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Infineon Technologies BSC106N025S G
- Part No.:
- BSC106N025S G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC106N025S G.pdf
- Description:
- MOSFET N-CH 25V 13A/30A TDSON
- Quantity:
- Payment:
- Shipping:
Inventory:4,666
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Product details
Overview
BSC106N025S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency DC/DC converters in notebook power supplies, featuring 25 V VDS, 10.6 mΩ RDS(on) at VGS = 10 V and ID = 30 A, avalanche-rated operation, and PG-TDSON-8 surface-mount package for low thermal resistance.
For engineers reviewing the BSC106N025S G datasheet, BSC106N025S G pinout, BSC106N025S G application, or BSC106N025S G equivalent, this device is selected for synchronous rectification, high-frequency SMPS switching, and thermally constrained notebook VRM stages where gate charge × RDS(on) figure-of-merit and dv/dt ruggedness are critical.
Technical Context
This OptiMOS™2 power transistor uses trench-based silicon technology to achieve low RDS(on) and fast switching with controlled Qgd/Qgs ratio (typ. 0.67), enabling clean turn-off in synchronous buck topologies. Its 2.4 K/W RthJC (bottom side) supports direct PCB copper thermal spreading.
The device is fully rated for repetitive avalanche energy (EAS = 80 mJ) and dv/dt immunity (6 kV/µs), meeting JEDEC JESD22-A115 reliability requirements for target notebook applications. Gate threshold voltage (1.2–2.0 V) ensures robust logic-level drive compatibility with 3.3 V and 5 V controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for 12–19 V input notebook rails |
| RDS(on) max | 10.6 mΩ @ VGS = 10 V, ID = 30 A - Enables <1.5 W conduction loss at full load |
| Qg total | 8.3–11 nC - Low gate drive power demand for >1 MHz switching |
| EAS | 80 mJ - Withstands single-pulse inductive energy without failure |
| dv/dt rating | 6 kV/µs - Immune to parasitic turn-on in high-dI/dt synchronous FET positions |
| RthJC | 2.4 K/W (bottom) - Enables direct thermal coupling to PCB copper pour |
| ID continuous | 30 A @ TC = 25 °C - Sustains full output current in compact VRM layouts |
Pinout & Package
PG-TDSON-8 (Power-Transistor Dual Small Outline No-lead, 8-pin) is a bottom-thermal-exposed, surface-mount package with exposed drain pad on underside. Pin 1 is marked by notch or dot; leads are gull-wing shaped for reflow compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Source (S) | Common source connection; pins 1–3 and 5–7 internally bonded to reduce source inductance |
| 4, 8 | Gate (G) | Dual gate inputs for parallel drive; reduces effective gate resistance to ~0.6 Ω |
| Exposed Pad | Drain (D) | Primary thermal path; must be soldered to ≥6 cm² internal/external copper for RthJA = 45 K/W |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V (RDS(on) ≤ 16.7 mΩ), compatible with standard PWM controllers |
| Low gate charge × RDS(on) | FOM = 88.5 mΩ·nC - Optimized for high-frequency, high-efficiency SMPS |
| Avalanche ruggedness | Rated for repetitive unclamped inductive switching (UIS) up to 80 mJ at Tj = 150 °C |
| Thermal performance | RthJC = 2.4 K/W (bottom) enables >40 W power dissipation with minimal heatsink area |
Applications
| Notebook CPU VRM | Ultrabook DC/DC Converter |
|---|---|
Use Scenario: High-density 1–2 phase buck converter supplying 1–1.5 V @ 30 A to Intel Core i-series CPUs. IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, switching at 500 kHz–1 MHz. Use Value: 10.6 mΩ RDS(on) and 11 nC Qg minimize both conduction and switching losses, extending battery runtime. | Use Scenario: Compact 3.3 V/5 V auxiliary rail generation in fanless ultrabooks with strict thermal envelope. IC Role / Device Role / Timing Role: Primary switch in high-side position of non-isolated buck regulator. Use Value: 6 kV/µs dv/dt rating prevents false turn-on during fast VDS transitions, improving system reliability. |
| SSD Power Management | USB-C PD Sink FET |
Use Scenario: 5 V input-to-3.3 V conversion for NVMe SSD controller and NAND flash power domains. IC Role / Device Role / Timing Role: Load switch controlling VCC_IO rail with inrush current limiting. Use Value: 30 A pulsed current rating and low RDS(on) support hot-plug sequencing without voltage droop. | Use Scenario: 20 V input protection and 5–20 V programmable output regulation in USB-C PD sink designs. IC Role / Device Role / Timing Role: Reverse-blocking pass FET in dual-MOSFET PD controller interface. Use Value: Avalanche rating and 25 V VDS margin ensure safe operation during cable disconnect transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML0030TRPBF | 20 V VDS, 30 mΩ RDS(on), SOT-23 package, lower current rating (4.3 A) | Not suitable for 30 A notebook VRM; limited to low-power load switches | Select only for space-constrained sub-1 A applications where thermal budget allows higher RDS(on) |
| DMN2020LSD-13 | 20 V VDS, 18 mΩ RDS(on), SO-8 package, no avalanche rating | Lacks EAS and dv/dt immunity; unsuitable for synchronous rectification with high di/dt | Acceptable only in non-synchronous or low-di/dt flyback designs where ruggedness is not required |
Compared with IRLML0030TRPBF and DMN2020LSD-13, BSC106N025S G delivers 3× lower RDS(on), full avalanche capability, and PG-TDSON-8 thermal performance-making it uniquely suited for high-current, high-reliability notebook and ultrabook power stages.
Availability
BSC106N025S G is available at Aetrix Electronics and suitable for notebook CPU VRMs, ultrabook DC/DC converters, and SSD power management systems requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.
Supply support for BSC106N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
BSC106N025S G belongs to the OptiMOS™2 family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in portable computing platforms where thermal density and switching loss are primary constraints.
FAQ
What is the maximum recommended gate drive voltage for BSC106N025S G?
The absolute maximum gate-source voltage is ±20 V, but operation above 10 V provides diminishing RDS(on) improvement while increasing gate driver stress. For logic-level compatibility and optimal FOM, 4.5 V to 10 V is recommended-verified by datasheet RDS(on) curves and Qg data across that range.
Can BSC106N025S G be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (increasing with junction temperature) enables inherent current sharing. The dual gate pins (pins 4 and 8) reduce effective gate resistance, minimizing oscillation risk. Layout symmetry and matched trace inductance are required per JEDEC JESD22-B111 guidelines.
Is the exposed drain pad electrically isolated from other terminals?
No-the exposed pad is internally connected to the drain (D) terminal and must be soldered to a PCB copper area designated as drain potential. It is not insulated; using it as a thermal pad without electrical connection will cause short-circuit failure. Thermal vias must connect only to drain net planes.
Does BSC106N025S G require external gate resistors in typical notebook VRM use?
Yes-a 1–2.7 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 52–78 pF) and PCB inductance. This improves EMI and prevents spurious turn-on during high dv/dt events, as confirmed by Infineon's application note AN2002-03 for OptiMOS™2 in synchronous buck converters.
BSC106N025S G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-1
BSC106N025S G FAQ
1.How can I place an order for BSC106N025S G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC106N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC106N025S G reliable?
The price and inventory of BSC106N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC106N025S G is usually 5 days.
3.What payment methods are accepted for BSC106N025S G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC106N025S G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC106N025S G?
BSC106N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC106N025S G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC106N025S G?
For technical support, including BSC106N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC106N025S G requirements.
6.How does Aetrix verify that BSC106N025S G is sourced from the original manufacturer or authorized distributors?
All BSC106N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC106N025S G meets industry standards.
7.What is the process for return or replacement of BSC106N025S G?
All BSC106N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC106N025S G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC106N025S G part is unused and in its original packaging.
Return procedure for BSC106N025S G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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