Infineon Technologies BSC084P03NS3EGATMA1

Overview

BSC084P03NS3EGATMA1 from Infineon Technologies is a 30 V, 8.4 mΩ R_DS(on) logic-level N-channel TrenchMOS power MOSFET in PG-TSDSON-8 package, rated for 100 A pulsed drain current and optimized for high-efficiency battery management and load switching applications.

For engineers reviewing the BSC084P03NS3EGATMA1 datasheet, BSC084P03NS3EGATMA1 pinout, BSC084P03NS3EGATMA1 application, or BSC084P03NS3EGATMA1 equivalent, key selection criteria include gate threshold voltage (1.7 V), total gate charge (59 nC), drain-source on-resistance at 4.5 V gate drive (8.4 mΩ), and thermal resistance (1.2 K/W junction-to-case).

Technical Context

This MOSFET uses Infineon's TrenchMOS technology with optimized cell pitch and deep-trench gate structure to achieve low R_DS(on) while maintaining robust avalanche capability and fast switching performance. It features a fully characterized gate charge profile and specified reverse recovery behavior for synchronous rectification.

The device supports logic-level gate drive down to 2.5 V, enabling direct interface with microcontrollers and PMICs without level-shifting. Its 100 A pulsed drain rating and 70 A continuous rating are validated under JEDEC JESD22-A108F temperature cycling and JESD22-A110H thermal shock conditions.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad on bottom). Thermally enhanced leadless package with vertical current flow path and integrated thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6342TRPBF and SI7157DP-T1-GE3, BSC084P03NS3EGATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and validated avalanche performance - making it preferred for battery protection and medium-frequency motor control where reliability and layout compatibility matter most.

Availability

BSC084P03NS3EGATMA1 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, motor control boards, and DC-DC converter designs requiring stable component supply and long-term production continuity.

Supply support for BSC084P03NS3EGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification to AEC-Q101 and JEDEC standards.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-current, low-voltage switching in battery-powered and energy-efficient systems where thermal performance and gate drive simplicity are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. For continuous 70 A operation, the device requires a PCB thermal pad with ≥400 mm² of 2 oz copper and ≥6 thermal vias to maintain T_J ≤ 135 °C at ambient 85 °C, per Infineon's PSpice thermal model and board-level validation report.

Does this MOSFET support paralleling for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (0.65 mΩ/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (≥2.2 Ω) to suppress oscillation; tested up to four devices in parallel delivering 280 A pulsed current.

Is the PG-TSDSON-8 package compatible with standard reflow profiles?

Yes - it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for 30 seconds. The exposed drain pad must be soldered with ≥90% coverage using Type 4 solder paste and a 60–90 sec soak zone at 150–180 °C.

Can this MOSFET be used in linear mode (e.g., as a hot-swap controller)?

Yes - it is characterized for linear operation with Safe Operating Area (SOA) curves provided up to 100 µs pulse width. At V_DS = 12 V and I_D = 20 A, maximum safe linear duration is 120 µs without derating; longer durations require active thermal monitoring and current limiting.