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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC100N03LSGATMA1

Name: BSC100N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC100N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC100N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC100N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 13A/44A TDSON

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Product details

Overview

BSC100N03LSGATMA1 from Infineon Technologies is a 30 V, 100 A N-channel logic-level MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, featuring 1.7 mΩ R_DS(on) at V_GS = 10 V, 29 nC total gate charge, and qualified per AEC-Q101 for automotive applications. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor control stages.

For engineers reviewing the BSC100N03LSGATMA1 datasheet, BSC100N03LSGATMA1 pinout, BSC100N03LSGATMA1 application, or BSC100N03LSGATMA1 equivalent, key selection criteria include its ultra-low on-resistance, thermally enhanced exposed-drain DFN package, gate threshold compatibility with 3.3 V/5 V logic, and robust avalanche rating of 100 mJ.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, optimized for high-current, low-voltage switching with minimized conduction and switching losses. Its trench-gate structure enables stable R_DS(on) over temperature and fast turn-on/turn-off transitions supported by low gate-to-source and gate-to-drain capacitances (C_iss = 4200 pF, C_oss = 1100 pF).

The device integrates an integrated ESD protection diode and features a fully rated avalanche capability (E_AS = 100 mJ), enabling reliable operation under inductive load switching and transient overvoltage conditions without external snubbers in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; supports 24 V nominal bus systems with margin for transients.
R_DS(on) @ V_GS = 10 V	1.7 mΩ - Enables ≤1.7 W conduction loss at 100 A continuous drain current, critical for high-efficiency power stages.
I_D (continuous)	100 A - Rated for sustained current with proper PCB copper area (≥100 mm² 2 oz Cu) and thermal management.
Q_g (total)	29 nC - Low gate charge reduces driver power demand and enables efficient 500 kHz+ switching in synchronous buck converters.
E_AS	100 mJ - Fully rated single-pulse avalanche energy; eliminates need for external clamping in brushed DC motor drives.
T_j max	175 °C - Extended junction temperature rating supports operation in under-hood automotive environments.
C_iss	4200 pF - Input capacitance value used to calculate gate drive loop stability and Miller effect during hard switching.

Pinout & Package

Package: PG-TSDSON-8 (exposed drain pad), 3.3 mm × 3.3 mm × 0.9 mm, RoHS-compliant, halogen-free, with solderable top-side marking.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Power output / heat sink node	Internally connected to exposed copper pad; must be soldered to large PCB copper pour for thermal conduction and current handling.
4 (Gate)	Control input	Logic-level compatible; thresholds V_GS(th) = 1.2–2.2 V enable direct drive from MCU GPIOs or low-voltage gate drivers.
8 (Source)	Reference return path	Low-inductance source connection essential for minimizing shoot-through risk and gate oscillation in half-bridge configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.7 mΩ at 10 V ensures <1.7 W conduction loss at full rated current, reducing heatsink requirements in space-constrained modules.
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications including EPS, HVAC blowers, and ADAS camera power supplies.
Thermally enhanced DFN	Exposed drain pad delivers 1.2 K/W typical R_θJA on 100 mm² 2 oz Cu, enabling >80% higher power density vs. SO-8 equivalents.
Fast switching with low Q_g	29 nC total gate charge allows clean 10 ns rise/fall times with 1 Ω gate resistor, supporting high-frequency SMPS designs.
100% avalanche tested	Every unit undergoes single-pulse E_AS screening at 100 mJ, guaranteeing ruggedness in inductive switching without derating.

Applications

Automotive DC-DC Converter

Brushless Motor Inverter Stage

Use Scenario: 12 V to 5 V/3.3 V step-down converter supplying infotainment ECUs and ADAS sensors.

IC Role / Device Role: Synchronous rectifier in secondary-side of isolated flyback or non-isolated buck topology.

Use Value: 1.7 mΩ R_DS(on) cuts conduction loss by 40% vs. older TSDSON-8 MOSFETs, improving efficiency from 92% to 94.5% at 25 A load.

Use Scenario: Low-side switch in 3-phase inverter driving 200 W BLDC fan in engine cooling module.

IC Role / Device Role: High-current, low-loss switching element in phase-leg configuration with gate driver IC.

Use Value: 100 mJ E_AS rating withstands commutation spikes without snubber, simplifying PCB layout and reducing BOM count.

Server VRM Power Stage

Industrial PLC Output Module

Use Scenario: Multiphase buck converter delivering 50 A @ 1.2 V to CPU cores in edge server rack units.

IC Role / Device Role: Bottom-FET in interleaved phase leg, operating at 600 kHz with synchronous rectification.

Use Value: 29 nC Q_g minimizes gate driver losses and enables use of cost-effective dual-channel drivers instead of discrete FET drivers.

Use Scenario: Solid-state relay replacement in 24 V digital output module controlling solenoid valves and indicators.

IC Role / Device Role: Low-side load switch with integrated fault reporting via source-sense resistor.

Use Value: AEC-Q101 qualification ensures long-term reliability in harsh industrial environments with wide temperature cycling (−40 °C to +125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 32 nC; same 3.3 × 3.3 mm H2PAK-8 package.	Slightly higher gate charge increases driver loss; identical thermal footprint enables drop-in board reuse.	Prefer when ST ecosystem alignment or existing ST gate driver compatibility is required.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 1.9 mΩ @ 10 V; Q_g = 26 nC; smaller 3.3 × 3.3 mm SO-8FL package with lower C_iss.	Lower Q_g improves high-frequency efficiency but reduced avalanche rating (E_AS = 65 mJ) limits inductive load robustness.	Select for high-switching-frequency SMPS where avalanche stress is absent and gate drive optimization is critical.

Compared with STL220N3LLH6 and NTMFS4C09NT1G, BSC100N03LSGATMA1 offers the lowest R_DS(on) and highest E_AS, making it optimal for thermally constrained automotive and industrial loads requiring both conduction efficiency and ruggedness.

Availability

BSC100N03LSGATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and server VRM applications requiring stable component supply, long-lifecycle support, and AEC-Q101 compliance.

Supply support for BSC100N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

BSC100N03LSGATMA1 belongs to the OptiMOS™ 5 family, engineered specifically for high-current, low-voltage switching in automotive and industrial power systems where efficiency, thermal performance, and reliability are mission-critical.

FAQ

What is the maximum continuous drain current for BSC100N03LSGATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 72 A, derated from the 100 A rating at T_C = 25 °C per the SOA curve. This assumes adequate PCB copper area (≥100 mm² 2 oz Cu) and still-air convection cooling. The device maintains R_DS(on) ≤ 2.3 mΩ across this range due to its positive temperature coefficient.

Does BSC100N03LSGATMA1 require a gate resistor for safe operation in a 500 kHz buck converter?

Yes - a 1.5 Ω to 3.3 Ω gate resistor is recommended to damp ringing and limit peak gate current. With Q_g = 29 nC and typical driver output impedance of ~0.5 Ω, omitting the resistor risks overshoot (>12 V), shoot-through in half-bridge layouts, and EMI above 30 MHz. Layout best practices include short gate traces and local 100 nF decoupling at the source pad.

Can BSC100N03LSGATMA1 replace older TSDSON-8 MOSFETs like BSC010N03LS in existing designs?

Yes - it is pin-compatible and offers 30% lower R_DS(on) (1.7 mΩ vs. 2.4 mΩ) and 15% lower Q_g. No layout change is needed, but verify gate drive strength: the lower threshold (V_GS(th) down to 1.2 V) may cause unintended turn-on if source routing introduces noise. Add a 10 kΩ pull-down resistor if using legacy 3.3 V drivers with weak sink capability.

Is the exposed drain pad electrically isolated from the PCB ground plane in standard mounting?

No - the exposed drain pad is internally connected to pins 1–3 and 5–7 and must be soldered directly to a dedicated, non-grounded copper pour assigned to the drain net. Connecting it to system ground creates a short circuit. Thermal vias beneath the pad should connect only to inner-layer drain copper, not to ground or power planes.

BSC100N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC100N03LSGATMA1 FAQ

1.How can I place an order for BSC100N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC100N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC100N03LSGATMA1 reliable?

The price and inventory of BSC100N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC100N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC100N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC100N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC100N03LSGATMA1?

BSC100N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC100N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC100N03LSGATMA1?

For technical support, including BSC100N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC100N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC100N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC100N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC100N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC100N03LSGATMA1?

All BSC100N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC100N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC100N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC100N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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