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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC152N10NSFGATMA1

Name: BSC152N10NSFGATMA1
Brand: Infineon Technologies
SKU: BSC152N10NSFGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC152N10NSFGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC152N10NSFGATMA1.pdf

Description:: MOSFET N-CH 100V 9.4A/63A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC152N10NSFGATMA1 from Infineon Technologies is a 100 V, 15.2 mΩ (typ.) N-channel enhancement-mode MOSFET in PG-TSDSON-8 package, optimized for high-efficiency DC-DC conversion with 3.8 nC gate charge, 100% avalanche-rated capability, and qualified per AEC-Q101 for automotive applications.

For engineers reviewing the BSC152N10NSFGATMA1 datasheet, BSC152N10NSFGATMA1 pinout, BSC152N10NSFGATMA1 application, or BSC152N10NSFGATMA1 equivalent, key selection criteria include R_DS(on) at 10 V V_GS, pulsed drain current rating, thermal resistance (R_thJC = 3.4 K/W), gate threshold voltage range (1.0–2.5 V), and lead-free, halogen-free RoHS compliance.

Technical Context

This TrenchStop™ Superjunction MOSFET uses field-proven silicon technology to deliver low conduction and switching losses in compact surface-mount packaging. Its 100 V V_DS rating supports 48 V bus systems, while the 15.2 mΩ R_DS(on) enables high-current operation up to 80 A continuous drain current at T_C = 25 °C.

The device features fast switching characteristics (t_on = 12 ns, t_off = 24 ns), low gate charge (Q_g = 3.8 nC), and robust unclamped inductive switching (UIS) performance with E_AS = 70 mJ at T_J = 25 °C - critical for automotive power stages and industrial SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V nominal input systems with 2× safety margin for transients
R_DS(on) max @ V_GS = 10 V	17.5 mΩ - ensures ≤1.4 W conduction loss at 8 A DC load
I_D continuous @ T_C = 25 °C	80 A - enables high-power density buck converters without forced air cooling
Q_g	3.8 nC - reduces gate drive power and allows use with low-current drivers (e.g., UCC27531)
R_thJC	3.4 K/W - enables 60 °C junction rise over case at 20 W dissipation in standard PCB layout
E_AS	70 mJ @ T_J = 25 °C - sustains repetitive inductive turn-off stress in motor gate drivers and solenoid controls
V_GS(th)	1.0–2.5 V - compatible with 3.3 V logic-level microcontrollers and isolated gate drivers

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad on bottom).

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (D)	Internally connected to exposed thermal pad - must be soldered to large copper pour for thermal management
4	Source (S)	Low-side reference node; ties to ground plane in buck/boost topologies
8	Gate (G)	High-impedance control input; requires RC snubber (e.g., 10 Ω + 100 pF) to suppress ringing

Key Features

Feature	Design Value
Optimized for DC-DC conversion	Low Q_g/R_DS(on) ratio (0.25 nC/mΩ) minimizes total switching + conduction loss in 300–1000 kHz SMPS
AEC-Q101 qualified	Validated for automotive under-hood environments (T_A = −40 to +175 °C, humidity, vibration)
100% UIS tested	Guarantees single-pulse ruggedness up to 70 mJ - eliminates need for external clamping diodes
Thermally enhanced TSDSON	Exposed drain pad delivers 3.4 K/W R_thJC - outperforms SO-8 by >40% in thermal resistance

Applications

Automotive DC-DC Converter

Industrial Motor Gate Driver

Use Scenario: 12 V to 5 V/3.3 V point-of-load supply in ADAS camera modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter operating at 500 kHz.

Use Value: 15.2 mΩ R_DS(on) limits conduction loss to <0.5 W at 10 A, enabling passive cooling in sealed enclosures.

Use Scenario: Half-bridge high-side switch controlling 24 V BLDC motor phase current.

IC Role / Device Role / Timing Role: Fast-switching power stage with t_off = 24 ns and low Q_g for precise PWM timing control.

Use Value: 70 mJ E_AS withstands back-EMF spikes during commutation without snubber circuitry.

Server VRM Power Stage

Renewable Energy MPPT Controller

Use Scenario: Multiphase CPU core supply delivering up to 400 A at 0.8 V in datacenter servers.

IC Role / Device Role / Timing Role: Low-R_DS(on) phase-leg switch in interleaved buck topology.

Use Value: 80 A I_D rating and 3.4 K/W R_thJC support high-current density layouts with minimal thermal derating.

Use Scenario: DC-DC boost stage in solar microinverter converting 30–60 V PV input to 400 V DC bus.

IC Role / Device Role / Timing Role: Primary switch handling 100 V blocking and 15 A average current at 100 kHz.

Use Value: 100 V V_DS provides 2× margin over max PV open-circuit voltage, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL15DN10LHAG	R_DS(on) = 16.5 mΩ @ 10 V; Q_g = 4.2 nC; R_thJC = 4.0 K/W	Slightly higher conduction loss and thermal resistance - suitable where board space permits larger copper area	Prefer when ST ecosystem integration (e.g., STSPIN gate drivers) is required
ON Semiconductor NTMFS5C673NL	R_DS(on) = 14.5 mΩ @ 10 V; Q_g = 4.9 nC; no AEC-Q101 qualification	Lower R_DS(on) but higher gate charge increases driver loss; not automotive-qualified	Select for cost-sensitive industrial SMPS where automotive qualification is unnecessary

Compared with STL15DN10LHAG and NTMFS5C673NL, BSC152N10NSFGATMA1 offers the best balance of low R_DS(on), minimal Q_g, and AEC-Q101 validation - making it optimal for space-constrained, thermally demanding automotive and server power stages.

Availability

BSC152N10NSFGATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor gate drivers, and server VRM power stages requiring stable component supply and long-term lifecycle assurance.

Supply support for BSC152N10NSFGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's TrenchStop™ 5 Superjunction MOSFET product line, engineered for high-frequency, high-efficiency switching in automotive and industrial power conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, Infineon recommends limiting T_J to ≤150 °C under steady-state conditions. This requires maintaining R_thJA ≤ 25 K/W via adequate PCB copper area (≥10 cm² 2-oz copper) and ambient temperature ≤85 °C.

Is a gate resistor required, and what value is recommended?

Yes - a series gate resistor is mandatory to control dV/dt and prevent oscillation. For typical 500 kHz operation with 3.3 V logic-level drivers, a 10 Ω resistor is recommended. Higher values (e.g., 22 Ω) reduce EMI but increase switching losses; lower values (e.g., 4.7 Ω) improve efficiency but risk ringing.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V turn-off and +10 V turn-on. Negative gate voltage is not required or recommended. The V_GS rating is ±20 V, so applying −5 V offers no benefit and risks exceeding gate oxide stress limits during transient coupling.

Can BSC152N10NSFGATMA1 replace older TrenchStop IGBTs in existing designs?

Only with circuit revalidation. Unlike IGBTs, this MOSFET has no tail current and faster switching, which may cause voltage overshoot or shoot-through in legacy gate-drive layouts. Layout changes - including shorter gate traces, local decoupling, and updated dead-time settings - are required before substitution.

BSC152N10NSFGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC152N10NSFGATMA1 FAQ

1.How can I place an order for BSC152N10NSFGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC152N10NSFGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC152N10NSFGATMA1 reliable?

The price and inventory of BSC152N10NSFGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC152N10NSFGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC152N10NSFGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC152N10NSFGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC152N10NSFGATMA1?

BSC152N10NSFGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC152N10NSFGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC152N10NSFGATMA1?

For technical support, including BSC152N10NSFGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC152N10NSFGATMA1 requirements.

6.How does Aetrix verify that BSC152N10NSFGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC152N10NSFGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC152N10NSFGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC152N10NSFGATMA1?

All BSC152N10NSFGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC152N10NSFGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC152N10NSFGATMA1 part is unused and in its original packaging.

Return procedure for BSC152N10NSFGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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