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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC200P03LSGAUMA1

Name: BSC200P03LSGAUMA1
Brand: Infineon Technologies
SKU: BSC200P03LSGAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC200P03LSGAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC200P03LSGAUMA1.pdf

Description:: MOSFET P-CH 30V 9.9/12.5A 8TDSON

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Product details

Overview

BSC200P03LSGAUMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in PG-TDSON-8 package, rated for -30 V V_DS, 20 mΩ R_DS(on) at -10 V V_GS, -12.5 A continuous drain current, and 150 °C operation-designed for high-efficiency synchronous buck converters in notebook power management.

For engineers reviewing the BSC200P03LSGAUMA1 datasheet, BSC200P03LSGAUMA1 pinout, BSC200P03LSGAUMA1 application, or BSC200P03LSGAUMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = -2.2 to -1.5 V), low R_DS(on) for reduced conduction loss, avalanche ruggedness, and thermal resistance of 2 K/W (junction-to-case).

Technical Context

This MOSFET operates as a high-side or low-side switch in DC-DC conversion stages where fast switching, low gate charge (Q_g = 36.4–48.5 nC), and robust body diode recovery (t_rr = 22 ns, Q_rr = 11 nC) are critical. Its optimized capacitance profile (C_iss = 1830–2430 pF, C_rss = 460–690 pF) supports stable operation under hard-switching conditions.

The device features an integrated avalanche-rated structure with E_AS = 63 mJ (I_D = -12.5 A, R_GS = 25 Ω), enabling reliable operation during transient overvoltage events. Its halogen-free, RoHS-compliant construction and 2 K/W junction-to-case thermal resistance support compact thermal design in space-constrained notebook PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) max	20 mΩ at V_GS = -10 V - Enables ≤1.5 W conduction loss at -12.5 A continuous current
I_D cont	-12.5 A at T_C = 25 °C - Supports high-current load switches in CPU/GPU VRMs
Q_g	36.4–48.5 nC - Determines gate driver strength requirement for <50 ns turn-on/turn-off times
t_rr	22 ns - Minimizes reverse recovery loss in synchronous rectification topologies
R_thJC	2 K/W - Allows direct heatsinking via exposed drain pad for thermal management
V_GS(th)	-2.2 to -1.5 V - Ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.05 mm height), RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Power Drain / Thermal Sink	Internally connected copper area forming primary current path and thermal interface to PCB
Source (pins 1–3, 5–7)	Source Terminal	Low-impedance source connection for return path; pins grouped for current sharing
Gate (pin 4)	Control Input	Single-point gate connection optimized for low-inductance layout and minimal ringing

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) down to -1.5 V enables direct interfacing with 3.3 V microcontrollers and PWM controllers
Avalanche-rated	E_AS = 63 mJ ensures survivability during inductive switching transients without external snubbers
Optimized switching charge	Q_gd/Q_g ratio ≈ 0.42 supports clean Miller plateau control and reduced shoot-through risk
Thermally enhanced package	Exposed drain pad delivers 2 K/W R_thJC, enabling >90% of heat to transfer directly to PCB copper
Fast body diode	t_rr = 22 ns and Q_rr = 11 nC reduce cross-conduction losses in synchronous buck topologies

Applications

High-Efficiency Notebook VRM

Synchronous Buck Converter

Use Scenario: Primary high-side switch in 12 V → 1.2 V CPU core VRM on ultra-thin notebook motherboards.

IC Role / Device Role / Timing Role: High-side power switch operating at 300–500 kHz with precise duty-cycle control.

Use Value: 20 mΩ R_DS(on) and 22 ns t_rr reduce total power loss by ≥15% vs. standard P-channel alternatives.

Use Scenario: Low-side synchronous rectifier in 19 V adapter-to-5 V USB-PD secondary-side regulation.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling switch replacing Schottky diode in continuous conduction mode.

Use Value: Integrated body diode with Q_rr = 11 nC eliminates external diode and reduces board area by 30%.

Hot-Swap Protection Circuit

Load Switch for SSD Power Rail

Use Scenario: Inrush current limiter and fault protection switch for PCIe add-in card hot-plug slots.

IC Role / Device Role / Timing Role: Controlled turn-on switch with soft-start capability enabled by gate charge profile.

Use Value: Avalanche rating (E_AS = 63 mJ) withstands repeated 12 V bus transients during insertion events.

Use Scenario: Power enable switch for NVMe SSD 3.3 V auxiliary rail in ultrabook storage subsystems.

IC Role / Device Role / Timing Role: Logic-level controlled load disconnect with fast turn-off (<50 ns fall time).

Use Value: -2.2 V V_GS(th) ensures full turn-on with 3.3 V GPIO, eliminating level-shifter requirement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7425PBF	R_DS(on) = 28 mΩ @ -10 V; Q_g = 34 nC; PG-TO252-3 package	Higher R_DS(on) increases conduction loss by ~40%; larger package limits board density	Preferred only when TO-252 footprint compatibility is mandatory and thermal budget allows
SI2301DS-T1-BE3	R_DS(on) = 115 mΩ @ -4.5 V; SOT-23 package; I_D = -2.6 A	Not suitable for >3 A loads; lacks avalanche rating and thermal performance for VRM use	Only viable for low-power always-on rails (e.g., RTC backup), not main power switches

Compared with IRF7425PBF and SI2301DS-T1-BE3, BSC200P03LSGAUMA1 delivers superior power density (20 mΩ in 5×6 mm), guaranteed avalanche ruggedness, and lower gate drive demand-making it uniquely suited for high-current, thermally constrained notebook VRMs.

Availability

BSC200P03LSGAUMA1 is available at Aetrix Electronics and suitable for notebook VRMs, synchronous buck converters, hot-swap protection circuits, and SSD load switches requiring stable component supply and long-term industrial availability.

Supply support for BSC200P03LSGAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™-P family-engineered specifically for high-efficiency, high-density P-channel switching in portable computing power supplies, emphasizing low R_DS(on), fast switching, and robust thermal behavior.

FAQ

Is BSC200P03LSGAUMA1 suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from -2.2 V to -1.5 V and R_DS(on) = 20 mΩ specified at -10 V, the device achieves full enhancement at 3.3 V gate drive-delivering R_DS(on) ≈ 35–40 mΩ, sufficient for moderate-current load switches and always-on rails in notebooks.

What is the maximum PCB copper area required for thermal compliance at 12.5 A?

For continuous 12.5 A operation at T_J ≤ 150 °C, a minimum 6 cm² of 70 µm thick copper on FR4 (single layer, vertical orientation) is required per the datasheet's R_thJA = 50 K/W condition. The exposed drain pad must be fully soldered to this area for optimal heat transfer.

Does BSC200P03LSGAUMA1 have integrated ESD protection?

Yes. It is rated ESD Class 1B per JESD22-A114-HBM (500 V–1 kV), providing basic handling robustness. However, system-level ESD protection (e.g., TVS diodes) remains recommended for I/O-facing applications such as hot-swap interfaces.

Can this MOSFET replace an N-channel device in a high-side configuration?

No-it is a P-channel device designed for high-side switching without bootstrap circuitry. Replacing an N-channel high-side switch would require redesigning gate drive topology; its advantage lies in eliminating the need for floating gate drivers, not in functional equivalence to N-channel parts.

BSC200P03LSGAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9.9A (Ta), 12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 48.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC200P03LSGAUMA1 FAQ

1.How can I place an order for BSC200P03LSGAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC200P03LSGAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC200P03LSGAUMA1 reliable?

The price and inventory of BSC200P03LSGAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC200P03LSGAUMA1 is usually 5 days.

3.What payment methods are accepted for BSC200P03LSGAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC200P03LSGAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC200P03LSGAUMA1?

BSC200P03LSGAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC200P03LSGAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC200P03LSGAUMA1?

For technical support, including BSC200P03LSGAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC200P03LSGAUMA1 requirements.

6.How does Aetrix verify that BSC200P03LSGAUMA1 is sourced from the original manufacturer or authorized distributors?

All BSC200P03LSGAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC200P03LSGAUMA1 meets industry standards.

7.What is the process for return or replacement of BSC200P03LSGAUMA1?

All BSC200P03LSGAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC200P03LSGAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC200P03LSGAUMA1 part is unused and in its original packaging.

Return procedure for BSC200P03LSGAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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