Infineon Technologies BSD816SNH6327XTSA1
- Part No.:
- BSD816SNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BSD816SNH6327XTSA1.pdf
- Description:
- MOSFET N-CH 20V 1.4A SOT363-6
- Quantity:
- Payment:

- Shipping:

Inventory:2,522
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Product details
Overview
BSD816SNH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode small-signal MOSFET with 20 V VDS, 1.4 A continuous drain current, and ultra-low 1.8 V logic-level gate drive capability. It features avalanche rating, AEC-Q101 qualification, and 240 mΩ RDS(on) at VGS = 1.8 V, enabling use in automotive LED drivers and low-voltage load switching.
For engineers reviewing the BSD816SNH6327XTSA1 datasheet, BSD816SNH6327XTSA1 pinout, BSD816SNH6327XTSA1 application, or BSD816SNH6327XTSA1 equivalent, key selection criteria include logic-level gate compatibility, SOT363 footprint constraints, avalanche robustness for inductive loads, and AEC-Q101 compliance for automotive subsystems.
Technical Context
This device operates as a single N-channel power switch optimized for 1.8–2.5 V control interfaces in space-constrained automotive and industrial modules. Its 240 mΩ RDS(on) at 1.8 V enables direct microcontroller GPIO driving without level-shifting, while its 3.7 mJ single-pulse avalanche energy supports reliable operation with inductive flyback transients.
The PG-SOT363 package integrates three terminals per channel (source, gate, drain) in a dual-channel configuration - confirmed by marking "XAs" and pinout diagrams showing pins 1–3 and 4–6 as two independent MOSFETs - with thermal resistance of 250 K/W on minimal FR4 footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum blocking voltage for 12 V automotive rail and 5 V logic-supplied loads |
| RDS(on) @ VGS=1.8 V | 240 mΩ - enables 1.4 A continuous conduction with ≤0.5 W conduction loss at TA=25°C |
| ID continuous | 1.4 A @ TA=25°C - supports LED string drivers and sensor interface switches |
| EAS | 3.7 mJ - withstands single-pulse inductive energy from solenoid/relay coils without failure |
| Qg | 0.6 nC - ensures fast switching (<15 ns rise/fall) with low gate-drive power demand |
| Tj range | −55 to +150°C - qualified for under-hood automotive environments per AEC-Q101 |
| Ciss | 126–180 pF - determines gate drive impedance requirements and EMI filtering needs |
Pinout & Package
Package: PG-SOT363 (3.0 × 1.8 × 0.9 mm), lead-free, halogen-free, tape-and-reel (3000 pcs/reel, H6327 marking).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Source (Channel 1) | Low-side return path for first MOSFET; tied to PCB ground plane for thermal and electrical reference |
| Pin 2 | Gate (Channel 1) | Logic-level input requiring ≤1.8 V threshold; decoupling capacitor placement critical near this pin |
| Pin 3 | Drain (Channel 1) | Switched high-side output; routed with minimum loop area to reduce EMI from switching edges |
| Pin 4 | Drain (Channel 2) | Independent high-side output for dual-load control; electrically isolated from Channel 1 drain |
| Pin 5 | Gate (Channel 2) | Second logic-level input; requires separate gate resistor for independent timing control |
| Pin 6 | Source (Channel 2) | Second low-side return; may be commoned with Pin 1 or kept separate for current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra logic-level gate | 1.8 V rated threshold enables direct interfacing with 1.8 V/2.5 V MCUs without level shifters |
| Avalanche-rated | 3.7 mJ single-pulse energy handling allows safe operation with inductive loads like relays and solenoids |
| AEC-Q101 qualified | Validated for automotive applications including body electronics and lighting control modules |
| Dual-channel SOT363 | Two independent N-MOSFETs in one compact package reduce board area vs. discrete solutions |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU RoHS Directive for environmentally regulated production |
Applications
| Automotive LED Tail Light Driver | Low-Voltage Sensor Interface Switch |
|---|---|
Use Scenario: Driving multiple 12 V LED strings in rear lighting modules with PWM dimming. IC Role / Device Role / Timing Role: Dual N-channel load switch controlling cathode-side current paths with independent gate control. Use Value: 240 mΩ RDS(on) at 1.8 V ensures <100 mW per channel loss at 500 mA, minimizing thermal derating in sealed housings. | Use Scenario: Enabling/disabling analog sensor signals (e.g., pressure, temperature) in battery-powered ECUs. IC Role / Device Role / Timing Role: Low-leakage signal path switch isolating sensors during sleep mode. Use Value: 1 µA max IDSS at 25°C and 100 µA at 150°C prevents battery drain over extended idle periods. |
| Industrial PLC Digital Output Module | USB-C Port Power Switch |
Use Scenario: Providing 24 V DC solid-state outputs for field actuators in compact programmable logic controllers. IC Role / Device Role / Timing Role: High-reliability switching element with integrated avalanche protection for inductive load transients. Use Value: 3.7 mJ EAS absorbs flyback energy from 24 V solenoids without external snubbers or TVS diodes. | Use Scenario: Controlling VBUS enable/disable in USB-C power delivery circuits with 5 V logic control. IC Role / Device Role / Timing Role: Low-RDS(on) load switch managing power path between source and sink devices. Use Value: 112 mΩ RDS(on) at 2.5 V reduces voltage drop to <560 mV at 5 A, maintaining PD specification compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS138W-7-F | Lower ID (220 mA), higher RDS(on) (3.5 Ω @ 2.5 V), no avalanche rating | Suitable only for signal switching, not power loads | Select only for low-current digital isolation where avalanche robustness is unnecessary |
| DMN2004K-7 | Higher RDS(on) (300 mΩ @ 2.5 V), same 20 V rating, no AEC-Q101 qualification | Lacks automotive qualification and lower gate-threshold margin | Acceptable for industrial non-automotive use but requires external transient protection |
Compared with BSS138W-7-F and DMN2004K-7, BSD816SNH6327XTSA1 uniquely combines AEC-Q101 qualification, 1.8 V logic compatibility, and 3.7 mJ avalanche capability - making it the only option qualified for automotive load-switching where reliability under transient stress is mandatory.
Availability
BSD816SNH6327XTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, industrial PLC outputs, USB-C power management, and low-voltage sensor interface applications requiring stable component supply across multi-year production cycles.
Supply support for BSD816SNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.
The OptiMOS™2 small-signal transistor product line targets space-constrained, high-reliability applications in automotive body electronics and industrial automation, emphasizing logic-level drivability and transient robustness.
FAQ
Is BSD816SNH6327XTSA1 pin-compatible with BSD816SH6327XTSA1?
No. BSD816SNH6327XTSA1 is an N-channel dual MOSFET in PG-SOT363; BSD816SH6327XTSA1 is a P-channel variant with opposite polarity and different threshold behavior. Pin assignments differ in functional role - e.g., Pin 2 is gate for both, but source/drain orientation is inverted - requiring schematic and layout revision.
What is the maximum allowable gate-source voltage during transient conditions?
The absolute maximum VGS is ±8 V per datasheet Rev 2.5. Operation beyond ±6 V risks oxide damage, especially during hot-plug or ESD events. A 4.7 kΩ series gate resistor and 5.6 V Zener clamp are recommended for robust 12 V system integration.
Does the device support parallel operation for higher current handling?
Yes, but with strict layout controls: matched gate trace lengths, individual gate resistors (≤10 Ω), and symmetrical thermal vias under each source pad. Derating to 1.1 A per device is required at TA = 70°C due to thermal coupling in shared SOT363 footprint.
How does the 250 K/W RthJA value translate to real-world thermal performance?
On a 40 mm² FR4 PCB with 1 mm wide, 70 µm thick copper traces on both sides, junction-to-ambient rise is 250 K per watt. At 1.4 A and 240 mΩ, PD ≈ 0.47 W → ΔT ≈ 118°C above ambient. Thus, max TA must be limited to 32°C to hold Tj ≤ 150°C.
BSD816SNH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 2.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-6
BSD816SNH6327XTSA1 FAQ
1.How can I place an order for BSD816SNH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSD816SNH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSD816SNH6327XTSA1 reliable?
The price and inventory of BSD816SNH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSD816SNH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BSD816SNH6327XTSA1?
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BSD816SNH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSD816SNH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSD816SNH6327XTSA1?
For technical support, including BSD816SNH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSD816SNH6327XTSA1 requirements.
6.How does Aetrix verify that BSD816SNH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BSD816SNH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSD816SNH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BSD816SNH6327XTSA1?
All BSD816SNH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSD816SNH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSD816SNH6327XTSA1 part is unused and in its original packaging.
Return procedure for BSD816SNH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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