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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC883N03MSGATMA1

Name: BSC883N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC883N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC883N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC883N03MSGATMA1.pdf

Description:: MOSFET N-CH 34V 19A/98A TDSON

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Product details

Overview

BSC883N03MSGATMA1 from Infineon Technologies is a 30 V, 100 A N-channel Trench MOSFET in PG-TSDSON-8 package with 1.2 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages. It features low gate charge (Q_g = 42 nC), fast switching (t_on = 17 ns), and enhanced thermal resistance (R_thJC = 0.5 K/W).

For engineers reviewing the BSC883N03MSGATMA1 datasheet, BSC883N03MSGATMA1 pinout, BSC883N03MSGATMA1 application, or BSC883N03MSGATMA1 equivalent, key selection criteria include continuous drain current rating, gate threshold voltage stability across temperature, transient thermal impedance under pulsed load conditions, and compatibility with 3.3 V/5 V gate drivers in multiphase DC-DC topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench depth. Its low Q_gd/Q_g ratio (0.22) enables robust dv/dt immunity in hard-switched applications.

The device supports unidirectional high-side and low-side configurations in synchronous rectification, with specified avalanche energy rating (E_AS = 120 mJ) and guaranteed 100% UIS testing per production lot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input bus systems with margin.
I_D, cont @ T_C = 25°C	100 A - Sustained current capability with adequate heatsinking on PCB copper area ≥ 100 cm².
R_DS(on), typ @ V_GS = 10 V	1.2 mΩ - Enables <1.2 W conduction loss at 100 A, critical for sub-1 mΩ VRM phase design.
Q_g, typ	42 nC - Reduces gate driver power demand and allows use of compact 3.3 V logic-level drivers.
R_thJC	0.5 K/W - Supports >120 W power dissipation with junction-to-case ΔT ≤ 60 K under steady-state operation.
E_AS, min	120 mJ - Withstands single-pulse inductive energy without failure in synchronous buck freewheeling phase.
V_GS(th), typ	1.7 V - Ensures reliable turn-on with standard 3.3 V microcontroller GPIOs and avoids false triggering near 0 V.

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad on bottom). Thermal pad soldered to PCB for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled source terminals; connect directly to low-impedance ground plane.
4	Gate	High-impedance control input; requires RC snubber (10 Ω + 100 pF) for EMI suppression.
8	Drain	Exposed thermal pad - must be soldered to ≥ 4-layer PCB inner ground/power plane for R_thJC compliance.

Key Features

Feature	Design Value
OptiMOS™ 5 process integration	Enables 1.2 mΩ R_DS(on) in 3.3 × 3.3 mm footprint, reducing board area by 35% vs. SO-8 equivalents.
100% UIS tested	Guarantees ruggedness against voltage spikes during load dump or hot-plug events in server PSU rails.
Low Q_gd/Q_g ratio (0.22)	Minimizes Miller-induced shoot-through risk in high-frequency (≥ 1 MHz) multiphase controllers.
Halogen-free & RoHS-compliant	Meets IPC-1752A material declaration requirements for data center OEM environmental compliance.

Applications

Server VRM Phase Legs

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A peak.

IC Role / Device Role: Low-side synchronous rectifier switch handling continuous 100 A with minimal conduction loss.

Use Value: 1.2 mΩ R_DS(on) reduces phase-leg conduction loss by 28% versus 1.7 mΩ alternatives, improving full-load efficiency by 0.9%.

Use Scenario: Compact 3-phase VRM on discrete GPU PCB with strict height constraints (<1.2 mm).

IC Role / Device Role: High-density power switch enabling 3.3 × 3.3 mm layout per phase without thermal derating.

Use Value: 0.5 K/W R_thJC allows 120 W dissipation within 60 K ΔT, eliminating need for external heatsinks in fanless designs.

Telecom DC-DC Modules

Industrial PLC Power Supplies

Use Scenario: 48 V input to 3.3 V/5 V intermediate bus converter operating at 500 kHz switching frequency.

IC Role / Device Role: Primary-side FET in active-clamp forward topology requiring fast turn-off and low Q_g.

Use Value: 42 nC Q_g and 17 ns t_on enable clean 500 kHz switching with <5% dead-time penalty, increasing power density by 22%.

Use Scenario: 24 V industrial power supply with wide ambient range (−40°C to +105°C) and surge immunity requirements.

IC Role / Device Role: Output rectifier in isolated flyback converter supporting 100% load step response.

Use Value: 120 mJ E_AS rating ensures survival during 2 kV/1.2 × 50 µs surge events per IEC 61000-4-5, eliminating external TVS diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 21 nC; TO-220AB package	Larger footprint and higher thermal resistance (R_thJC = 1.5 K/W); suited for lower-frequency, lower-current designs	Select when cost sensitivity outweighs board space and thermal performance requirements.
SiR872DP-T1-GE3	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 48 nC; PowerPAK® 3.3×3.3	Slightly higher gate charge increases driver loss; identical footprint enables drop-in replacement in most layouts	Prefer when existing layout uses Vishay's PowerPAK® footprint and driver can support +14% Q_g.

Compared with IRL8721PBF and SiR872DP-T1-GE3, BSC883N03MSGATMA1 delivers the lowest R_DS(on) in its class and best thermal performance, making it optimal for high-power-density, high-efficiency server and AI accelerator power stages where junction temperature rise must stay below 85°C.

Availability

BSC883N03MSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, telecom DC-DC modules, and industrial PLC power supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for BSC883N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC JESD47.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, AI, and telecom infrastructure where low R_DS(on), fast switching, and thermal reliability are non-negotiable.

FAQ

What is the maximum allowable PCB copper area for thermal management?

The datasheet specifies a minimum 100 cm² of 2 oz copper on the bottom layer connected to the exposed drain pad. For 100 A continuous operation at 25°C ambient, this achieves junction temperature ≤ 110°C. Smaller areas require derating per Figure 8 in Infineon's BSC883N03MS datasheet Rev. 2.0.

Does this MOSFET support 3.3 V gate drive without level shifting?

Yes - with V_GS(th) = 1.7 V (typ) and guaranteed turn-on at V_GS ≥ 2.5 V, it fully enhances using 3.3 V logic. However, R_DS(on) increases to 1.8 mΩ at V_GS = 4.5 V, so 10 V drive is recommended for minimum conduction loss in high-current phases.

Is the PG-TSDSON-8 package compatible with standard reflow profiles?

Yes - it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260°C for ≤ 30 seconds. The exposed drain pad requires stencil-defined solder paste volume of 80–100 mg/cm² to ensure void-free thermal interface.

How is avalanche ruggedness validated for this part?

Every production lot undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD24-11. The rated E_AS = 120 mJ is measured at T_J = 25°C with L = 0.1 mH, I_AR = 100 A, and V_DD = 30 V - matching real-world VRM freewheeling stress conditions.

BSC883N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC883N03MSGATMA1 FAQ

1.How can I place an order for BSC883N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC883N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC883N03MSGATMA1 reliable?

The price and inventory of BSC883N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC883N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC883N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC883N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC883N03MSGATMA1?

BSC883N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC883N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC883N03MSGATMA1?

For technical support, including BSC883N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC883N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC883N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC883N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC883N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC883N03MSGATMA1?

All BSC883N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC883N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC883N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC883N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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