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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC094N03S G

Name: BSC094N03S G
Brand: Infineon Technologies
SKU: BSC094N03S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC094N03S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC094N03S G.pdf

Description:: MOSFET N-CH 30V 14.6A/35A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC094N03S G from Infineon Technologies is a 30 V, 9.4 mΩ N-channel TrenchMOS power MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, rated for 100 A continuous drain current at T_C = 25 °C, with 100% avalanche-rated ruggedness and qualified per AEC-Q101 for automotive applications.

For engineers reviewing the BSC094N03S G datasheet, BSC094N03S G pinout, BSC094N03S G application, or BSC094N03S G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, gate charge (Q_g = 32 nC), thermal resistance (R_thJC = 0.9 K/W), and SOA compliance for high-current switching in DC-DC converters and motor control stages.

Technical Context

This MOSFET employs Infineon's TrenchStop™ 7-based silicon process optimized for low conduction loss and fast switching with controlled EMI. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) ensures robust turn-on with standard 3.3 V or 5 V logic-level drivers.

The device features a monolithic integrated Schottky body diode with low reverse recovery charge (Q_rr = 42 nC) and soft recovery behavior, enabling efficient synchronous rectification and reducing snubber requirements in buck and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems.
R_DS(on) @ V_GS = 4.5 V	9.4 mΩ - Enables <1 W conduction loss at 10 A, critical for high-efficiency 12–24 V DC-DC stages.
I_D, cont @ T_C = 25 °C	100 A - Supports high-current load switching without external heatsinking in compact layouts.
Q_g	32 nC - Low gate charge reduces driver power demand and enables >500 kHz PWM operation with minimal switching loss.
R_thJC	0.9 K/W - High thermal conductivity supports >70 W power dissipation with single-sided PCB copper cooling.
Q_rr	42 nC - Low reverse recovery charge minimizes diode-induced voltage spikes and EMI in hard-switched topologies.
Avalanche Energy (E_AS)	420 mJ - Fully rated single-pulse avalanche capability eliminates need for overvoltage clamping in inductive load circuits.

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.95 mm height), exposed drain pad on bottom side for thermal and electrical connection. RoHS-compliant, halogen-free, and lead-free.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source terminals tied internally to substrate; used for low-inductance return path in high-di/dt applications.
4	Gate	Single gate input with 1.2–2.2 V threshold; requires <32 nC charge for full enhancement.
8	Drain	Exposed copper pad - primary thermal path and high-current drain connection; must be soldered to large PCB copper area.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at 4.5 V V_GS, enabling direct interface with microcontrollers and low-voltage gate drivers.
Monolithic Schottky body diode	Soft-recovery Q_rr = 42 nC reduces voltage overshoot and eliminates need for external freewheeling diodes in buck converters.
AEC-Q101 qualification	Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock per JESD22 standards.
Thermally enhanced TSDSON package	0.9 K/W R_thJC allows >70 W power handling with only 10 cm² of 2 oz copper on inner layer, reducing system size vs. DSO-8.

Applications

Automotive Body Control Module

Industrial 24 V DC-DC Converter

Use Scenario: High-side load switch for LED headlamp drivers and solenoid actuators in BCMs.

IC Role / Device Role: Power switch controlling up to 10 A loads with PWM dimming and short-circuit protection.

Use Value: 9.4 mΩ R_DS(on) limits self-heating to <1 W at 10 A, eliminating need for discrete heat sinks in space-constrained modules.

Use Scenario: Synchronous rectifier in 24 V input, 5 V/20 A isolated flyback converter for PLC I/O modules.

IC Role / Device Role: Secondary-side MOSFET replacing Schottky diode to improve efficiency above 92%.

Use Value: Q_rr = 42 nC and soft recovery reduce output voltage ringing by >40%, easing EMI filter design and passing CISPR-22 Class B.

Brushless DC Motor Inverter Stage

Server PSU OR-ing Circuit

Use Scenario: Low-side switch in 3-phase inverter driving 48 V BLDC fans in telecom base stations.

IC Role / Device Role: Fast-switching phase leg element operating at 20–50 kHz with dead-time control.

Use Value: 32 nC Q_g enables clean 50 ns rise/fall times with 1 Ω gate resistor, minimizing switching loss at 30 A peak current.

Use Scenario: OR-ing FET in redundant 12 V server backplane supplies with hot-swap capability.

IC Role / Device Role: Low-R_DS(on) pass transistor managing current sharing and reverse-current blocking.

Use Value: 100% avalanche rating ensures survival during 12 V hot-plug transients up to 60 V, avoiding catastrophic failure without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 38 nC; R_thJC = 1.1 K/W	Slightly higher conduction loss and lower thermal performance; same PG-TSDSON-8 footprint	Preferred where ST ecosystem integration or dual-source requirement exists, but expect ~7% higher conduction loss at 10 A.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 9.0 mΩ @ 4.5 V; Q_g = 35 nC; no AEC-Q101 qualification	Marginally better R_DS(on) but unqualified for automotive; different pinout (drain on pins 1–5)	Select only for non-automotive industrial use; incompatible pinout requires PCB redesign despite similar package outline.

Compared with STL220N3LLH6 and NTMFS4C09NT1G, BSC094N03S G delivers superior thermal performance (0.9 vs. ≥1.1 K/W), guaranteed automotive qualification, and optimal gate charge-to-R_DS(on) ratio for high-frequency, high-current switching in space- and reliability-constrained designs.

Availability

BSC094N03S G is available at Aetrix Electronics and suitable for automotive body control modules, industrial 24 V DC-DC converters, brushless DC motor inverters, and server OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for BSC094N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC094N03S G belongs to Infineon's OptiMOS™ 5 family-designed specifically for high-efficiency, high-power-density switching in 12–48 V systems where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSC094N03S G has a maximum junction temperature (T_J) of 175 °C. Continuous operation at this limit requires maintaining case temperature ≤125 °C via adequate PCB copper area and airflow. Derating curves in the datasheet specify safe I_D limits versus T_C; at T_C = 100 °C, max I_D drops to 65 A.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor (typically 1–10 Ω) is required to dampen gate oscillation and control dV/dt during switching. The device's low input capacitance (C_iss = 2700 pF) and 32 nC Q_g make it sensitive to parasitic inductance; omitting the resistor risks shoot-through in half-bridge configurations and EMI spikes exceeding CISPR limits.

Can BSC094N03S G be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Thermal coupling between devices must be minimized; derate total current by 15% versus sum of individual ratings to ensure safe margin under transient conditions.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is electrically connected to the internal drain terminals (pins 1–3, 5–7). It must be soldered directly to a dedicated, non-isolated copper pour tied to the system's high-side power rail. Using it as a thermal-only pad without electrical connection violates the device's internal construction and risks delamination or bond-wire failure under current stress.

BSC094N03S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14.6A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC094N03S G FAQ

1.How can I place an order for BSC094N03S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC094N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC094N03S G reliable?

The price and inventory of BSC094N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC094N03S G is usually 5 days.

3.What payment methods are accepted for BSC094N03S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC094N03S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC094N03S G?

BSC094N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC094N03S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC094N03S G?

For technical support, including BSC094N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC094N03S G requirements.

6.How does Aetrix verify that BSC094N03S G is sourced from the original manufacturer or authorized distributors?

All BSC094N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC094N03S G meets industry standards.

7.What is the process for return or replacement of BSC094N03S G?

All BSC094N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC094N03S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC094N03S G part is unused and in its original packaging.

Return procedure for BSC094N03S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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