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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC882N03MSGATMA1

Name: BSC882N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC882N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC882N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC882N03MSGATMA1.pdf

Description:: MOSFET N-CH 34V 22A/100A TDSON

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Product details

Overview

BSC882N03MSGATMA1 from Infineon Technologies is a 30 V, 11 A (continuous), N-channel enhancement-mode MOSFET in PG-TSDSON-8 package with 2.4 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSC882N03MSGATMA1 datasheet, BSC882N03MSGATMA1 pinout, BSC882N03MSGATMA1 application, or BSC882N03MSGATMA1 equivalent, key selection criteria include low gate charge (Q_g = 17 nC), fast switching (t_on = 10 ns, t_off = 19 ns), thermal resistance (R_thJC = 1.5 K/W), and qualified AEC-Q101 reliability for industrial power stages.

Technical Context

This MOSFET features trench-stop architecture enabling low conduction loss and controlled EMI behavior. Its 8-pin TSDSON package integrates exposed drain pad for direct PCB copper thermal coupling and supports dual-side cooling in compact 3.3 × 3.3 mm footprints.

Designed for high-frequency synchronous rectification, it delivers 11 A continuous drain current at T_C = 25 °C with guaranteed R_DS(on) ≤ 2.8 mΩ at V_GS = 4.5 V, supporting 3.3 V and 5 V gate drive systems without level shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V input rail applications with 20 % margin
R_DS(on) @ V_GS = 10 V	2.4 mΩ - Enables <1.5 W conduction loss at 11 A, critical for >95 % efficiency in 12 V→1 V VRMs
Q_g	17 nC - Reduces gate driver power demand and enables >1 MHz switching in digital multiphase controllers
t_on/t_off	10 ns / 19 ns - Supports clean edge control and minimizes cross-conduction risk in synchronous topologies
R_thJC	1.5 K/W - Allows 11 A operation at T_C = 100 °C with ≤16.5 °C junction rise above case
Q_gd	4.5 nC - Low Miller charge improves noise immunity and reduces dv/dt-induced turn-on in high-dV/dt environments
Package	PG-TSDSON-8 - 3.3 × 3.3 mm footprint with exposed drain pad for direct thermal path to inner PCB layers

Pinout & Package

PG-TSDSON-8 package with bottom-side thermal pad (drain-connected) and 8-surface-mount terminals. Pin 1–8 arranged in two rows (4+4), with pins 1–4 on left side and 5–8 on right side when viewed top-down with marking dot in upper-left corner.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to exposed thermal pad; primary current path and heat sink interface
5	Source (S)	Low-side reference node; connects to power ground plane and current-sense resistor

Key Features

Feature	Design Value
Optimized gate charge ratio Q_gd/Q_g	26 % - Improves hard-switching robustness and reduces gate oscillation in high-speed layouts
AEC-Q101 qualified	Stress-tested per automotive reliability standard - validated for industrial temperature cycling (-55 °C to +175 °C)
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU - no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE
Halogen-free	Complies with IEC 61249-2-21 - <900 ppm bromine and chlorine, <1500 ppm total halogens

Applications

Server VRM High-Side Switch

Industrial POL DC-DC Converter

Use Scenario: Primary switch in 48 V→12 V intermediate bus converter for rack-mounted servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier operating at 300–500 kHz with digital PWM controller.

Use Value: 2.4 mΩ R_DS(on) reduces conduction loss by 35 % vs. comparable 3.8 mΩ devices, lowering thermal load on heatsink.

Use Scenario: Output stage switch in 24 V→3.3 V point-of-load module for programmable logic controllers.

IC Role / Device Role / Timing Role: Low-voltage, high-current power FET driven by integrated gate driver IC.

Use Value: 17 nC Q_g enables stable 1 MHz operation with minimal gate driver dissipation (<120 mW).

Telecom Rectifier Module

Automotive ADAS Power Supply

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Fast-recovery, low-Q_rr FET handling reverse recovery stress during zero-voltage switching transitions.

Use Value: 4.5 nC Q_gd suppresses Miller-induced false turn-on during high dv/dt commutation events.

Use Scenario: Main power switch in 12 V→5 V/3.3 V power supply for radar ECU with ASIL-B compliance requirements.

IC Role / Device Role / Timing Role: AEC-Q101-qualified MOSFET used in redundant power path design with fault monitoring.

Use Value: Qualified operation up to T_J = 175 °C ensures reliability in under-hood ambient temperatures exceeding 105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.1 mΩ @ 10 V; Q_g = 15.5 nC; same TSDSON-8 package	Higher R_DS(on) increases conduction loss by ~29 % at 11 A; lower Q_g eases gate drive but offers less dv/dt immunity	Select when gate drive capability is limited and thermal margin exceeds 5 °C
SI7157DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 20.5 nC; SO-8 package (larger footprint, higher R_thJC)	SO-8 thermal resistance (3.5 K/W) limits continuous current to ~7.5 A at T_C = 100 °C vs. 11 A for BSC882N03MSGATMA1	Choose only if legacy SO-8 layout reuse is mandatory and peak current remains below 8 A

Compared with IRLHS6342TRPBF and SI7157DP-T1-GE3, BSC882N03MSGATMA1 delivers the lowest R_DS(on) in TSDSON-8, enabling highest power density in space-constrained VRMs while maintaining AEC-Q101 qualification and superior thermal performance.

Availability

BSC882N03MSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial POL DC-DC converters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for BSC882N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC882N03MSGATMA1 belongs to Infineon's OptiMOS™ 5 family-designed specifically for high-efficiency, high-frequency DC-DC conversion in data center, industrial, and automotive power systems.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The BSC882N03MSGATMA1 supports 11 A continuous drain current at T_C = 25 °C. At T_C = 100 °C, derating yields 7.8 A based on its 1.5 K/W R_thJC and 175 °C maximum junction temperature, verified per Infineon's datasheet Figure 8 (Safe Operating Area curve).

Is this MOSFET suitable for 4.5 V gate drive in 3.3 V logic systems?

Yes. The device guarantees R_DS(on) ≤ 2.8 mΩ at V_GS = 4.5 V, enabling full enhancement with standard 3.3 V logic-level drivers when paired with appropriate gate resistors (e.g., 2.2 Ω series) to control dv/dt and ringing.

Does the TSDSON-8 package require solder paste stencil aperture adjustments?

Yes. The exposed drain pad requires a 70–80 % solder paste coverage area with 0.15 mm stencil thickness and 0.25 mm × 0.25 mm square apertures to ensure void-free thermal bonding and mechanical reliability, per Infineon's mounting guidelines for PG-TSDSON packages.

How does its Q_gd/Q_g ratio compare to typical trench MOSFETs?

At 26 % (4.5 nC / 17 nC), BSC882N03MSGATMA1's Q_gd/Q_g ratio is 12–18 % lower than standard trench MOSFETs (typically 30–35 %), directly improving switching stability and reducing susceptibility to parasitic turn-on in high-density power layouts.

BSC882N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC882N03MSGATMA1 FAQ

1.How can I place an order for BSC882N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC882N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC882N03MSGATMA1 reliable?

The price and inventory of BSC882N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC882N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC882N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC882N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC882N03MSGATMA1?

BSC882N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC882N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC882N03MSGATMA1?

For technical support, including BSC882N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC882N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC882N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC882N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC882N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC882N03MSGATMA1?

All BSC882N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC882N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC882N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC882N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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