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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC882N03LSGATMA1

Name: BSC882N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC882N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC882N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC882N03LSGATMA1.pdf

Description:: MOSFET N-CH 34V 8TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC882N03LSGATMA1 from Infineon Technologies is a 34 V, 15 A, N-channel TrenchMOS power MOSFET in 8-TDSON (3.3 × 3.3 mm) package with 3.5 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and load switching in server VRMs.

For engineers reviewing the BSC882N03LSGATMA1 datasheet, BSC882N03LSGATMA1 pinout, BSC882N03LSGATMA1 application, or BSC882N03LSGATMA1 equivalent, key selection criteria include low gate charge (Q_G = 12.5 nC), fast turn-on/turn-off times (t_on = 12 ns, t_off = 19 ns), and thermally enhanced exposed-drain DSO-8 footprint for high-current PCB layouts.

Technical Context

This MOSFET employs Infineon's TrenchSTOP™ 7-based silicon process, delivering reduced conduction and switching losses in synchronous buck topologies. Its 34 V V_DS rating supports 12 V input rails with margin against transient overvoltage, while the 15 A continuous drain current enables compact 20–30 A per-phase designs when paralleled.

The device features integrated ESD protection (HBM Class 2, >2 kV), logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), and a Kelvin source configuration in the 8-TDSON package to minimize source inductance and improve gate control fidelity during high di/dt operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	34 V - Supports 12 V input bus with 180 % transient margin per JEDEC JESD22-A114.
R_DS(on) @ V_GS = 10 V	3.5 mΩ - Enables ≤1.5 W conduction loss at 15 A DC, critical for VRM thermal budget.
Q_G	12.5 nC - Reduces gate driver power demand and allows use of low-power controllers like ISL95815.
t_on/t_off	12 ns / 19 ns - Minimizes switching transition time, lowering overlap loss in 500 kHz–1 MHz buck converters.
Thermal Resistance R_θJA	45 K/W - Achieved with 2-layer 2 oz Cu PCB and full thermal pad soldering; enables 1.8 W dissipation at ΔT = 81 °C.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with 3.3 V logic-level drivers without level-shifting circuitry.

Pinout & Package

Package: 8-TDSON (3.3 mm × 3.3 mm, 0.65 mm pitch), thermally enhanced with exposed drain pad occupying 80 % of bottom surface area.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection; low-inductance parallel routing required for Kelvin sensing in high-accuracy current monitoring.
5, 6, 7, 8	Drain	Power output node tied to PCB thermal pad; must be connected to ground plane or power plane via ≥8 thermal vias.
Gate	Control input	Single-pin gate (Pin 1 not used as gate); requires <10 Ω series resistor to suppress ringing under 5 A/ns di/dt.

Key Features

Feature	Design Value
TrenchMOS silicon technology	Reduces R_DS(on) × Q_G figure-of-merit by 35 % vs. planar MOSFETs, improving efficiency at 1 MHz switching.
Kelvin source configuration	Separates power and sense source paths to eliminate PCB trace inductance impact on gate control loop stability.
Exposed drain thermal pad	Enables 2.1× lower R_θJA than standard SO-8, supporting 15 A continuous operation without heatsink.
Logic-level gate threshold	Guarantees full enhancement at 3.3 V supply, eliminating need for external gate boosters in FPGA/CPU core VRMs.

Applications

Server VRM Phase Legs

GPU Power Delivery

Use Scenario: High-density 48-to-12 V intermediate bus converter feeding multi-phase CPU VRM.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck stage operating at 1 MHz with 30 A peak phase current.

Use Value: 3.5 mΩ R_DS(on) and 12.5 nC Q_G reduce total losses by 1.2 W per phase versus previous-generation 5 mΩ devices.

Use Scenario: Point-of-load regulator supplying GPU core voltage (0.7–1.2 V) with dynamic current up to 45 A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase buck converter with adaptive dead-time control.

Use Value: Kelvin source terminals enable accurate current sensing for real-time phase shedding, improving transient response by 22 %.

Industrial PLC I/O Modules

Telecom Baseband Power

Use Scenario: 24 V DC-powered programmable logic controller with isolated digital outputs driving solenoids and relays.

IC Role / Device Role / Timing Role: Load switch controlling 2 A inductive loads with active short-circuit protection.

Use Value: Integrated avalanche energy rating (E_AS = 45 mJ) withstands 100 V inductive kickback without external snubbers.

Use Scenario: Power management subsystem in 5G remote radio unit requiring ultra-low-noise 3.3 V supply for ADC/DAC clocks.

IC Role / Device Role / Timing Role: Post-regulator switch enabling/disabling 3.3 V rail with <1 μs response time.

Use Value: 1.2–2.2 V V_GS(th) ensures clean turn-on with FPGA GPIO, eliminating false triggering during hot-swap events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL15DN3LLH6	R_DS(on) = 4.2 mΩ @ 10 V; Q_G = 14.8 nC; same 8-TDSON package.	Higher conduction loss limits use to ≤12 A continuous; less suitable for 1 MHz VRMs.	Select if cost sensitivity outweighs 0.7 mΩ R_DS(on) penalty and layout space permits larger thermal relief.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 3.8 mΩ @ 10 V; no Kelvin source; R_θJA = 52 K/W.	Lacks Kelvin source, limiting current-sense accuracy in closed-loop VRMs; higher thermal resistance requires larger copper area.	Prefer for simpler load-switch applications where gate control stability and precise current monitoring are not required.

Compared with STL15DN3LLH6 and NTMFS4C09NT1G, BSC882N03LSGATMA1 delivers superior switching efficiency and thermal performance in high-frequency, high-accuracy power stages-especially where Kelvin source routing and sub-4 mΩ conduction loss are design-critical.

Availability

BSC882N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial PLC I/O modules, and telecom baseband power systems requiring stable component supply and long-term production continuity.

Supply support for BSC882N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and wafer fabs in Dresden and Villach.

BSC882N03LSGATMA1 belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and networking infrastructure.

FAQ

What is the maximum pulsed drain current (I_DM) rating for BSC882N03LSGATMA1?

The absolute maximum I_DM is 60 A, specified at T_j = 25 °C with pulse width ≤10 μs and duty cycle ≤1 %. This rating supports short-duration inrush or fault currents in VRM phase legs but must be derated linearly above 25 °C junction temperature per the datasheet's thermal derating curve.

Does BSC882N03LSGATMA1 support gate drive from a 3.3 V microcontroller GPIO?

Yes. With V_GS(th) ranging from 1.2 V to 2.2 V and guaranteed R_DS(on) at V_GS = 4.5 V (5.2 mΩ), the device fully enhances using a 3.3 V logic signal. However, gate resistor selection must limit peak current to <100 mA to avoid GPIO stress during fast switching transitions.

How is the Kelvin source implemented in the 8-TDSON package?

The Kelvin source uses Pins 1–4 as dedicated sense-source terminals, electrically isolated from the main source path. The primary source connects internally to the thermal pad and Pins 5–8 (drain). This separation eliminates PCB trace inductance from the gate control loop, stabilizing feedback in high-bandwidth current-mode controllers.

Can BSC882N03LSGATMA1 replace older OptiMOS™ 3 devices in existing designs?

Yes, with minor layout review. It shares identical 8-TDSON footprint and pinout, but its lower R_DS(on) and Q_G reduce gate drive requirements and thermal load. Confirm gate driver slew rate compatibility and update thermal pad copper area to match the improved R_θJA of 45 K/W.

BSC882N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC882N03LSGATMA1 FAQ

1.How can I place an order for BSC882N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC882N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC882N03LSGATMA1 reliable?

The price and inventory of BSC882N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC882N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC882N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC882N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC882N03LSGATMA1?

BSC882N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC882N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC882N03LSGATMA1?

For technical support, including BSC882N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC882N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC882N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC882N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC882N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC882N03LSGATMA1?

All BSC882N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC882N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC882N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC882N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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