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Infineon Technologies BSC085N025S G

Part No.:
BSC085N025S G
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC085N025S G.pdf
Description:
MOSFET N-CH 25V 14A/35A TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,691

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Product details

Overview

BSC085N025S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency notebook DC/DC converters and synchronous buck regulators, featuring 25 V VDS, 8.5 mΩ RDS(on) at VGS = 10 V and ID = 35 A, avalanche-rated operation, and PG-TDSON-8 package with bottom-side thermal pad.

For engineers reviewing the BSC085N025S G datasheet, BSC085N025S G pinout, BSC085N025S G application, or BSC085N025S G equivalent, key selection criteria include gate charge (Qg = 11–14 nC), dv/dt ruggedness (6 kV/µs), thermal resistance (RthJC = 2.4 K/W), and low RDS(on) × Qg figure-of-merit for fast-switching SMPS designs.

Technical Context

This OptiMOS™2 power transistor employs trench-gate superjunction technology to achieve ultra-low on-resistance and fast switching with controlled EMI. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates an optimized body diode with low Qrr (≤10 nC) and VSD (0.93–1.1 V at 35 A), supporting high-frequency synchronous rectification in buck converters up to 1 MHz. Thermal performance is enhanced by the exposed drain pad in the PG-TDSON-8 package.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25 V - supports input rails up to 24 V in notebook VRMs and point-of-load converters
RDS(on) max8.5 mΩ at VGS = 10 V, ID = 35 A - enables <1 W conduction loss at 30 A in compact PCB layouts
Qg11–14 nC - balances switching speed and gate driver stress in 300–1000 kHz applications
RthJC2.4 K/W - allows >40 W power dissipation with minimal junction-to-case temperature rise under heatsink cooling
EAS120 mJ - withstands single-pulse inductive energy during hard-switching or fault events
dv/dt rating6 kV/µs - ensures reliable operation in high-slew-rate synchronous buck topologies without spurious turn-on
Qrr≤10 nC - reduces reverse recovery losses and EMI in high-frequency synchronous rectification

Pinout & Package

PG-TDSON-8 (Power-Transistor Dual-Side Cooling Outline) is a surface-mount, thermally enhanced 8-pin package with exposed drain pad on the bottom side for low-inductance, high-current routing and efficient heat transfer to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1–3, 5–7Drain (D)Internally connected to exposed bottom pad; carries full load current and serves as primary thermal path
4Gate (G)Control terminal; requires low-impedance gate driver due to 1.2 Ω RG and 14 nC Qg
8Source (S)Reference node for gate drive and current sensing; tied to power ground plane

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V - compatible with standard 3.3 V/5 V PWM controllers without gate boosters
Low RDS(on) × Qg FOM~90 mΩ·nC - minimizes combined conduction and switching losses in high-frequency SMPS
Avalanche-rated120 mJ single-pulse EAS - eliminates need for external snubbers in non-isolated DC/DC converters
Enhanced dv/dt immunity6 kV/µs rated - prevents false turn-on during fast voltage transients in high-side synchronous FET applications

Applications

High-Efficiency Notebook VRMSynchronous Buck Converter

Use Scenario: Core voltage regulation for Intel Core i-series CPUs in ultrabooks, operating at 0.8–1.5 V output and 30–60 A load current.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET in dual-phase buck converter with 500 kHz–1 MHz switching frequency.

Use Value: 8.5 mΩ RDS(on) and 10 nC Qrr reduce conduction and recovery losses, enabling >95% efficiency at 35 A.

Use Scenario: Point-of-load (POL) regulator supplying GPU memory or SoC I/O rails in portable computing platforms.

IC Role / Device Role / Timing Role: High-current, low-voltage power switch with fast turn-on/turn-off (tr/tf ≤ 6 ns) for tight duty-cycle control.

Use Value: 2.4 K/W RthJC and bottom-side thermal pad enable stable operation at Tj ≤ 125 °C under 40 W dissipation.

Server DDR5 Memory RegulatorIndustrial 24 V Input Buck Module

Use Scenario: 1.1 V/40 A DDR5 VDDQ regulator requiring high reliability and low noise in data center blade servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck topology with interleaved gate drive to minimize input ripple.

Use Value: Avalanche rating and 6 kV/µs dv/dt immunity ensure robustness against transient overvoltage during hot-plug events.

Use Scenario: Compact 24 V-to-5 V/12 V industrial power module for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Primary power switch in fixed-frequency (300 kHz) buck converter with wide ambient temperature range (-40 to +105 °C).

Use Value: -55 to +150 °C Tj rating and JEDEC J-STD-20 qualification support extended thermal cycling life in unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLHS6342TRPBFRDS(on) = 9.5 mΩ @ 4.5 V; Qg = 12.5 nC; SO-8 package (no exposed pad)Higher RthJA (62 K/W vs. 45 K/W) limits power handling in space-constrained designsPreferable where board-level thermal management is limited and lower gate charge is prioritized over thermal performance
DMTH3010LPS-13RDS(on) = 8.0 mΩ @ 4.5 V; Qg = 15.5 nC; PowerDI5060-8 package with top-side thermal padHigher Qg increases gate drive loss; different pinout requires layout revisionPreferred when lowest possible RDS(on) at 4.5 V is critical and top-side cooling is available

Compared with IRLHS6342TRPBF and DMTH3010LPS-13, BSC085N025S G delivers optimal balance of low RDS(on), moderate Qg, and superior bottom-side thermal dissipation-making it ideal for thermally dense notebook VRMs where PCB copper area is allocated beneath the FET.

Availability

BSC085N025S G is available at Aetrix Electronics and suitable for notebook VRMs, synchronous buck converters, DDR5 memory regulators, and industrial 24 V input power modules requiring stable component supply and long-term manufacturability.

Supply support for BSC085N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™2 product line targets high-frequency, high-efficiency DC/DC conversion in portable and server computing, emphasizing low RDS(on) × Qg FOM, avalanche ruggedness, and JEDEC-qualified reliability for mission-critical power stages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSC085N025S G supports 35 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on), enabling sustained high-current operation without derating in well-cooled notebook VRM layouts.

Is this MOSFET suitable for synchronous rectification in a 1 MHz buck converter?

Yes. With tr ≤ 6 ns, tf ≤ 5 ns, Qrr ≤ 10 nC, and low Coss (518–689 pF), the BSC085N025S G is explicitly optimized for synchronous rectification in high-frequency buck converters up to 1 MHz, as confirmed in Infineon's OptiMOS™2 application notes for notebook DC/DC.

Does the PG-TDSON-8 package require solder paste stencil optimization for the exposed drain pad?

Yes. The exposed drain pad must be soldered with ≥70% coverage using a 0.15 mm thick stencil and 50% open area pattern to ensure mechanical reliability and thermal performance. IPC-7351B land pattern and reflow profile per J-STD-020 are recommended for void minimization and RthJC consistency.

How does the avalanche rating impact system-level protection design?

The 120 mJ single-pulse EAS rating allows the BSC085N025S G to absorb inductive energy during short-circuit or startup faults without failure, reducing or eliminating the need for external clamping circuits in non-isolated buck converters-verified per JEDEC JESD22-A112 test conditions.

BSC085N025S G Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:
2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta), 52W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-1

BSC085N025S G FAQ

1.How can I place an order for BSC085N025S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC085N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC085N025S G reliable?

The price and inventory of BSC085N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC085N025S G is usually 5 days.

3.What payment methods are accepted for BSC085N025S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC085N025S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC085N025S G?

BSC085N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC085N025S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC085N025S G?

For technical support, including BSC085N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC085N025S G requirements.

6.How does Aetrix verify that BSC085N025S G is sourced from the original manufacturer or authorized distributors?

All BSC085N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC085N025S G meets industry standards.

7.What is the process for return or replacement of BSC085N025S G?

All BSC085N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC085N025S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC085N025S G part is unused and in its original packaging.

Return procedure for BSC085N025S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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