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Infineon Technologies BSC119N03S G
- Part No.:
- BSC119N03S G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC119N03S G.pdf
- Description:
- MOSFET N-CH 30V 11.9A/30A TDSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,740
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Product details
Overview
BSC119N03S G from Infineon Technologies is a 30 V, 11.9 mΩ, N-channel TrenchMOS power MOSFET in PG-TSDSON-8 package, rated for 50 A continuous drain current at TC = 25 °C, with 100% avalanche-rated ruggedness and qualified per AEC-Q101 for automotive applications.
For engineers reviewing the BSC119N03S G datasheet, BSC119N03S G pinout, BSC119N03S G application, or BSC119N03S G equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, low gate charge (Qg = 10 nC), fast switching performance (ton = 7.2 ns), thermal resistance (RthJC = 1.2 K/W), and AEC-Q101 qualification status.
Technical Context
This MOSFET employs Infineon's TrenchMOS technology to achieve low on-resistance and high cell density in a thermally enhanced 3.3 mm × 3.3 mm surface-mount package. It features a logic-level gate threshold (VGS(th) = 1.2–2.2 V) and supports 4.5 V drive for direct microcontroller interfacing.
The device integrates an ultra-low Qgd/Qg ratio (0.22) for reduced Miller effect and improved hard-switching robustness. Its 100% unclamped inductive switching (UIS) rating ensures reliable operation under transient overcurrent conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V automotive rail and 24 V industrial systems. |
| RDS(on) @ VGS = 4.5 V | 11.9 mΩ - Enables <1 W conduction loss at 9 A DC, suitable for high-efficiency DC-DC and motor control stages. |
| ID, cont @ TC = 25 °C | 50 A - Continuous current capability with standard PCB copper area and minimal heatsinking. |
| Qg | 10 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in synchronous buck converters. |
| RthJC | 1.2 K/W - Thermal resistance from junction to case supports >30 W power dissipation with moderate heatsink attachment. |
| AEC-Q101 Qualified | Yes - Validated for automotive powertrain and body electronics per stress test requirements including HTGB, HTRB, and UIS. |
Pinout & Package
Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad). Thermally optimized for bottom-side cooling via PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Source | Internally paralleled source terminals; connect directly to ground plane for lowest inductance and thermal path. |
| 4 | Gate | Single gate input; requires <10 Ω series resistor to suppress ringing during fast edge transitions. |
| 8 | Drain | Exposed thermal pad - must be soldered to large PCB copper area for thermal and electrical connection to high-side node or bus rail. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at 4.5 V, eliminating need for gate boosters in 3.3 V/5 V MCU-controlled loads. |
| 100% UIS tested | Rated for single-pulse unclamped inductive switching up to EAS = 33 mJ, enabling robust solenoid and relay driving. |
| Low Qgd/Qg ratio | 0.22 - Minimizes Miller plateau duration and improves dv/dt immunity in half-bridge configurations. |
| Halogen-free & RoHS compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and IPC/JEDEC J-STD-033 handling requirements. |
Applications
| Automotive Body Control Module | Industrial DC Motor Driver |
|---|---|
Use Scenario: Driving 12 V window lift motors and seat adjusters in passenger vehicles. IC Role / Device Role / Timing Role: High-side load switch with integrated reverse polarity protection and short-circuit current limiting. Use Value: 11.9 mΩ RDS(on) limits I²R heating to <0.5 W at 6.5 A stall current, enabling compact PCB layout without forced air cooling. | Use Scenario: Half-bridge output stage in 24 V brush DC motor controllers for factory automation. IC Role / Device Role / Timing Role: Low-side switching element synchronized to complementary high-side FET with dead-time control. Use Value: 10 nC Qg allows clean 500 kHz PWM switching with standard gate drivers, reducing switching losses by 35% vs. comparable 20 mΩ parts. |
| Server 48 V Intermediate Bus Converter | LED Headlamp Dimming Circuit |
Use Scenario: Synchronous rectifier in 48 V-to-12 V isolated DC-DC modules for data center PSUs. IC Role / Device Role / Timing Role: Secondary-side power switch operating in continuous conduction mode (CCM) with zero-voltage switching (ZVS) assist. Use Value: 1.2 K/W RthJC enables >25 W dissipation with 2 oz copper and thermal vias, supporting >95% efficiency at full load. | Use Scenario: PWM dimming switch for adaptive LED headlamps requiring precise current regulation and fast fade-in/fade-out. IC Role / Device Role / Timing Role: Low-side current sink controlling LED string current via duty-cycle modulation. Use Value: 7.2 ns ton and 4.2 ns toff ensure sub-microsecond edge fidelity, eliminating visible flicker at 2 kHz dimming frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 12.5 mΩ @ 4.5 V; Qg = 12.5 nC; non-AEC-Q101 qualified | Lacks automotive qualification; suitable only for industrial/commercial use | Select when AEC-Q101 is not required and slightly higher RDS(on) is acceptable for cost-sensitive designs. |
| ON Semiconductor NTMFS5C673NL | RDS(on) = 11.5 mΩ @ 4.5 V; Qg = 11.3 nC; AEC-Q101 qualified; same PG-TSDSON-8 footprint | Pin-compatible drop-in replacement with marginally lower RDS(on) but higher gate charge | Prefer for new designs needing tighter RDS(on) tolerance; verify gate driver slew rate compatibility due to +13% Qg. |
Compared with STL220N3LLH6 and NTMFS5C673NL, BSC119N03S G offers the best balance of low gate charge (10 nC), AEC-Q101 compliance, and proven thermal performance in high-reliability automotive modules-making it optimal for safety-critical body electronics where driver loading and long-term stability are prioritized.
Availability
BSC119N03S G is available at Aetrix Electronics and suitable for automotive body control, industrial motor drives, server power supplies, and LED lighting systems requiring stable component supply across multi-year production cycles.
Supply support for BSC119N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
The OptiMOS™ TrenchMOS product line targets high-efficiency power conversion in automotive and industrial applications, emphasizing low RDS(on), fast switching, and ruggedness under real-world transients.
FAQ
What is the maximum allowable gate-source voltage for BSC119N03S G?
The absolute maximum VGS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 4.5 V logic-level drive, keep gate drive rails within 0–5 V with <±0.3 V overshoot; use Zener clamping if driving from higher-voltage sources.
Does BSC119N03S G require a gate resistor in typical switching applications?
Yes-a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. This prevents false turn-on during high dv/dt events and ensures controlled rise/fall times below 10 ns.
Can BSC119N03S G be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. The positive temperature coefficient of RDS(on) provides inherent current sharing above 100 °C junction temperature; however, gate drive impedance matching and Kelvin source routing are mandatory for stable parallel operation at >60 A total current.
Is the exposed drain pad electrically isolated from the internal die substrate?
No-the exposed pad is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net. Using it as a thermal-only pad without electrical connection violates the device's thermal model and may cause premature failure due to localized overheating.
BSC119N03S G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.9A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1370 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-1
BSC119N03S G FAQ
1.How can I place an order for BSC119N03S G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC119N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC119N03S G reliable?
The price and inventory of BSC119N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC119N03S G is usually 5 days.
3.What payment methods are accepted for BSC119N03S G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC119N03S G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC119N03S G?
BSC119N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC119N03S G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC119N03S G?
For technical support, including BSC119N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC119N03S G requirements.
6.How does Aetrix verify that BSC119N03S G is sourced from the original manufacturer or authorized distributors?
All BSC119N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC119N03S G meets industry standards.
7.What is the process for return or replacement of BSC119N03S G?
All BSC119N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC119N03S G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC119N03S G part is unused and in its original packaging.
Return procedure for BSC119N03S G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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