Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC159N10LSFGATMA1

Name: BSC159N10LSFGATMA1
Brand: Infineon Technologies
SKU: BSC159N10LSFGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC159N10LSFGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC159N10LSFGATMA1.pdf

Description:: MOSFET N-CH 100V 9.4A/63A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,700

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC159N10LSFGATMA1 from Infineon Technologies is a 100 V, 15.9 mΩ (typ. @ V_GS = 10 V), N-channel enhancement-mode MOSFET in PG-TSDSON-8 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the BSC159N10LSFGATMA1 datasheet, BSC159N10LSFGATMA1 pinout, BSC159N10LSFGATMA1 application, or BSC159N10LSFGATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, gate charge (Q_g = 17 nC), thermal resistance (R_thJC = 1.4 K/W), and avalanche ruggedness (E_AS = 33 mJ).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring a trench-gate superjunction structure that enables low conduction loss while maintaining fast switching speed. It supports unclamped inductive switching (UIS) with guaranteed E_AS rating and operates with gate threshold voltage V_GS(th) between 1.8 V and 2.8 V.

The device is qualified per AEC-Q101 for industrial reliability and features a thermally enhanced TSDSON-8 package with exposed drain pad for low-junction-to-case thermal resistance. Its gate charge profile (Q_gs = 4.2 nC, Q_gd = 5.5 nC) supports efficient zero-voltage switching (ZVS) in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum drain-source blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) @ V_GS = 10 V	15.9 mΩ (typ.) - enables <1.6 W conduction loss at 10 A continuous drain current
Q_g	17 nC - supports <100 ns turn-on delay in 500 kHz–1 MHz synchronous buck converters
R_thJC	1.4 K/W - allows 3.5 W power dissipation at ΔT_JC = 5 K under PCB copper fill conditions
E_AS	33 mJ - rated single-pulse avalanche energy ensures robustness against transient overcurrents
V_GS(th)	1.8–2.8 V - compatible with 3.3 V and 5 V gate drivers without level-shifting
I_D (continuous)	42 A @ T_C = 25 °C - supports high-current output stages in multiphase VRMs

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), thermally enhanced with exposed drain pad on bottom side for direct PCB copper connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected to exposed metal pad - primary current path and thermal conduction path to PCB
5	Gate (G)	Control terminal requiring ≤17 nC charge for full enhancement; Miller plateau at ~2.5 V
6	Source (S)	Reference node for gate drive; tied to power ground plane in synchronous rectifier layout

Key Features

Feature	Design Value
OptiMOS™ 5 process	Enables 15.9 mΩ R_DS(on) at 100 V with <17 nC total gate charge for high-efficiency SMPS
Thermally optimized TSDSON-8	1.4 K/W R_thJC reduces junction temperature rise by >25% vs. standard SO-8 in same footprint
Avalanche-rated (E_AS)	33 mJ single-pulse rating eliminates need for external snubbers in hard-switched flyback designs
Low V_GS(th) spread	1.8–2.8 V range ensures consistent turn-on across temperature and production lots in digital control loops
Halogen-free & RoHS-compliant	Meets IPC-J-STD-609A Class 1 definition and EU Directive 2011/65/EU requirements

Applications

Server VRM Phase Legs

Telecom 48 V DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 15.9 mΩ R_DS(on) and 1.4 K/W thermal resistance reduce conduction loss and junction temperature rise by 12 °C vs. legacy 20 mΩ devices.

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V input to 12 V/5 V intermediate bus in base station power systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating in continuous conduction mode (CCM) with adaptive gate drive timing.

Use Value: Low Q_g (17 nC) and fast t_r/t_f (<20 ns) minimize switching losses during high-duty-cycle operation.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: Non-isolated buck regulator powering FPGA, I/O banks, and real-time controllers in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch in hot-swap or load-switch configuration with controlled inrush current.

Use Value: Guaranteed UIS capability (33 mJ) withstands inductive kickback from solenoid loads during fault events.

Use Scenario: Point-of-load (POL) converter supplying image sensor and radar SoC in 12 V automotive domain controller.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in compact 2-layer PCB design with limited thermal mass.

Use Value: Exposed drain pad enables direct thermal coupling to internal copper layers, reducing θ_JA by 18 K/W vs. SO-8 equivalents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(on) = 13.5 mΩ @ 10 V, Q_g = 21.5 nC, R_thJC = 1.6 K/W	Higher gate charge increases switching loss in >600 kHz designs; slightly better conduction loss at high I_D	Select when lowest R_DS(on) dominates over switching frequency constraints
IRF7759L2TRPBF	R_DS(on) = 17.5 mΩ @ 10 V, Q_g = 14.5 nC, R_thJC = 1.8 K/W, TO-252 package	Larger footprint and higher thermal resistance limit use in space-constrained POLs; lower Q_g benefits ZVS designs	Select when board area permits DPAK and gate drive strength is limited

Compared with STL130N10F7 and IRF7759L2TRPBF, BSC159N10LSFGATMA1 delivers optimal balance of conduction loss, switching speed, and thermal performance in compact 3.3×3.3 mm layouts-critical for multi-phase VRMs where per-phase current density exceeds 15 A/mm².

Availability

BSC159N10LSFGATMA1 is available at Aetrix Electronics and suitable for server VRM phase legs, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.

Supply support for BSC159N10LSFGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial power supplies where R_DS(on), Q_g, and thermal performance are co-optimized.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The BSC159N10LSFGATMA1 supports 25 A continuous drain current at case temperature of 100 °C, derated from 42 A at 25 °C using its specified thermal resistance (R_thJC = 1.4 K/W) and maximum junction temperature (T_J = 150 °C). This rating assumes adequate PCB copper area for heat spreading.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage range of 1.8–2.8 V and exhibits no parasitic turn-on under typical 0 V to 12 V gate drive. Negative gate bias is not required; however, a 0 V gate return (not floating) is mandatory during off-state to prevent spurious conduction from capacitive coupling.

Is the PG-TSDSON-8 package lead-free and RoHS-compliant?

Yes. The BSC159N10LSFGATMA1 uses lead-free solderable terminations and complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH without dry pack requirements.

Can this MOSFET be used in linear (analog) regulation mode?

No. It is not characterized or qualified for linear-mode operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 10 A at V_DS > 20 V due to thermal instability. Use only in switched-mode applications with defined duty cycle and heatsinking per datasheet SOA limits.

BSC159N10LSFGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC159N10LSFGATMA1 FAQ

1.How can I place an order for BSC159N10LSFGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC159N10LSFGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC159N10LSFGATMA1 reliable?

The price and inventory of BSC159N10LSFGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC159N10LSFGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC159N10LSFGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC159N10LSFGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC159N10LSFGATMA1?

BSC159N10LSFGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC159N10LSFGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC159N10LSFGATMA1?

For technical support, including BSC159N10LSFGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC159N10LSFGATMA1 requirements.

6.How does Aetrix verify that BSC159N10LSFGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC159N10LSFGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC159N10LSFGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC159N10LSFGATMA1?

All BSC159N10LSFGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC159N10LSFGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC159N10LSFGATMA1 part is unused and in its original packaging.

Return procedure for BSC159N10LSFGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…