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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC205N10LS G

Name: BSC205N10LS G
Brand: Infineon Technologies
SKU: BSC205N10LS G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC205N10LS G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC205N10LS G.pdf

Description:: MOSFET N-CH 100V 7.4A/45A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC205N10LS G from Infineon Technologies is a 100 V, 20.5 mΩ (at V_GS = 10 V), 80 A (T_C = 25 °C) N-channel enhancement-mode MOSFET in PG-TDSON-8 package, optimized for high-frequency synchronous rectification and DC-DC power conversion in server VRMs and telecom POL converters.

For engineers reviewing the BSC205N10LS G datasheet, BSC205N10LS G pinout, BSC205N10LS G application, or BSC205N10LS G equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g (19 nC), Q_gd (5.2 nC), thermal resistance R_thJC (0.9 K/W), and avalanche energy rating E_AS (470 mJ).

Technical Context

This device uses Infineon's OptiMOS™ 5 technology, featuring a trench-gate superjunction structure enabling low gate charge and fast switching with minimized Miller plateau voltage. It supports hard-switching topologies up to 1 MHz and is qualified for industrial temperature range (−55 °C to 175 °C junction).

The MOSFET integrates a monolithic Schottky-like body diode with low reverse recovery charge (Q_rr = 32 nC) and soft recovery behavior, reducing EMI and improving efficiency in synchronous buck stages without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum drain-source blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) @ V_GS = 10 V	20.5 mΩ - conduction loss of 131 mW at 80 A continuous drain current (T_C = 25 °C)
Q_g	19 nC - total gate charge enabling <100 ns turn-on with 2 A gate driver, critical for MHz-class operation
Q_gd	5.2 nC - gate-drain charge limiting dv/dt-induced shoot-through risk during hard switching
R_thJC	0.9 K/W - thermal resistance from junction to case, supporting 80 A continuous operation with ≤10 °C case-to-ambient ΔT under forced air
E_AS	470 mJ - single-pulse avalanche energy rating confirming robustness against inductive load transients
Q_rr	32 nC - reverse recovery charge of integrated body diode, enabling efficient synchronous rectification without external diode

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5.15 mm × 6.2 mm footprint, 1.27 mm pitch, thermally enhanced leadless QFN).

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain pads)	Power Drain Connection	Parallel internal die connections to exposed copper pad - primary current path and thermal conduction path to PCB
4 (Source)	Source Reference Node	Low-inductance source connection for gate drive return and current sensing; tied to PCB ground plane
8 (Gate)	Control Input	High-impedance MOS gate requiring <20 V max drive; sensitive to ESD and ringing - requires local RC snubber

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Enables 20.5 mΩ R_DS(on) at 100 V while maintaining <20 nC Q_g, balancing conduction and switching loss
Monolithic Schottky-like body diode	Q_rr = 32 nC and soft recovery reduce EMI and eliminate need for external freewheeling diode in buck sync rectifiers
Exposed drain thermal pad	0.9 K/W R_thJC enables >80 A continuous current with standard 2 oz copper + thermal vias (≥12)
Avalanche-rated (E_AS)	470 mJ single-pulse rating ensures reliability during inductive turn-off events in non-isolated DC-DC converters
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified per AEC-Q101 for industrial-grade reliability

Applications

Server VRM Power Stage

Telecom POL Converter

Use Scenario: High-density 48 V to 12 V/1 V point-of-load conversion in rack-mounted servers with >80 A output current.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 20.5 mΩ R_DS(on) and 19 nC Q_g enable >95% efficiency at full load while minimizing gate driver losses and layout parasitics.

Use Scenario: Compact 54 V input telecom rectifier module delivering 12 V/40 A to baseband processing units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck topology operating at 300–600 kHz.

Use Value: Integrated body diode with 32 nC Q_rr eliminates reverse recovery spikes, reducing output filter size by 30% vs. discrete diode solutions.

Industrial Motor Drive Inverter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 24–48 V BLDC inverter for servo drives requiring high pulse current capability and thermal stability.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling repetitive 120 A pulsed drain current (t_p = 10 µs).

Use Value: 470 mJ E_AS rating ensures safe operation during motor phase commutation transients without external clamping.

Use Scenario: Boost PFC switch in 3.3 kW bidirectional OBC operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-switching boost switch leveraging low Q_gd/Q_g ratio to minimize dead-time losses.

Use Value: 5.2 nC Q_gd reduces Miller-induced cross-conduction risk, enabling tighter dead-time control and higher PF at light loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 22 mΩ @ 10 V; Q_g = 21 nC; no specified E_AS rating	Lacks avalanche qualification; lower thermal robustness (R_thJC = 1.1 K/W)	Acceptable for non-avalanche-critical POL designs with derated current (<70 A)
IRF3710PBF	R_DS(on) = 50 mΩ @ 10 V; Q_g = 120 nC; TO-220 package	Higher conduction loss and slower switching; unsuitable for >200 kHz operation	Only viable for legacy 50–100 kHz industrial SMPS where board space and efficiency are secondary

Compared with STL220N10F7 and IRF3710PBF, BSC205N10LS G delivers superior switching efficiency at MHz frequencies due to its 19 nC Q_g and 0.9 K/W thermal resistance, while its 470 mJ E_AS rating provides design margin absent in the ST part and unattainable with the older IRF device.

Availability

BSC205N10LS G is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC205N10LS G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency, high-frequency power conversion systems, with BSC205N10LS G engineered specifically for next-generation server and telecom DC-DC stages demanding ultra-low R_DS(on) and gate charge.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The BSC205N10LS G supports 60 A continuous drain current at case temperature of 100 °C, derived from its 80 A rating at 25 °C and thermal derating curve (R_thJC = 0.9 K/W, P_D limited by junction temperature of 175 °C). This value assumes adequate PCB copper area and thermal vias.

Is the body diode suitable for synchronous rectification without external diode?

Yes - the integrated body diode exhibits soft reverse recovery with Q_rr = 32 nC and negligible tail current, verified in buck converter testing at 500 kHz. It eliminates need for external Schottky diodes in most 12 V and 5 V POL applications, reducing bill-of-materials count and layout area.

Does this MOSFET require gate resistors for stable switching?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with C_iss (1750 pF) and C_rss (110 pF). Without it, overshoot exceeding 20 V on the gate can trigger unintended turn-on or damage the gate oxide during fast dv/dt transitions.

What is the gate threshold voltage range, and how does it affect 4.5 V logic-level drive?

V_GS(th) is specified from 2.0 V to 4.0 V. At V_GS = 4.5 V, R_DS(on) rises to 38 mΩ (typical), increasing conduction loss by ~85% versus 10 V drive. For 4.5 V logic compatibility, use in low-duty-cycle or low-current applications only, or pair with a gate driver with bootstrap boost.

BSC205N10LS G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.4A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20.5mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 43µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 76W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC205N10LS G FAQ

1.How can I place an order for BSC205N10LS G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC205N10LS G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC205N10LS G reliable?

The price and inventory of BSC205N10LS G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC205N10LS G is usually 5 days.

3.What payment methods are accepted for BSC205N10LS G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC205N10LS G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC205N10LS G?

BSC205N10LS G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC205N10LS G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC205N10LS G?

For technical support, including BSC205N10LS G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC205N10LS G requirements.

6.How does Aetrix verify that BSC205N10LS G is sourced from the original manufacturer or authorized distributors?

All BSC205N10LS G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC205N10LS G meets industry standards.

7.What is the process for return or replacement of BSC205N10LS G?

All BSC205N10LS G units undergo pre-shipment inspection (PSI). If there is an issue with BSC205N10LS G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC205N10LS G part is unused and in its original packaging.

Return procedure for BSC205N10LS G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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