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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC886N03LSGATMA1

Name: BSC886N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC886N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC886N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC886N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 13A/65A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:7,066

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Product details

Overview

BSC886N03LSGATMA1 from Infineon Technologies is a 30 V, 40 A, logic-level N-channel TrenchMOS power MOSFET in PG-TSDSON-8 package with 2.2 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSC886N03LSGATMA1 datasheet, BSC886N03LSGATMA1 pinout, BSC886N03LSGATMA1 application, or BSC886N03LSGATMA1 equivalent, key selection criteria include gate charge (Q_g = 19.5 nC), low reverse recovery charge (Q_rr = 27 nC), fast turn-on/turn-off times, and thermally enhanced exposed-drain DSO-8 footprint for high-current switching stages.

Technical Context

This device implements Infineon's TrenchMOS technology with optimized cell layout for reduced conduction and switching losses. It features a fully rated 30 V drain-source breakdown voltage and supports continuous drain current up to 40 A at T_C = 25 °C with pulse capability of 120 A.

The MOSFET integrates a robust body diode with low Q_rr and soft recovery characteristics, enabling efficient operation in hard-switched synchronous rectification. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) ensures direct drive from 3.3 V or 5 V controllers without level-shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin
R_DS(on) @ V_GS = 10 V	2.2 mΩ - Enables <1 W conduction loss at 20 A DC in high-current POL stages
Q_g	19.5 nC - Low gate charge reduces driver power and enables >1 MHz switching
Q_rr	27 nC - Minimizes commutation loss and EMI in synchronous buck topologies
T_j max	150 °C - Supports operation in thermally constrained server and telecom power modules
P_D @ T_C = 25 °C	71 W - Sustains high pulsed current in transient load conditions
Package	PG-TSDSON-8 (3.3 × 3.3 mm) - Exposed drain pad enables <2.5 °C/W junction-to-case thermal resistance

Pinout & Package

PG-TSDSON-8 (3.3 × 3.3 mm, 0.9 mm height) with thermally enhanced exposed drain pad on bottom side. Pin 1 marked by chamfered corner.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled source terminals reduce package inductance and improve current sharing
4	Gate	Single low-inductance gate input for clean switching edge control
8	Drain	Exposed copper pad - primary thermal path to PCB; must be soldered to large copper pour

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_rr (27 nC) and soft-recovery body diode reduce shoot-through risk and EMI
Logic-level gate drive	V_GS(th) range 1.2–2.2 V enables direct interface with 3.3 V PWM controllers
Thermally enhanced package	Exposed drain pad achieves R_θJC = 2.2 °C/W, critical for compact VRM designs
Low gate-to-drain charge (Q_gd)	5.1 nC - Improves Miller immunity and dV/dt ruggedness in high-side configurations

Applications

Server VRM High-Side Switch

Telecom POL Converter

Use Scenario: Primary switch in 48 V–12 V intermediate bus converter for AI accelerator cards.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET driven by multiphase controller with 500 kHz–1 MHz switching frequency.

Use Value: 2.2 mΩ R_DS(on) and 19.5 nC Q_g enable >95% efficiency at 30 A output while maintaining thermal headroom.

Use Scenario: Point-of-load step-down regulator supplying 0.8 V/60 A to FPGA core rails in 5G baseband units.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode with tight duty cycle control.

Use Value: 27 nC Q_rr and soft recovery minimize body diode conduction loss and voltage overshoot during dead-time transitions.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: Half-bridge leg in 24 V BLDC gate driver power stage for servo actuators.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (t_off = 14 ns) to support precise PWM timing and torque ripple reduction.

Use Value: 120 A pulsed current rating handles motor stall conditions without thermal runaway under forced-air cooling.

Use Scenario: Compact 12 V–3.3 V DC-DC module powering radar SoC in automotive front-end sensor clusters.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in monolithic buck IC companion stage.

Use Value: AEC-Q101 qualified variant available; this part shares identical die and thermal performance for design reuse across automotive and industrial platforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 21.5 nC; same PG-TSDSON-8 footprint	Slightly higher conduction loss; less optimized body diode (Q_rr = 42 nC)	Preferred where Infineon supply chain continuity is required; IRLHS6342 offers broader distributor stock
DMTH3006LPSQ-13	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 24.5 nC; AEC-Q101 qualified out-of-box	Higher gate charge increases driver loss; tighter V_GS(th) tolerance (1.0–1.8 V)	Select when automotive qualification is mandatory; otherwise BSC886N03LSGATMA1 delivers lower total switching loss

Compared with IRLHS6342TRPBF and DMTH3006LPSQ-13, BSC886N03LSGATMA1 provides the lowest Q_rr/R_DS(on) product (12.3 nC·mΩ), making it optimal for high-frequency, high-current synchronous rectification where body diode performance dominates efficiency.

Availability

BSC886N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply and long-term production support.

Supply support for BSC886N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's OptiMOS™ 30 V family, engineered specifically for high-efficiency, high-density DC-DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for BSC886N03LSGATMA1?

The device is rated for 40 A continuous drain current at case temperature T_C = 25 °C. At T_C = 100 °C, the derated limit is 22 A. This rating assumes proper PCB copper area (≥ 100 cm² 2 oz Cu) under the exposed drain pad and adequate airflow.

Does BSC886N03LSGATMA1 require a gate resistor for stability in high-speed switching?

Yes - a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The low Q_gd (5.1 nC) and 1.2–2.2 V V_GS(th) make it sensitive to parasitic oscillation without proper gate network design.

Can BSC886N03LSGATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. For two devices in parallel, ensure matched gate drive loop inductance (<0.5 nH difference) and symmetrical PCB layout to avoid dynamic current imbalance above 500 kHz.

Is there an automotive-grade version of this MOSFET?

Yes - the BSC886N03LSGATMA1 has a pin-compatible AEC-Q101 qualified variant: BSC886N03LSGXUMA1. It shares identical electrical specs and thermal performance but includes extended reliability testing per automotive stress requirements.

BSC886N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC886N03LSGATMA1 FAQ

1.How can I place an order for BSC886N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC886N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC886N03LSGATMA1 reliable?

The price and inventory of BSC886N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC886N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC886N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC886N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC886N03LSGATMA1?

BSC886N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC886N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC886N03LSGATMA1?

For technical support, including BSC886N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC886N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC886N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC886N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC886N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC886N03LSGATMA1?

All BSC886N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC886N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC886N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC886N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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