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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC200P03LSG

Name: BSC200P03LSG
Brand: Infineon Technologies
SKU: BSC200P03LSG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC200P03LSG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC200P03LSG.pdf

Description:: P-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC200P03LSG from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in PG-TDSON-8 package, rated for -30 V V_DS, 20 mΩ R_DS(on) at V_GS = -10 V, and -12.5 A continuous drain current at T_C = 70 °C. It features avalanche rating, 150 °C operation, and is optimized for notebook power management circuits including battery protection and load switching.

For engineers reviewing the BSC200P03LSG datasheet, BSC200P03LSG pinout, BSC200P03LSG application, or BSC200P03LSG equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -2.2 to -1.5 V), low thermal resistance (R_thJC = 2 K/W), and integrated reverse diode with t_rr = 22 ns and Q_rr = 11 nC - critical for synchronous buck and OR-ing designs.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage enabling direct interface with 3.3 V or 5 V logic controllers. Its PG-TDSON-8 package provides low-inductance source connections and high-current capability via exposed drain pad.

The device supports unclamped inductive switching with single-pulse E_AS = 63 mJ and exhibits dynamic parameters including C_iss = 2430 pF, C_oss = 757 pF, and Q_g = 48.5 nC, making it suitable for medium-frequency DC-DC conversion up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - maximum blocking voltage for low-voltage P-channel high-side switch applications
R_DS(on) max	20 mΩ at V_GS = -10 V, I_D = -12.5 A - enables <1.5 W conduction loss at full rated current
I_D cont	-12.5 A at T_C = 70 °C - supports compact thermal design with minimal heatsinking
V_GS(th)	-2.2 to -1.5 V - ensures reliable turn-on with standard logic-level drivers
E_AS	63 mJ - withstands energy from inductive load transients without failure
t_rr	22 ns - minimizes body diode recovery losses in synchronous rectification
R_thJC	2 K/W - enables efficient heat transfer from junction to case in high-power density layouts

Pinout & Package

PG-TDSON-8 is a surface-mount, thermally enhanced 8-pin package with exposed drain pad on bottom for low thermal resistance and high-current handling. Pin 1–8 are arranged in two rows (4+4), with pins 1–4 on left side and 5–8 on right side when viewed top-down with marking visible.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (internally connected)	Common high-current path to PCB copper area; requires soldered thermal pad for R_thJC spec compliance
5	Source	Main current return node; low-inductance connection critical for switching stability
G	Gate	Control terminal requiring <48.5 nC total charge; sensitive to ESD (Class 1B, 500 V–1 kV)

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ -1.5 V enables direct control from 3.3 V microcontrollers without level-shifting
Avalanche-rated	63 mJ single-pulse E_AS allows robust operation in inductive load switching without external snubbers
Thermally optimized package	R_thJC = 2 K/W supports >90% of rated power dissipation through case-to-heatsink path
Fast body diode	t_rr = 22 ns and Q_rr = 11 nC reduce cross-conduction losses in synchronous buck topologies
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive - suitable for consumer notebook manufacturing

Applications

Notebook Battery Protection

Synchronous Buck Converter High-Side Switch

Use Scenario: Reverse current blocking and overcurrent shutdown during battery charging/discharging cycles in ultrabook platforms.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling battery connection to system bus.

Use Value: Low R_DS(on) (20 mΩ) limits voltage drop and self-heating; logic-level gate enables direct MCU GPIO control.

Use Scenario: High-side switch in 5 V → 3.3 V/1.8 V point-of-load converters powering CPU cores and memory subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for high-efficiency DC-DC regulation.

Use Value: Fast t_rr (22 ns) and low Q_rr (11 nC) minimize shoot-through risk and improve light-load efficiency.

Hot-Swap OR-ing Circuit

USB Power Delivery Load Switch

Use Scenario: Redundant power rail selection in dual-battery or AC/DC + battery systems with seamless switchover.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET configured as ideal diode controller element.

Use Value: Avalanche rating (63 mJ) absorbs transient energy during rail switching; low V_GS(th) ensures fast turn-on response.

Use Scenario: USB-C port power path control with overcurrent and short-circuit protection in portable docking stations.

IC Role / Device Role / Timing Role: Load switch isolating downstream USB PD sink from upstream source during fault conditions.

Use Value: -30 V V_DS rating accommodates 20 V PD3.0 input; R_DS(on) stability over temperature ensures consistent current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	V_DS = -20 V, R_DS(on) = 30 mΩ @ V_GS = -4.5 V, SOT-23 package	Limited to lower-voltage (<20 V) systems; unsuitable for 24 V or dual-battery notebook rails	Select only for space-constrained 3.3 V/5 V logic interfaces where -20 V rating suffices
DMG2305UVT-7	V_DS = -20 V, R_DS(on) = 42 mΩ @ V_GS = -4.5 V, SOT-563 package	Higher R_DS(on) increases conduction loss; no avalanche rating specified	Acceptable for low-current (<3 A) load switching where thermal margin is ample and transients are suppressed

Compared with IRLML6344TRPBF and DMG2305UVT-7, BSC200P03LSG delivers higher voltage rating (-30 V), lower on-resistance (20 mΩ), and guaranteed avalanche ruggedness - essential for unregulated battery inputs and inductive load switching in premium notebooks.

Availability

BSC200P03LSG is available at Aetrix Electronics and suitable for notebook battery protection, synchronous buck converter high-side switching, and hot-swap OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for BSC200P03LSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification standards.

BSC200P03LSG belongs to the OptiMOS™-P family, engineered specifically for high-efficiency, logic-level-controlled P-channel switching in portable computing and power-dense DC-DC applications.

FAQ

What is the maximum safe operating temperature for BSC200P03LSG?

The device is rated for continuous operation up to T_j = 150 °C, with thermal derating applied above T_C = 70 °C. The SOA curve (Rev. 1.04, page 4) defines safe voltage-current boundaries at elevated temperatures, and R_thJC = 2 K/W enables effective heatsinking to maintain junction temperature within limit under sustained -12.5 A load.

Does BSC200P03LSG require a gate driver IC for 3.3 V MCU control?

No - its V_GS(th) range of -2.2 V to -1.5 V ensures full enhancement with 3.3 V logic outputs. At V_GS = -3.3 V, R_DS(on) rises to ~35 mΩ (per Fig. 9), which remains acceptable for moderate-current loads; gate charge of 48.5 nC is manageable by typical GPIOs with proper layout.

Can BSC200P03LSG replace an N-channel MOSFET in high-side switching?

Yes - as a P-channel device, it simplifies high-side switching by eliminating the need for a floating gate driver. However, its R_DS(on) is inherently higher than comparable N-channel parts; use is justified where gate drive simplicity, logic-level compatibility, and integrated diode recovery performance outweigh on-resistance penalties.

Is the PG-TDSON-8 package lead-free and RoHS-compliant?

Yes - the part marking "Yes" under "Lead free" and compliance with IEC61249-2-21 and RoHS Directive confirm Pb-free lead plating and halogen-free construction. The package uses standard SnAgCu solder paste profiles compatible with IPC-J-STD-020D reflow guidelines for moisture sensitivity level 1.

BSC200P03LSG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Ta), 12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 48.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC200P03LSG FAQ

1.How can I place an order for BSC200P03LSG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC200P03LSG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC200P03LSG reliable?

The price and inventory of BSC200P03LSG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC200P03LSG is usually 5 days.

3.What payment methods are accepted for BSC200P03LSG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC200P03LSG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC200P03LSG?

BSC200P03LSG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC200P03LSG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC200P03LSG?

For technical support, including BSC200P03LSG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC200P03LSG requirements.

6.How does Aetrix verify that BSC200P03LSG is sourced from the original manufacturer or authorized distributors?

All BSC200P03LSG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC200P03LSG meets industry standards.

7.What is the process for return or replacement of BSC200P03LSG?

All BSC200P03LSG units undergo pre-shipment inspection (PSI). If there is an issue with BSC200P03LSG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC200P03LSG part is unused and in its original packaging.

Return procedure for BSC200P03LSG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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