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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC130P03LSGAUMA1

Name: BSC130P03LSGAUMA1
Brand: Infineon Technologies
SKU: BSC130P03LSGAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC130P03LSGAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: BSC130P03LSGAUMA1.pdf

Description:: MOSFET P-CH 30V 12A/22.5A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC130P03LSGAUMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in PG-TDSON-8 package, rated for -30 V V_DS, 13 mΩ R_DS(on) at -10 V V_GS, -22.5 A continuous drain current, and 150 °C junction operation-designed for high-efficiency DC-DC power stages in notebook CPU/GPU VRMs.

For engineers reviewing the BSC130P03LSGAUMA1 datasheet, BSC130P03LSGAUMA1 pinout, BSC130P03LSGAUMA1 application, or BSC130P03LSGAUMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -2.2 to -1.5 V), low R_DS(on) with thermal robustness (R_thJC = 1.8 K/W), avalanche rating, and halogen-free RoHS-compliant construction.

Technical Context

This MOSFET operates in enhancement mode with negative gate control, enabling synchronous buck high-side or low-side switching in compact DC-DC converters. Its optimized charge profile (Q_g = 54.9–73.1 nC, Q_gd = 20.5–30.8 nC) supports fast turn-on/turn-off (t_r = 65.6–98.4 ns, t_f = 35.1–52.7 ns) while maintaining low switching losses under 1 MHz operation.

The device integrates an intrinsic body diode with V_SD = 0.9–1.2 V at -22.5 A and t_rr = 33 ns, supporting efficient freewheeling in synchronous rectification. Thermal design is enabled by its low junction-to-case resistance (1.8 K/W) and validated safe operating area up to -30 V and -90 A pulsed drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) max	13 mΩ at V_GS = -10 V, I_D = -22.5 A - Enables ≤2.9 W conduction loss at full load
I_D cont	-22.5 A at T_C = 25 °C - Supports high-current CPU core power delivery
Q_g	54.9–73.1 nC - Determines gate driver current requirement for <100 ns switching
R_thJC	1.8 K/W - Allows direct heatsinking to PCB copper for thermal management
V_GS(th)	-2.2 to -1.5 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drive
E_AS	22.5 mJ - Rated single-pulse avalanche energy for inductive load protection

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), RoHS-compliant, lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source connection; pins electrically tied internally for low-inductance return path
4, 8	Drain (Exposed Pad)	Main power output terminal; thermally and electrically connected to large copper area on PCB
8 (Pad)	Drain (Thermal Pad)	Primary thermal interface; must be soldered to ≥6 cm² copper pour for R_thJA = 50 K/W
8	Gate	Control input; requires low-impedance drive due to 3.8 Ω gate resistance and 55 nC total charge

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V controllers-eliminates need for gate boosters in portable VRMs
Avalanche-rated	Withstands 22.5 mJ single-pulse energy-enables reliable operation during inductive transients without external snubbers
Optimized switching charge ratio	Q_gd/Q_g ≈ 37–42% - Balances Miller immunity and switching speed for stable 500 kHz–1 MHz operation
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS - meets environmental requirements for notebook OEMs and industrial clients

Applications

High-Efficiency Notebook VRM

Industrial DC-DC Converter

Use Scenario: Core voltage regulation for Intel Core i7/i9 or AMD Ryzen mobile processors requiring <1 V output at >60 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2-phase interleaved buck converter, switching at 1 MHz.

Use Value: 13 mΩ R_DS(on) and 1.8 K/W R_thJC reduce conduction loss and enable compact thermal design without heatsinks.

Use Scenario: 24 V to 5 V isolated or non-isolated conversion in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology with bootstrap gate drive.

Use Value: -2.2 to -1.5 V V_GS(th) ensures reliable turn-on using standard 5 V microcontroller GPIO, reducing BOM count.

USB-C PD Power Delivery

Automotive Body Control Module

Use Scenario: 20 V input buck stage in USB-C PD 3.0 sink adapter delivering up to 100 W.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in fixed-frequency 300–500 kHz converter.

Use Value: Fast 33 ns reverse recovery and low Q_rr (24 nC) minimize body diode conduction loss and EMI during dead-time.

Use Scenario: Load switch for 12 V lighting or actuator control in automotive BCM with LIN bus interface.

IC Role / Device Role / Timing Role: High-side load switch with integrated overtemperature and short-circuit protection.

Use Value: 150 °C rated junction temperature and avalanche rating ensure reliability in under-hood environments up to 125 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7413TRPBF	R_DS(on) = 15 mΩ @ -10 V; Q_g = 42 nC; PG-TDSON-8 package	Higher conduction loss, lower gate charge - better for lower-current, higher-frequency apps	Prefer when gate drive strength is limited and thermal budget allows +0.25 W loss
DMG2305UVT-7	R_DS(on) = 42 mΩ @ -4.5 V; SOT-26 package; lower current rating (-4.2 A)	Smaller footprint but unsuitable for >10 A loads - used in auxiliary rails only	Select only for space-constrained auxiliary supplies where current ≤5 A

Compared with IRF7413TRPBF and DMG2305UVT-7, BSC130P03LSGAUMA1 delivers superior power density via lower R_DS(on) and higher current capability in the same PG-TDSON-8 footprint, making it optimal for primary VRM stages demanding <3 mΩ·cm² figure-of-merit.

Availability

BSC130P03LSGAUMA1 is available at Aetrix Electronics and suitable for notebook VRMs, industrial DC-DC converters, and USB-C PD power delivery systems requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for BSC130P03LSGAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™-P product line-engineered specifically for high-efficiency, high-current P-channel switching in space-constrained computing and portable power applications.

FAQ

What is the maximum allowable gate-source voltage for BSC130P03LSGAUMA1?

The absolute maximum V_GS is ±25 V per datasheet Rev. 1.04. Operation beyond ±20 V risks oxide degradation; recommended gate drive range is -10 V to 0 V for reliable enhancement and longevity. The device features integrated gate protection diodes and is qualified for 1 kV–2 kV HBM ESD robustness.

Can BSC130P03LSGAUMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increases with junction temperature) enables inherent current sharing. Parallel use requires matched layout symmetry, identical gate drive impedance, and shared thermal mass. Derate total current by 15% versus sum of individual ratings for safety margin.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 690–1000 pF) and PCB inductance. Without it, overshoot exceeding ±25 V V_GS may occur during fast switching, risking gate oxide failure-especially with high-speed drivers like UCC2753x or TC442x.

Is the exposed drain pad electrically isolated from other terminals?

No-the exposed drain pad (Pin 4/8) is electrically and thermally connected to the internal drain metallization. It must be soldered to a dedicated PCB copper pour tied to the system ground or power return plane. No insulation layer is required or permitted beneath the pad per PG-TDSON-8 mechanical spec.

BSC130P03LSGAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 22.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 73.1 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3670 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-3

BSC130P03LSGAUMA1 FAQ

1.How can I place an order for BSC130P03LSGAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC130P03LSGAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC130P03LSGAUMA1 reliable?

The price and inventory of BSC130P03LSGAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC130P03LSGAUMA1 is usually 5 days.

3.What payment methods are accepted for BSC130P03LSGAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC130P03LSGAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC130P03LSGAUMA1?

BSC130P03LSGAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC130P03LSGAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC130P03LSGAUMA1?

For technical support, including BSC130P03LSGAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC130P03LSGAUMA1 requirements.

6.How does Aetrix verify that BSC130P03LSGAUMA1 is sourced from the original manufacturer or authorized distributors?

All BSC130P03LSGAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC130P03LSGAUMA1 meets industry standards.

7.What is the process for return or replacement of BSC130P03LSGAUMA1?

All BSC130P03LSGAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC130P03LSGAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC130P03LSGAUMA1 part is unused and in its original packaging.

Return procedure for BSC130P03LSGAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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