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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC883N03LSGATMA1

Name: BSC883N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC883N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC883N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC883N03LSGATMA1.pdf

Description:: MOSFET N-CH 34V 17A/98A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:7,120

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Product details

Overview

BSC883N03LSGATMA1 from Infineon Technologies is a 30 V, 100 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 1.4 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the BSC883N03LSGATMA1 datasheet, BSC883N03LSGATMA1 pinout, BSC883N03LSGATMA1 application, or BSC883N03LSGATMA1 equivalent, key selection criteria include continuous drain current (100 A), low gate charge (37 nC total), fast switching (t_on = 15 ns, t_off = 22 ns), and thermally enhanced exposed-drain DSO-8 footprint.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering ultra-low R_DS(on) × Q_g figure-of-merit (52 mΩ·nC) for minimal conduction and switching losses in high-frequency DC-DC conversion. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device features a fully rated avalanche energy rating (E_AS = 290 mJ), integrated gate protection diode, and 100 % UIS-tested ruggedness-critical for transient-heavy VRM operation. Thermal resistance R_thJC = 0.5 K/W supports high-power density layouts when mounted on 1 oz copper with thermal vias.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) @ V_GS = 10 V	1.4 mΩ - Enables <1 W conduction loss at 80 A in 12 V input VRMs
Continuous Drain Current I_D	100 A - Rated for sustained operation at T_C = 25 °C with adequate heatsinking
Total Gate Charge Q_g	37 nC - Reduces driver power loss and allows use of low-current gate drivers
Output Capacitance C_oss	1,250 pF - Low value minimizes dead-time losses and improves light-load efficiency
Avalanche Energy E_AS	290 mJ - Withstands repetitive inductive switching stress without degradation
Thermal Resistance R_thJC	0.5 K/W - Supports >100 W dissipation with junction-to-case temperature gradient under forced air

Pinout & Package

Package: PG-TDSON-8 (exposed-drain DSO-8), 5.15 mm × 6.2 mm × 1.27 mm, thermally optimized with large copper drain paddle for PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Power Drain Connection	Internally bonded to exposed copper pad; primary heat path to PCB ground plane
4 (Gate)	Control Input	Logic-level compatible; requires ≤2.2 V to turn on fully; low C_iss = 3,200 pF
8 (Source)	Reference Node	Common return for gate drive and load current; connects to power ground in half-bridge layout

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	52 mΩ·nC - Maximizes efficiency in 300–1000 kHz VRM designs with minimal driver overhead
100 % UIS tested	Rated for repetitive unclamped inductive switching up to 290 mJ - eliminates need for external snubbers
Enhanced dv/dt ruggedness	Guaranteed >50 V/ns - prevents false turn-on in high-slew-rate synchronous rectifier applications
Lead-free & RoHS compliant	Matte tin plating on leads; halogen-free epoxy; compliant with IPC/JEDEC J-STD-020D reflow profile

Applications

Server VRM High-Side Switch

GPU Power Stage Low-Side Sync FET

Use Scenario: Primary switch in 48 V–12 V intermediate bus converter feeding CPU core rails.

IC Role / Device Role / Timing Role: High-side power switch operating at 600 kHz with 30 ns dead time.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by 38 % vs. legacy 2.2 mΩ devices, enabling 95.2 % peak efficiency.

Use Scenario: Synchronous rectifier in multiphase GPU core supply delivering up to 1,200 A.

IC Role / Device Role / Timing Role: Low-side FET in interleaved 3-phase buck with 1 MHz switching.

Use Value: 37 nC Q_g lowers gate drive loss by 42 %, allowing smaller gate drivers and tighter phase alignment.

Industrial PLC Power Module

Telecom Rectifier Output Stage

Use Scenario: 24 V backup power rail switch with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Protected high-side load switch controlled via microcontroller GPIO.

Use Value: Logic-level V_GS(th) enables direct 3.3 V MCU control; 100 A rating supports hot-swap sequencing.

Use Scenario: OR-ing FET in redundant 48 V telecom rectifier outputs.

IC Role / Device Role / Timing Role: Reverse-polarity blocking element with fast turn-off during fault.

Use Value: 22 ns t_off ensures sub-100 ns reverse-current cutoff, preventing backfeed into failed modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 42 nC; R_thJC = 0.75 K/W	Lower current rating (75 A); higher conduction loss in >60 A phases	Acceptable for cost-sensitive 48–12 V converters below 60 A per phase
STL220N3LLH6	R_DS(on) = 1.3 mΩ @ 10 V; Q_g = 58 nC; PG-HSOF-8 package	Higher gate charge increases driver loss; larger footprint limits board density	Preferred where thermal margin exceeds electrical margin, e.g., natural-convection cooled systems

Compared with IRL8721PBF and STL220N3LLH6, BSC883N03LSGATMA1 delivers the best balance of ultra-low R_DS(on), moderate Q_g, and compact thermal package-making it optimal for space-constrained, high-efficiency multi-phase VRMs requiring ≥100 A capability.

Availability

BSC883N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for BSC883N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors-with over 30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

BSC883N03LSGATMA1 belongs to the OptiMOS™ 3 family, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter and AI accelerator power delivery networks.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable continuous operation, derate I_D linearly above T_C = 25 °C using R_thJC = 0.5 K/W and ambient constraints-designs targeting >100 A must maintain T_J ≤ 150 °C to ensure 10-year lifetime per JEDEC JEP47.

Is BSC883N03LSGATMA1 suitable for paralleling in multi-phase designs?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing across paralleled units. Layout symmetry (matched gate trace lengths, shared source inductance < 0.5 nH) is required to achieve ≤5 % current imbalance at 100 A per phase.

Does this MOSFET require a gate resistor for stability in high-speed switching?

A 2.2 Ω non-inductive gate resistor is recommended to dampen ringing caused by PCB parasitics and prevent oscillation during 1 MHz+ switching. Values >4.7 Ω increase t_on/t_off disproportionately and degrade efficiency.

Can BSC883N03LSGATMA1 be used in avalanche mode for clamping transients?

Yes-it is 100 % UIS tested to 290 mJ at T_J = 25 °C. For repetitive avalanche, limit single-pulse energy to ≤150 mJ and ensure average power remains below 2.5 W with proper heatsinking to avoid cumulative junction temperature rise.

BSC883N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC883N03LSGATMA1 FAQ

1.How can I place an order for BSC883N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC883N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC883N03LSGATMA1 reliable?

The price and inventory of BSC883N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC883N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC883N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC883N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC883N03LSGATMA1?

BSC883N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC883N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC883N03LSGATMA1?

For technical support, including BSC883N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC883N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC883N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC883N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC883N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC883N03LSGATMA1?

All BSC883N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC883N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC883N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC883N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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