 5 V microcontroller GPIO can drive it directly due to its logic-level threshold and moderate Q_g (7.5–10.0 nC), but driver use improves noise immunity and switching consistency.

How does the PG-TDSON-8 package aid thermal management?

The PG-TDSON-8 exposes the drain pad on the bottom surface, enabling direct thermal coupling to PCB copper pours or heatsinks. With R_thJC = 3.6 K/W, it achieves significantly lower junction-to-case temperature rise than SO-8 or TO-252 packages-critical for maintaining reliability at >40 A continuous current in compact layouts.

BSC080N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC080N03LSGATMA1 FAQ

1.How can I place an order for BSC080N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC080N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC080N03LSGATMA1 reliable?

The price and inventory of BSC080N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC080N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC080N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC080N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC080N03LSGATMA1?

BSC080N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC080N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC080N03LSGATMA1?

For technical support, including BSC080N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC080N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC080N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC080N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC080N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC080N03LSGATMA1?

All BSC080N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC080N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC080N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC080N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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