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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC090N03MSGATMA1

Name: BSC090N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC090N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC090N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC090N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 12A/48A 8TDSON

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Product details

Overview

BSC090N03MSGATMA1 from Infineon Technologies is an N-channel Power-MOSFET in PG-TDSON-8 package, optimized for 5 V gate-drive applications including notebook VRMs, VGA power stages, and point-of-load (POL) converters. It delivers R_DS(on) = 11.2 mΩ @ V_GS = 4.5 V, 30 V V_DS, 43 A continuous drain current at T_C = 25 °C, and 100% avalanche tested robustness.

For engineers reviewing the BSC090N03MSGATMA1 datasheet, BSC090N03MSGATMA1 pinout, BSC090N03MSGATMA1 application, or BSC090N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance R_thJC = 3.9 K/W, and JEDEC-qualified reliability for high-frequency SMPS designs.

Technical Context

This OptiMOS™3 M-Series MOSFET employs trench-gate superjunction technology to achieve ultra-low on-resistance and fast switching with minimized Q_g × R_DS(on). Its gate threshold voltage (1–2 V) enables reliable turn-on with 4.5 V logic-level drivers, while the integrated body diode supports synchronous rectification with Q_rr = 10 nC and V_SD = 0.9–1.1 V @ I_F = 30 A.

The device is characterized for operation up to T_j = 150 °C, features Pb-free and halogen-free construction per IEC61249-2-21, and is rated for 40 A single-pulse avalanche current with E_AS = 10 mJ - confirming ruggedness in inductive switching environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V input rails and 12 V POL systems with margin against transients
R_DS(on) @ 4.5 V	11.2 mΩ max - Enables high-efficiency 5 V-driven synchronous buck stages at >30 A DC load
Q_g total	12 nC max @ 10 V - Low gate drive power loss in 500 kHz–1 MHz SMPS designs
I_D continuous @ T_C=25°C	43 A - Sustains high-current loads without external heatsinking in compact PCB layouts
R_thJC	3.9 K/W - Enables direct thermal coupling to copper pour or heatsink for <10 °C junction rise at 30 W dissipation
E_AS	10 mJ - Withstands energy from inductive kickback in motor gate drives and POL hot-swap events
Q_rr	10 nC - Reduces reverse recovery losses in synchronous rectifier configurations

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for optimal thermal conduction. Standard 5 mm × 6 mm footprint, 0.75 mm height, and gull-wing leads compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Power Drain / Thermal Pad	Internally connected to source of all parallel die; soldered to large PCB copper area for R_thJA = 50 K/W
Source (pins 1–3, 5–7)	Source Terminal	Low-inductance multi-pin connection reduces source loop inductance for stable high-di/dt switching
Gate (pin 4)	Control Input	Single-point gate connection minimizes gate oscillation; requires <1.8 Ω external series resistor for damping
Source (pin 8)	Source Sense / Kelvin Source	Provides dedicated Kelvin source return path for accurate gate drive referencing and reduced Miller feedback

Key Features

Feature	Design Value
Optimized 4.5 V drive capability	Guaranteed R_DS(on) ≤ 11.2 mΩ at V_GS = 4.5 V enables direct interface with standard microcontroller GPIOs
Low Q_g × R_DS(on) FOM	134 mΩ·nC typical - balances conduction and switching loss for >1 MHz POL efficiency optimization
100% unclamped inductive avalanche tested	Validated to withstand 40 A single-pulse I_AS at T_C = 25 °C - eliminates need for external snubbers in flyback/LLC primary switches
JEDEC J-STD-20/JESD22 qualified	Qualified for automotive-grade temperature cycling (-55 to 150 °C), humidity, and mechanical shock per target application requirements
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for consumer, industrial, and medical end equipment

Applications

Notebook CPU/GPU VRM

VGA Card Power Stage

Use Scenario: High-density dual-phase buck converter supplying 1–2 V @ >60 A to mobile CPU cores under dynamic load.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 500–1000 kHz with 4.5 V gate drive from integrated PWM controller.

Use Value: 11.2 mΩ R_DS(on) at 4.5 V reduces conduction loss by 22% vs. legacy 15 mΩ parts, enabling 92% peak efficiency at 45 A.

Use Scenario: 12 V input to 1.2 V output conversion for discrete GPU memory and core rails on PCIe add-in cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck topology with tight layout constraints.

Use Value: Q_rr = 10 nC and V_SD = 0.95 V minimize reverse recovery loss and forward drop, reducing thermal stress in 25 mm² footprint.

Point-of-Load Converter

Industrial PLC I/O Module

Use Scenario: Distributed 3.3 V or 5 V supply for FPGA, ASIC, or sensor subsystems in telecom baseband units.

IC Role / Device Role / Timing Role: Primary switch in compact 12 V input, 3.3 V/20 A output buck regulator operating at 1 MHz.

Use Value: R_thJC = 3.9 K/W allows full 43 A rating with only 6 cm² PCB copper, eliminating discrete heatsinks in space-constrained modules.

Use Scenario: 24 V DC input to isolated 5 V/3.3 V auxiliary supplies powering analog front-end and digital logic in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Main switch in non-isolated buck pre-regulator feeding isolated DC/DC modules.

Use Value: 150 °C max junction temperature and JEDEC qualification ensure long-term reliability in 70 °C ambient industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 22 mΩ @ 4.5 V; smaller SOT-23 package; lower I_D = 4.3 A	Only suitable for sub-5 A loads; lacks avalanche rating and JEDEC qualification	Select only for low-power, cost-sensitive consumer applications where thermal margin is abundant
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V but 3.8 mΩ @ 4.5 V; SO-8 package; no specified E_AS	Higher gate charge (17 nC) increases driver loss; not avalanche-tested per datasheet	Prefer for 10 V drive systems requiring lowest possible R_DS(on); avoid in inductive switching without snubber

Compared with IRLML6344TRPBF and DMN3025LSD-13, BSC090N03MSGATMA1 uniquely combines 4.5 V drive compatibility, 43 A current capability, 100% avalanche testing, and JEDEC qualification - making it the only choice for thermally constrained, high-reliability 30 V POL and VRM designs.

Availability

BSC090N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook VRMs, VGA power stages, and point-of-load converters requiring stable component supply across production lifecycles.

Supply support for BSC090N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™3 M-Series - designed specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where 4.5 V gate drive and low FOM are critical.

FAQ

Is BSC090N03MSGATMA1 suitable for 3.3 V gate drive?

No. The gate threshold voltage range is 1–2 V, but R_DS(on) is not characterized below V_GS = 4.5 V. At 3.3 V, the device operates in linear region with significantly higher conduction loss and thermal risk. It is validated only for ≥4.5 V drive per datasheet test conditions.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies R_thJA = 50 K/W with a 6 cm² (40 mm × 40 mm) single-layer 70 µm copper area on FR4. Increasing copper area beyond this yields diminishing returns; doubling area improves R_thJA by only ~15%. For best results, use internal layers and thermal vias under the exposed drain pad.

Does this MOSFET require a gate resistor for stability?

Yes. With gate resistance R_G = 0.5–1.8 Ω (typical), a 1–2 Ω external series resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction, especially in high-di/dt applications like VRMs.

Can BSC090N03MSGATMA1 replace BSC093N03MSGATMA1 in existing designs?

No. Although both are 30 V OptiMOS™3 devices in PG-TDSON-8, BSC093N03MS has R_DS(on) = 9.3 mΩ @ 10 V but 12.5 mΩ @ 4.5 V - higher than BSC090N03MS's 11.2 mΩ @ 4.5 V. Layout and thermal design must be revalidated due to differing FOM and SOA curves.

BSC090N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC090N03MSGATMA1 FAQ

1.How can I place an order for BSC090N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC090N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC090N03MSGATMA1 reliable?

The price and inventory of BSC090N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC090N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC090N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC090N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC090N03MSGATMA1?

BSC090N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC090N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC090N03MSGATMA1?

For technical support, including BSC090N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC090N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC090N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC090N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC090N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC090N03MSGATMA1?

All BSC090N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC090N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC090N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC090N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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