Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BSC097N06NSTATMA1

Part No.:
BSC097N06NSTATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC097N06NSTATMA1.pdf
Description:
MOSFET N-CH 60V 13A/48A TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,769

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSC097N06NSTATMA1 from Infineon Technologies is an N-channel 60 V OptiMOS™ power MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 48 A continuous drain current at TC = 25 °C, with RDS(on) max of 9.7 mΩ at VGS = 10 V and 175 °C junction temperature rating. It is optimized for high-efficiency synchronous rectification in SMPS applications.

For engineers reviewing the BSC097N06NSTATMA1 datasheet, BSC097N06NSTATMA1 pinout, BSC097N06NSTATMA1 application, or BSC097N06NSTATMA1 equivalent, key selection criteria include its low QOSS (14 nC), 100% avalanche-tested ruggedness, superior thermal resistance (RthJC = 2.1 K/W min), and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low conduction and switching losses in high-frequency DC-DC converters. Its gate charge profile-QG = 12 nC (0–10 V), QGD = 2.6–3.7 nC, and QOSS = 14 nC-enables fast, controlled turn-on/turn-off with minimal Miller-induced oscillation.

The device integrates a robust body diode with trr = 33–53 ns and QRR = 30 nC under VR = 30 V, IF = 30 A conditions, supporting efficient reverse recovery in synchronous buck and LLC topologies where bidirectional conduction is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for primary-side switching or secondary-side sync. rectification in ≤48 V output systems
RDS(on), max9.7 mΩ at VGS = 10 V, ID = 40 A - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained PCB layouts
ID, cont.48 A at TC = 25 °C - Supports high-current output rails in server VRMs and telecom PSUs without forced air cooling
QOSS14 nC - Low output charge reduces turn-off energy loss and EMI in hard-switched 300–1000 kHz converters
EAS13 mJ - Avalanche-rated for unclamped inductive switching events in flyback or active clamp circuits
RthJC2.1 K/W min - Enables direct thermal coupling to heatsink or copper pour, achieving >40 W power dissipation at ΔT = 85 K
VGS(th)2.1–3.3 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers

Pinout & Package

Package: SuperSO8 (PG-TDSON-8), surface-mount, exposed drain pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, SSourceCommon source node for all three internal parallel cells; tied to PCB ground plane via multiple vias
4, GGateControl terminal; requires <1.7 Ω external series resistance to damp ringing due to low gate resistance (1.1 Ω typ)
5, 6, 7, 8, DDrainHigh-current drain connection through exposed bottom pad; electrically and thermally coupled to PCB copper area

Key Features

FeatureDesign Value
175 °C rated junction temperatureEnables operation in high-ambient environments (e.g., enclosed telecom chassis) without derating at full current
100% avalanche testedGuarantees single-pulse ruggedness up to 13 mJ, eliminating need for external snubbers in inductive load switching
Superior thermal resistance (RthJC = 2.1 K/W)Reduces thermal interface complexity-no thermal paste or mechanical clamp needed when mounted on 6 cm² copper
Optimized for synchronous rectificationLow QG/QGD ratio and fast trr minimize cross-conduction loss and body diode conduction time in buck converters
JEDEC-qualified (J-STD-20/JESD22)Validated for reflow soldering and long-term reliability in industrial-grade production environments

Applications

Server VRM Output StageTelecom DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1 V/50 A point-of-load regulation in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, driven by dedicated gate controller with adaptive dead-time control.

Use Value: 9.7 mΩ RDS(on) and 14 nC QOSS reduce total power loss by ≥12% vs. legacy 12 mΩ devices at 500 kHz switching frequency.

Use Scenario: 48 V input to 12 V/30 A isolated DC-DC module for 5G base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology, operating at 250–400 kHz.

Use Value: 175 °C rating and 100% avalanche test allow sustained 30 A operation under transient overload without thermal shutdown.

Industrial PLC Power SupplyEV On-Board Charger Auxiliary PSU

Use Scenario: 24 V input to 5 V/10 A auxiliary supply powering microcontrollers and I/O in factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter, handling 24 V input with 60 V VDS margin.

Use Value: 13 mJ EAS withstands leakage inductance spikes during no-load to full-load transitions without failure.

Use Scenario: 400 V DC bus-derived 12 V/15 A auxiliary supply for OBC control board and gate drivers.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving isolated gate driver transformer.

Use Value: Low QG (12 nC) and fast td(off) (10 ns) enable precise PWM timing control and reduced shoot-through risk at 100–200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7RDS(on) = 10.5 mΩ, QG = 13.5 nC, RthJC = 2.5 K/W, same PG-TDSON-8 packageSlightly higher conduction loss and thermal resistance; lower avalanche rating (EAS = 9 mJ)Acceptable for cost-sensitive, non-avalanche-critical 48 V systems with adequate thermal margin
IRF7759L2TRPBFRDS(on) = 9.0 mΩ, QG = 15.5 nC, RthJC = 2.3 K/W, same SO-8 package but non-exposed drainLower RDS(on) but higher QG and inferior thermal performance due to lack of exposed drain padPreferred only if PCB layout cannot accommodate exposed-pad thermal design; avoid in high-power density applications

Compared with STL220N6F7 and IRF7759L2TRPBF, BSC097N06NSTATMA1 delivers the best balance of low RDS(on), low QOSS, and industry-leading thermal resistance-making it optimal for compact, high-reliability 60 V SMPS where thermal headroom and switching efficiency are jointly constrained.

Availability

BSC097N06NSTATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for BSC097N06NSTATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-frequency, high-efficiency power conversion in data center, telecom, and industrial power supplies where low RDS(on), fast switching, and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSC097N06NSTATMA1 supports 34 A continuous drain current at TC = 100 °C with VGS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the SuperSO8 package and must be verified against actual PCB thermal design using RthJA = 50 K/W under defined 6 cm² copper conditions.

Is this MOSFET suitable for use as a high-side switch in a buck converter?

No-it is not designed for high-side floating-gate operation without a dedicated bootstrap or isolated gate driver. Its gate threshold (2.1–3.3 V) and logic-level compatibility assume referenced source potential; high-side use requires level-shifting circuitry and careful dead-time management to avoid shoot-through.

Does the device have integrated ESD protection on the gate?

Yes-the gate oxide is protected per HBM ESD specification of ≥2 kV, as qualified under JESD22-A114. However, handling precautions (grounded wrist strap, anti-static mats) remain essential during assembly, and external RC snubbers are recommended in high-dV/dt environments to prevent gate overvoltage.

Can the body diode be used for freewheeling in non-synchronous designs?

Yes-the integrated body diode has VSD = 1.0–1.2 V at 30 A and trr = 33–53 ns, making it usable for freewheeling in low-frequency (<100 kHz) non-synchronous flyback or forward converters. However, its QRR = 30 nC and associated reverse recovery loss make synchronous rectification strongly preferred above 200 kHz.

BSC097N06NSTATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1075 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-1

BSC097N06NSTATMA1 FAQ

1.How can I place an order for BSC097N06NSTATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC097N06NSTATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC097N06NSTATMA1 reliable?

The price and inventory of BSC097N06NSTATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC097N06NSTATMA1 is usually 5 days.

3.What payment methods are accepted for BSC097N06NSTATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC097N06NSTATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC097N06NSTATMA1?

BSC097N06NSTATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC097N06NSTATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC097N06NSTATMA1?

For technical support, including BSC097N06NSTATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC097N06NSTATMA1 requirements.

6.How does Aetrix verify that BSC097N06NSTATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC097N06NSTATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC097N06NSTATMA1 meets industry standards.

7.What is the process for return or replacement of BSC097N06NSTATMA1?

All BSC097N06NSTATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC097N06NSTATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC097N06NSTATMA1 part is unused and in its original packaging.

Return procedure for BSC097N06NSTATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSC097N06NSTATMA1 Tags

  • BSC097N06NSTATMA1
  • BSC097N06NSTATMA1 PDF
  • BSC097N06NSTATMA1 Datasheet
  • BSC097N06NSTATMA1 Specifications
  • BSC097N06NSTATMA1 Images
  • Infineon Technologies
  • Infineon Technologies BSC097N06NSTATMA1
  • Buy BSC097N06NSTATMA1
  • BSC097N06NSTATMA1 Price
  • BSC097N06NSTATMA1 Distributor
  • BSC097N06NSTATMA1 Supplier
  • BSC097N06NSTATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER