Infineon Technologies BSC085N025S G
- Part No.:
- BSC085N025S G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC085N025S G.pdf
- Description:
- MOSFET N-CH 25V 14A/35A TDSON
- Quantity:
- Payment:

- Shipping:

Inventory:3,691
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Product details
Overview
BSC085N025S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency notebook DC/DC converters and synchronous buck regulators, featuring 25 V VDS, 8.5 mΩ RDS(on) at VGS = 10 V and ID = 35 A, avalanche-rated operation, and PG-TDSON-8 package with bottom-side thermal pad.
For engineers reviewing the BSC085N025S G datasheet, BSC085N025S G pinout, BSC085N025S G application, or BSC085N025S G equivalent, key selection criteria include gate charge (Qg = 11–14 nC), dv/dt ruggedness (6 kV/µs), thermal resistance (RthJC = 2.4 K/W), and low RDS(on) × Qg figure-of-merit for fast-switching SMPS designs.
Technical Context
This OptiMOS™2 power transistor employs trench-gate superjunction technology to achieve ultra-low on-resistance and fast switching with controlled EMI. Its gate threshold voltage (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.
The device integrates an optimized body diode with low Qrr (≤10 nC) and VSD (0.93–1.1 V at 35 A), supporting high-frequency synchronous rectification in buck converters up to 1 MHz. Thermal performance is enhanced by the exposed drain pad in the PG-TDSON-8 package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - supports input rails up to 24 V in notebook VRMs and point-of-load converters |
| RDS(on) max | 8.5 mΩ at VGS = 10 V, ID = 35 A - enables <1 W conduction loss at 30 A in compact PCB layouts |
| Qg | 11–14 nC - balances switching speed and gate driver stress in 300–1000 kHz applications |
| RthJC | 2.4 K/W - allows >40 W power dissipation with minimal junction-to-case temperature rise under heatsink cooling |
| EAS | 120 mJ - withstands single-pulse inductive energy during hard-switching or fault events |
| dv/dt rating | 6 kV/µs - ensures reliable operation in high-slew-rate synchronous buck topologies without spurious turn-on |
| Qrr | ≤10 nC - reduces reverse recovery losses and EMI in high-frequency synchronous rectification |
Pinout & Package
PG-TDSON-8 (Power-Transistor Dual-Side Cooling Outline) is a surface-mount, thermally enhanced 8-pin package with exposed drain pad on the bottom side for low-inductance, high-current routing and efficient heat transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Drain (D) | Internally connected to exposed bottom pad; carries full load current and serves as primary thermal path |
| 4 | Gate (G) | Control terminal; requires low-impedance gate driver due to 1.2 Ω RG and 14 nC Qg |
| 8 | Source (S) | Reference node for gate drive and current sensing; tied to power ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V - compatible with standard 3.3 V/5 V PWM controllers without gate boosters |
| Low RDS(on) × Qg FOM | ~90 mΩ·nC - minimizes combined conduction and switching losses in high-frequency SMPS |
| Avalanche-rated | 120 mJ single-pulse EAS - eliminates need for external snubbers in non-isolated DC/DC converters |
| Enhanced dv/dt immunity | 6 kV/µs rated - prevents false turn-on during fast voltage transients in high-side synchronous FET applications |
Applications
| High-Efficiency Notebook VRM | Synchronous Buck Converter |
|---|---|
Use Scenario: Core voltage regulation for Intel Core i-series CPUs in ultrabooks, operating at 0.8–1.5 V output and 30–60 A load current. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET in dual-phase buck converter with 500 kHz–1 MHz switching frequency. Use Value: 8.5 mΩ RDS(on) and 10 nC Qrr reduce conduction and recovery losses, enabling >95% efficiency at 35 A. | Use Scenario: Point-of-load (POL) regulator supplying GPU memory or SoC I/O rails in portable computing platforms. IC Role / Device Role / Timing Role: High-current, low-voltage power switch with fast turn-on/turn-off (tr/tf ≤ 6 ns) for tight duty-cycle control. Use Value: 2.4 K/W RthJC and bottom-side thermal pad enable stable operation at Tj ≤ 125 °C under 40 W dissipation. |
| Server DDR5 Memory Regulator | Industrial 24 V Input Buck Module |
Use Scenario: 1.1 V/40 A DDR5 VDDQ regulator requiring high reliability and low noise in data center blade servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck topology with interleaved gate drive to minimize input ripple. Use Value: Avalanche rating and 6 kV/µs dv/dt immunity ensure robustness against transient overvoltage during hot-plug events. | Use Scenario: Compact 24 V-to-5 V/12 V industrial power module for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Primary power switch in fixed-frequency (300 kHz) buck converter with wide ambient temperature range (-40 to +105 °C). Use Value: -55 to +150 °C Tj rating and JEDEC J-STD-20 qualification support extended thermal cycling life in unventilated enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 9.5 mΩ @ 4.5 V; Qg = 12.5 nC; SO-8 package (no exposed pad) | Higher RthJA (62 K/W vs. 45 K/W) limits power handling in space-constrained designs | Preferable where board-level thermal management is limited and lower gate charge is prioritized over thermal performance |
| DMTH3010LPS-13 | RDS(on) = 8.0 mΩ @ 4.5 V; Qg = 15.5 nC; PowerDI5060-8 package with top-side thermal pad | Higher Qg increases gate drive loss; different pinout requires layout revision | Preferred when lowest possible RDS(on) at 4.5 V is critical and top-side cooling is available |
Compared with IRLHS6342TRPBF and DMTH3010LPS-13, BSC085N025S G delivers optimal balance of low RDS(on), moderate Qg, and superior bottom-side thermal dissipation-making it ideal for thermally dense notebook VRMs where PCB copper area is allocated beneath the FET.
Availability
BSC085N025S G is available at Aetrix Electronics and suitable for notebook VRMs, synchronous buck converters, DDR5 memory regulators, and industrial 24 V input power modules requiring stable component supply and long-term manufacturability.
Supply support for BSC085N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The OptiMOS™2 product line targets high-frequency, high-efficiency DC/DC conversion in portable and server computing, emphasizing low RDS(on) × Qg FOM, avalanche ruggedness, and JEDEC-qualified reliability for mission-critical power stages.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The BSC085N025S G supports 35 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on), enabling sustained high-current operation without derating in well-cooled notebook VRM layouts.
Is this MOSFET suitable for synchronous rectification in a 1 MHz buck converter?
Yes. With tr ≤ 6 ns, tf ≤ 5 ns, Qrr ≤ 10 nC, and low Coss (518–689 pF), the BSC085N025S G is explicitly optimized for synchronous rectification in high-frequency buck converters up to 1 MHz, as confirmed in Infineon's OptiMOS™2 application notes for notebook DC/DC.
Does the PG-TDSON-8 package require solder paste stencil optimization for the exposed drain pad?
Yes. The exposed drain pad must be soldered with ≥70% coverage using a 0.15 mm thick stencil and 50% open area pattern to ensure mechanical reliability and thermal performance. IPC-7351B land pattern and reflow profile per J-STD-020 are recommended for void minimization and RthJC consistency.
How does the avalanche rating impact system-level protection design?
The 120 mJ single-pulse EAS rating allows the BSC085N025S G to absorb inductive energy during short-circuit or startup faults without failure, reducing or eliminating the need for external clamping circuits in non-isolated buck converters-verified per JEDEC JESD22-A112 test conditions.
BSC085N025S G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-1
BSC085N025S G FAQ
1.How can I place an order for BSC085N025S G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC085N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC085N025S G reliable?
The price and inventory of BSC085N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC085N025S G is usually 5 days.
3.What payment methods are accepted for BSC085N025S G?
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4.How is shipping managed for BSC085N025S G?
BSC085N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC085N025S G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC085N025S G?
For technical support, including BSC085N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC085N025S G requirements.
6.How does Aetrix verify that BSC085N025S G is sourced from the original manufacturer or authorized distributors?
All BSC085N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC085N025S G meets industry standards.
7.What is the process for return or replacement of BSC085N025S G?
All BSC085N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC085N025S G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC085N025S G part is unused and in its original packaging.
Return procedure for BSC085N025S G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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