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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC882N03MSG

Name: BSC882N03MSG
Brand: Infineon Technologies
SKU: BSC882N03MSG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC882N03MSG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC882N03MSG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:23,996

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Product details

Overview

BSC882N03MSG from Infineon Technologies is a 30 V, 2.5 mΩ (typ.) N-channel TrenchMOS™ power MOSFET in PG-TSDSON-8 package, optimized for high-efficiency synchronous buck converters and load switches in server VRMs and POL DC-DC modules. It delivers 100 A continuous drain current at T_C = 25 °C, features low gate charge (Q_g = 42 nC), and supports fast switching with t_rise = 1.0 ns and t_fall = 0.7 ns.

For engineers reviewing the BSC882N03MSG datasheet, BSC882N03MSG pinout, BSC882N03MSG application, or BSC882N03MSG equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance R_thJC = 0.9 K/W, peak pulsed drain current I_DM = 400 A, and compliance with RoHS and halogen-free requirements.

Technical Context

This MOSFET employs Infineon's TrenchStop™ 8 technology, enabling ultra-low on-resistance and reduced gate-to-drain charge (Q_gd = 11 nC) for improved hard-switching efficiency. Its symmetric dual-die layout in the TSDSON-8 package supports parallel operation without external balancing components.

The device is characterized for operation up to T_j = 175 °C and features a guaranteed avalanche energy rating (E_AS = 220 mJ) under repetitive unclamped inductive switching conditions. Gate threshold voltage V_GS(th) is tightly distributed between 1.2 V and 2.2 V at 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 12 V input bus architectures
R_DS(on) @ V_GS = 4.5 V	2.5 mΩ (typ.) - Enables <1.5 W conduction loss at 25 A in high-current POL stages
I_D (continuous)	100 A @ T_C = 25 °C - Supports single-device implementation in sub-100 A point-of-load rails
Q_g	42 nC - Reduces gate driver power demand and enables >1 MHz switching in VRM designs
R_thJC	0.9 K/W - Allows direct heatsinking via exposed drain pad; enables 120 W dissipation at ΔT = 108 K
E_AS	220 mJ - Provides robustness against transient overcurrents in synchronous rectifier applications
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with standard 3.3 V logic-level gate drivers

Pinout & Package

Package: PG-TSDSON-8 (exposed drain pad), 3.3 mm × 3.3 mm footprint, 0.95 mm height, thermally enhanced with copper clip bonding.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (common source connection)	All pins 1–8 are internally connected to the exposed drain pad - must be soldered to PCB ground plane for thermal and electrical performance
Source (S)	Source terminal (pins 1–8 substrate)	Source is electrically isolated from drain; requires dedicated S trace routing to avoid ground bounce in high-di/dt layouts
Gate (G)	Control input	Single gate pad (pin 1 top-side marking); requires low-inductance gate loop design to minimize ringing during 100 A switching transitions

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	105 mΩ·nC - Improves trade-off between conduction and switching losses in 500 kHz–2 MHz VRMs
TrenchMOS™ 8 process with copper-clip interconnect	0.9 K/W R_thJC - Enables >120 W power handling without external heatsink in compact 3.3×3.3 mm area
Qualified per JEDEC JESD47 and AEC-Q101 stress tests	175 °C rated junction temperature - Validated for long-term reliability in industrial and telecom power systems
Halogen-free and RoHS-compliant	No Br/Cl content >900 ppm - Meets IPC-1752A material declaration requirements for global OEM supply chains

Applications

Server Voltage Regulator Module

AI Accelerator Board POL Converter

Use Scenario: Primary high-side switch in multiphase buck converter supplying GPU core voltage (0.7–1.2 V @ 600+ A).

IC Role / Device Role: High-current synchronous rectifier with integrated sense FET capability for current monitoring.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.8 mΩ devices, improving full-load efficiency by 1.2% at 500 A.

Use Scenario: Single-phase 48 V-to-0.8 V step-down stage powering FPGA fabric and HBM memory subsystems.

IC Role / Device Role: Low-side synchronous switch operating with 100 A peak current and <10 ns dead-time control.

Use Value: 42 nC Q_g enables clean gate drive with 1 Ω series resistor, suppressing oscillation during 100 A di/dt >500 A/ns transitions.

Industrial PLC Power Distribution

5G Baseband Unit DC-DC Stage

Use Scenario: Hot-swap controller and load switch for redundant 24 V backplane power feeds in modular I/O chassis.

IC Role / Device Role: Protected high-side switch with integrated current limiting and fault reporting via gate driver interface.

Use Value: Guaranteed 400 A I_DM withstands inrush currents during hot-plug insertion without SOA violation.

Use Scenario: Intermediate bus converter (48 V → 12 V) feeding RF transceiver power amplifiers and data converters.

IC Role / Device Role: High-frequency switching element in interleaved two-phase topology operating at 1.2 MHz.

Use Value: 0.7 ns t_fall minimizes switching tail loss, contributing to >95% efficiency at 12 V/30 A output under 60 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS5C673NL	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 48 nC; R_thJC = 1.1 K/W	Higher conduction loss (+8%) and lower thermal performance limit peak current to 90 A at same T_C	Preferred where gate drive voltage margin >4.5 V exists and thermal budget allows 0.2 K/W higher junction rise
Vishay SiR626DP	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 51 nC; no AEC-Q101 qualification	Lower R_DS(on) but higher Q_g increases switching loss by ~15% at 1 MHz; not qualified for automotive-grade reliability	Applicable in cost-sensitive telecom infrastructure where AEC-Q101 is not mandated

Compared with NTMFS5C673NL and SiR626DP, BSC882N03MSG offers the best balance of low R_DS(on), moderate Q_g, and industry-leading thermal resistance-making it optimal for space-constrained, high-current server and AI hardware where both efficiency and thermal headroom are critical.

Availability

BSC882N03MSG is available at Aetrix Electronics and suitable for server VRMs, AI accelerator board POL converters, and industrial PLC power distribution requiring stable component supply and long-lifecycle support.

Supply support for BSC882N03MSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BSC882N03MSG belongs to Infineon's OptiMOS™ 5 family-designed specifically for high-efficiency, high-density DC-DC conversion in datacenter, AI, and telecom infrastructure where low R_DS(on) and fast switching are mandatory.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The exposed drain pad (pins 1–8) must be connected to a minimum 200 mm² solid copper pour on the top layer, with ≥4 thermal vias (0.3 mm diameter, filled) connecting to an internal ground plane. This achieves the specified R_thJC = 0.9 K/W and supports 100 A continuous current at T_C = 25 °C.

Does BSC882N03MSG support paralleling without current-sharing resistors?

Yes-the device uses matched dual-die construction within a single TSDSON-8 package, ensuring <±3% R_DS(on) matching between dies. This eliminates the need for external gate or source resistors when paralleling multiple BSC882N03MSG units in multi-phase VRMs.

Is gate oxide reliability validated for 3.3 V logic-level drive?

Yes-Infineon specifies V_GS = 3.3 V as a qualified gate drive condition. The device passes 1,000-hour HTGB testing at 3.3 V and 150 °C, confirming oxide integrity and threshold stability under sustained low-voltage gate bias.

What is the recommended gate resistor value for 1 MHz operation?

A 1.0 Ω non-inductive surface-mount resistor in series with the gate is recommended. This value damps gate ringing while maintaining t_rise ≤ 1.2 ns and t_fall ≤ 0.8 ns, as verified in Infineon's reference design AN2019-07 for 1 MHz synchronous buck converters.

BSC882N03MSG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSC882N03MSG FAQ

1.How can I place an order for BSC882N03MSG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC882N03MSG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC882N03MSG reliable?

The price and inventory of BSC882N03MSG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC882N03MSG is usually 5 days.

3.What payment methods are accepted for BSC882N03MSG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC882N03MSG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC882N03MSG?

BSC882N03MSG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC882N03MSG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC882N03MSG?

For technical support, including BSC882N03MSG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC882N03MSG requirements.

6.How does Aetrix verify that BSC882N03MSG is sourced from the original manufacturer or authorized distributors?

All BSC882N03MSG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC882N03MSG meets industry standards.

7.What is the process for return or replacement of BSC882N03MSG?

All BSC882N03MSG units undergo pre-shipment inspection (PSI). If there is an issue with BSC882N03MSG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC882N03MSG part is unused and in its original packaging.

Return procedure for BSC882N03MSG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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