Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC110N15NS5ATMA1

Name: BSC110N15NS5ATMA1
Brand: Infineon Technologies
SKU: BSC110N15NS5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC110N15NS5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC110N15NS5ATMA1.pdf

Description:: MOSFET N-CH 150V 76A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,506

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC110N15NS5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 150 V power conversion systems. It delivers 11 mΩ max R_DS(on) at V_GS = 10 V, 76 A continuous drain current (T_C = 25 °C), and 78 nC output charge (Q_OSS), enabling high-efficiency operation in DC-DC converters and motor drives.

For engineers reviewing the BSC110N15NS5ATMA1 datasheet, BSC110N15NS5ATMA1 pinout, BSC110N15NS5ATMA1 application, or BSC110N15NS5ATMA1 equivalent, key selection criteria include its 150 V V_DS, low gate charge × R_DS(on) figure-of-merit, PG-TDSON-8 thermal package, and 150 °C maximum junction temperature rating.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (3.0–4.6 V) ensures robust turn-on with standard 10 V gate drivers, and its internal body diode supports synchronous rectification with 45–90 ns reverse recovery time.

The MOSFET's dynamic characteristics-including 28 nC total gate charge (Q_G), 11.5 nC switching charge (Q_SW), and 515–685 pF output capacitance (C_OSS)-are optimized for hard-switched topologies operating up to several hundred kHz. Thermal resistance R_thJC of 0.6 K/W enables high-power density designs when mounted on a 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V and 60 V bus systems with margin.
R_DS(on), max	11 mΩ @ V_GS = 10 V - Enables low conduction loss in high-current paths (e.g., <1.2 W loss at 38 A).
I_D, cont	76 A @ T_C = 25 °C - Supports high-output-current DC-DC stages without parallel devices.
Q_G	28 nC - Low gate drive energy requirement reduces driver losses and simplifies gate driver selection.
Q_OSS	78 nC - Minimizes capacitive turn-off loss during hard switching, improving efficiency above 200 kHz.
T_j, max	150 °C - Allows operation in thermally constrained industrial and automotive under-hood environments.
R_thJC	0.6 K/W - Enables >120 W power dissipation with modest heatsinking, supporting compact board layouts.

Pinout & Package

Package: PG-TDSON-8 - Thermally enhanced 8-pin exposed-drain DSO-style surface-mount package with integrated heat slug for direct PCB thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Low-side return path; pins 1–3 are internally paralleled for low-inductance, high-current source connection.
4	Gate	Control input; requires 10 V for full enhancement; gate resistance typ. 1.1 Ω limits ringing and EMI.
5–8	Drain	High-side power node; pins 5–8 share the drain terminal and connect directly to the exposed thermal pad for optimal heat dissipation.

Key Features

Feature	Design Value
OptiMOSTM 5 trench technology	Delivers industry-leading FOM (Q_G × R_DS(on)) of ~308 Ω·nC, reducing combined conduction and switching loss.
Internal body diode	Rated for 86 A continuous forward current with 0.88 V typical V_SD, enabling reliable synchronous rectification without external diode.
Pb-free & RoHS compliant	Meets global environmental regulations and reflow soldering profiles up to 260 °C peak.
JEDEC-qualified	Validated per J-STD-020 (moisture sensitivity level 1) and JESD22-A108 (temperature cycling), ensuring reliability in production environments.

Applications

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V input buck converters delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase synchronous buck topology.

Use Value: 11 mΩ R_DS(on) and 28 nC Q_G reduce phase loss by >15% vs. legacy 20 mΩ MOSFETs at 500 kHz switching.

Use Scenario: 3-phase inverter stage for 1–3 kW PMSM/BLDC motors in CNC and packaging equipment.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules.

Use Value: 150 °C T_j rating and 0.6 K/W R_thJC sustain 76 A continuous current under forced-air cooling without derating.

Solar Microinverters

EV On-Board Chargers

Use Scenario: DC-DC isolation stage in transformerless microinverters converting 30–60 V PV input to 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier in active-clamp forward or LLC resonant converter.

Use Value: 45–90 ns t_rr and low Q_RR (46–92 nC) minimize body-diode conduction loss during zero-voltage switching transitions.

Use Scenario: Secondary-side synchronous rectification in 3.3 kW bidirectional OBC AC/DC and DC/DC stages.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge or dual-active-bridge topology.

Use Value: 78 nC Q_OSS and 2080–2770 pF C_ISS enable stable soft-switching down to 100 kHz with minimal voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N15F7AG	12.5 mΩ R_DS(on), 31 nC Q_G, same PG-TDSON-8 package	Higher gate charge increases driver loss; slightly lower current rating (70 A)	Preferable where cost sensitivity outweighs 10% higher switching loss.
IXTP110N15X4	13 mΩ R_DS(on), TO-220 package, no integrated body diode	Requires external Schottky diode for synchronous rectification; higher thermal resistance (1.2 K/W)	Only suitable when through-hole mounting and discrete diode integration are acceptable.

Compared with STL110N15F7AG and IXTP110N15X4, BSC110N15NS5ATMA1 offers the lowest R_DS(on) × Q_G product and superior thermal performance in surface-mount form, making it optimal for space-constrained, high-efficiency 150 V power stages.

Availability

BSC110N15NS5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and EV on-board chargers requiring stable component supply and long-term manufacturability.

Supply support for BSC110N15NS5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family-engineered specifically for high-frequency, high-efficiency power conversion in industrial, computing, and renewable energy systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum safe operating voltage for BSC110N15NS5ATMA1 in avalanche mode?

The device is rated for single-pulse avalanche energy (E_AS) of 100 mJ at I_D = 50 A with R_GS = 25 Ω. Its absolute maximum V_DS is 150 V, and avalanche capability is validated per JEDEC JESD22-A115. Operation beyond 150 V-even briefly-risks irreversible breakdown and is not supported.

Can BSC110N15NS5ATMA1 be used in linear (analog) mode operation?

No. This MOSFET is designed for switching applications only. Its Safe Operating Area (SOA) diagram shows limited DC capability-maximum linear-mode power is 125 W at T_C = 25 °C, but sustained operation in the linear region causes rapid thermal runaway due to positive temperature coefficient of R_DS(on).

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes. The integrated body diode is rated for 86 A continuous forward current (T_C = 25 °C) and exhibits 0.88 V typical forward voltage at 38 A and 25 °C. Its 45–90 ns reverse recovery time and 46–92 nC Q_RR make it viable for synchronous rectification up to 300 kHz in well-controlled layouts.

Does BSC110N15NS5ATMA1 require gate resistors for EMI control?

Yes. A series gate resistor (typically 2.2–10 Ω) is recommended to dampen gate ringing caused by parasitic inductance and prevent spurious turn-on. The device's gate resistance is 0.9–1.35 Ω (typ. 1.1 Ω), so external resistance ensures controlled dV/dt and meets CISPR-22 Class B EMI limits in high-frequency converters.

BSC110N15NS5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 76A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 91µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2770 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

BSC110N15NS5ATMA1 FAQ

1.How can I place an order for BSC110N15NS5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC110N15NS5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC110N15NS5ATMA1 reliable?

The price and inventory of BSC110N15NS5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC110N15NS5ATMA1 is usually 5 days.

3.What payment methods are accepted for BSC110N15NS5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC110N15NS5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC110N15NS5ATMA1?

BSC110N15NS5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC110N15NS5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC110N15NS5ATMA1?

For technical support, including BSC110N15NS5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC110N15NS5ATMA1 requirements.

6.How does Aetrix verify that BSC110N15NS5ATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC110N15NS5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC110N15NS5ATMA1 meets industry standards.

7.What is the process for return or replacement of BSC110N15NS5ATMA1?

All BSC110N15NS5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC110N15NS5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC110N15NS5ATMA1 part is unused and in its original packaging.

Return procedure for BSC110N15NS5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.