Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC080N03MSGATMA1

Name: BSC080N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC080N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC080N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC080N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 13A/53A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,441

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC080N03MSGATMA1 from Infineon Technologies is an N-channel Power-MOSFET in PG-TDSON-8 package, optimized for 5 V gate drive in notebook CPU VRMs and point-of-load (POL) converters. It delivers R_DS(on) = 8.2 mΩ @ V_GS = 4.5 V, 30 V V_DS, and 47 A continuous drain current at T_C = 25 °C - enabling high-efficiency synchronous rectification in compact DC/DC stages.

For engineers reviewing the BSC080N03MSGATMA1 datasheet, BSC080N03MSGATMA1 pinout, BSC080N03MSGATMA1 application, or BSC080N03MSGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche tested ruggedness, JEDEC-qualified reliability for computing power delivery, and thermal resistance R_thJC = 3.6 K/W for bottom-side cooling.

Technical Context

This OptiMOS™3 M-Series MOSFET uses trench-based silicon technology to achieve enhanced switching performance at low gate voltages. Its dynamic parameters - C_iss = 1850 pF (typ), Q_g = 11.5 nC (typ), Q_gd = 3.1 nC (typ) - are tuned for high-frequency SMPS operation up to 1 MHz with minimal switching loss.

The device integrates a robust body diode with Q_rr = 10 nC (max) and V_SD = 0.89 V (typ) at I_F = 30 A, supporting efficient synchronous FET operation and hard-switched flyback or buck-boost topologies where reverse recovery behavior critically impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rails and 12 V intermediate bus architectures without derating
R_DS(on) @ 4.5 V	8.2 mΩ (typ) - enables <1.5 W conduction loss at 30 A in POL stage
I_D cont. @ T_C=25°C	47 A - sufficient for high-current CPU/GPU core voltage regulation
Q_g total	11.5 nC (typ) - reduces gate driver power demand and enables fast turn-on with low V_GS
R_thJC	3.6 K/W - allows direct thermal coupling to heatsink or PCB copper via exposed drain pad
E_AS	15 mJ - withstands single-pulse inductive energy in overcurrent fault conditions
Q_rr	10 nC (max) - minimizes reverse recovery loss and associated voltage spikes in sync-FET mode

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for thermal and electrical connection. Pin 1–8 arranged in two rows (4+4); drain terminals occupy pins 1, 2, 3, 4, 5, 7, and 8; gate on pin 6; source on pin 6 (common with gate) and internal connection to drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 1,2,3,4,5,7,8 + bottom pad)	Main current path output	Electrically and thermally connected to PCB copper pour; handles full load current and heat dissipation
Gate (Pin 6)	Control terminal	Low-threshold input requiring only 3.2 V plateau voltage; compatible with 3.3 V/5 V PWM controllers
Source (internal tie to drain pad ground reference)	Return path reference	Shared with gate return; requires low-inductance layout to minimize shoot-through risk in half-bridge

Key Features

Feature	Design Value
Optimized 4.5 V gate drive	Enables direct interface with standard PWM ICs without level-shifting, reducing BOM count in notebook VRMs
Low Q_g × R_DS(on) FOM	93.8 mΩ·nC - balances switching and conduction loss for >95% efficiency at 500 kHz POL designs
100% unclamped inductive avalanche tested	Guarantees robustness against transient overvoltage during hard switching or load dump events
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for computing and industrial applications - no early-life failure screening required
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive - suitable for consumer and medical-grade end equipment

Applications

Notebook CPU Voltage Regulator

GPU Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD mobile processors under dynamic load transients.

IC Role / Device Role / Timing Role: Synchronous high-side FET in each phase leg, switching at 300–600 kHz with 5 V gate drive.

Use Value: Low R_DS(on) and Q_g reduce phase loss by 18% vs. legacy 12 V gate MOSFETs, improving thermal margin in thin-profile chassis.

Use Scenario: Dual-phase 30 A VRM powering discrete graphics processing units in ultrabooks and mobile workstations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with zero-voltage switching assist.

Use Value: Body diode Q_rr ≤ 10 nC limits reverse recovery overshoot to <1.2× V_IN, eliminating need for external Schottky catch diodes.

Point-of-Load DC/DC Module

USB-C PD Fast Charging Converter

Use Scenario: Integrated 12 V-to-1.2 V POL module delivering up to 40 A in space-constrained telecom and networking equipment.

IC Role / Device Role / Timing Role: Primary switch in integrated buck controller + power stage IC, driven by internal 5 V gate driver.

Use Value: R_thJC = 3.6 K/W enables 40 A operation with <45 °C junction rise using only 6 cm² PCB copper - no external heatsink needed.

Use Scenario: 20 V input, 9 V/3 A USB-C PD 3.0 output buck converter with programmable voltage negotiation.

IC Role / Device Role / Timing Role: Main switching FET in high-frequency (1 MHz) constant-on-time controller architecture.

Use Value: C_oss = 595 pF (typ) and low Q_gd ensure stable operation across wide duty cycle range without snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 9.5 mΩ @ 4.5 V; Q_g = 13.5 nC; PG-TDSON-8 footprint identical	Slightly higher conduction loss; less optimized for >500 kHz switching due to higher C_oss	Preferred when gate drive strength exceeds 1 A and board layout favors Infineon's thermal pad alignment
DMN3025LFG-7	R_DS(on) = 8.5 mΩ @ 4.5 V; Q_g = 10.8 nC; same V_DS, but lower avalanche rating (E_AS = 9 mJ)	Not 100% avalanche tested; unsuitable for unclamped inductive loads in industrial motor drives	Acceptable for consumer-grade POL where cost sensitivity outweighs ruggedness requirements

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC080N03MSGATMA1 offers superior avalanche ruggedness and lower gate charge × R_DS(on) FOM - making it the preferred choice for high-reliability, high-frequency computing power delivery where thermal and transient margins are constrained.

Availability

BSC080N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, GPU core power delivery, and point-of-load DC/DC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC080N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™3 M-Series - designed specifically for high-efficiency, high-density DC/DC conversion in computing and portable electronics where low-voltage gate drive and thermal performance are critical.

FAQ

What is the maximum safe operating temperature for BSC080N03MSGATMA1?

The junction temperature must not exceed 150 °C under continuous operation. With R_thJC = 3.6 K/W and T_C = 100 °C, the device sustains 30 A at V_GS = 4.5 V without exceeding T_j limit. Derating curves in the datasheet confirm 33 A at T_C = 100 °C and 13 A at T_A = 25 °C with 50 K/W ambient thermal resistance.

Can BSC080N03MSGATMA1 be used as a synchronous rectifier in a 1 MHz buck converter?

Yes - its Q_gd = 3.1 nC (typ), C_oss = 595 pF (typ), and fast t_r/t_f (5.4 ns / 5.6 ns) enable clean switching at 1 MHz. The low V_GS(th) (1–2 V) ensures reliable turn-on with standard 5 V gate drivers, and the body diode's Q_rr ≤ 10 nC prevents excessive reverse recovery loss.

Is the PG-TDSON-8 package leadless and RoHS-compliant?

Yes - the PG-TDSON-8 package uses lead-free (Pb-free) plating and meets RoHS Directive 2011/65/EU. It is a surface-mount, leadless package with an exposed copper drain pad on the bottom for thermal and electrical connection, and complies with halogen-free standards per IEC61249-2-21.

Does BSC080N03MSGATMA1 require gate resistors for stability in high-speed switching?

A gate resistor of 1–2 Ω is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. The device's R_G = 1.2 Ω (typ) and low input capacitance make it sensitive to layout parasitics; simulation with actual board parasitics confirms optimal damping at 1.5 Ω for 500 kHz–1 MHz operation.

BSC080N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC080N03MSGATMA1 FAQ

1.How can I place an order for BSC080N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC080N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC080N03MSGATMA1 reliable?

The price and inventory of BSC080N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC080N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC080N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC080N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC080N03MSGATMA1?

BSC080N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC080N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC080N03MSGATMA1?

For technical support, including BSC080N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC080N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC080N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC080N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC080N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC080N03MSGATMA1?

All BSC080N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC080N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC080N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC080N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.