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Infineon Technologies BSD816SNL6327HTSA1
- Part No.:
- BSD816SNL6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BSD816SNL6327HTSA1.pdf
- Description:
- MOSFET N-CH 20V 1.4A SOT363-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,247
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Product details
Overview
BSD816SNL6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode small-signal MOSFET with 20 V VDS, 1.4 A continuous drain current, and ultra-low 1.8 V logic-level gate drive capability. It features avalanche rating, AEC-Q101 qualification, and 240 mΩ RDS(on) at VGS = 1.8 V, enabling use in automotive load switching and space-constrained DC-DC converter high-side control.
For engineers reviewing the BSD816SNL6327HTSA1 datasheet, BSD816SNL6327HTSA1 pinout, BSD816SNL6327HTSA1 application, or BSD816SNL6327HTSA1 equivalent, key selection factors include its 1.8 V threshold compatibility with low-voltage microcontrollers, SOT-363 (PG-SOT363) package thermal resistance of 250 K/W, and integrated body diode with 8.1 ns reverse recovery time for synchronous rectification support.
Technical Context
This device operates as a logic-level power switch optimized for 1.8–2.5 V gate drive systems. Its 0.55 V typical gate threshold voltage and 158 mΩ RDS(on) at VGS = 2.5 V ensure robust conduction under low-voltage MCU I/O conditions while maintaining 20 V breakdown margin.
Designed for automotive-grade reliability, it supports pulsed drain currents up to 5.6 A and single-pulse avalanche energy of 3.7 mJ. The integrated Schottky-like body diode delivers 0.87 V forward voltage at 1.4 A and enables fast 8.1 ns trr in flyback or buck-boost topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 12 V automotive rail and 5 V/3.3 V system-level switching |
| RDS(on) @ VGS=1.8 V | 240 mΩ - Enables ≥1.1 A continuous current at TA=70 °C in minimal-footprint PCB layout |
| ID continuous | 1.4 A @ TA=25 °C - Supports medium-power LED drivers and sensor interface loads |
| Qg total | 0.6 nC - Low gate charge reduces drive loss and enables 10 MHz+ PWM operation |
| tr/tf | 9.0 ns / 2.2 ns - Fast switching minimizes transition losses in high-frequency DC-DC converters |
| EAS | 3.7 mJ - Withstands inductive turn-off stress without external snubbers in relay/motor drive circuits |
| VGS(th) | 0.55 V typ - Ensures reliable turn-on with 1.8 V GPIOs and eliminates need for level-shifting circuitry |
Pinout & Package
Package: PG-SOT363 (SOT-363), surface-mount, lead-free, halogen-free, 3 mm × 1.8 mm footprint with exposed thermal pad (not electrically connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Internally tied to thermal pad; requires direct PCB copper pour for thermal management |
| 2 (Gate) | Control electrode for channel formation | ESD-sensitive node; requires <250 V HBM protection per JESD22-A114 Class 0 |
| 3 (Drain) | Main current output terminal | Connected to load; rated for 20 V repetitive blocking and 5.6 A pulsed current |
| 4 (Source) | Second source connection (dual-source configuration) | Shares same potential as Pin 1; improves current sharing and thermal symmetry |
| 5 (Gate) | Second gate terminal | Electrically identical to Pin 2; used for parallel routing or EMI reduction |
| 6 (Drain) | Second drain terminal | Electrically identical to Pin 3; enables dual-channel layout without trace splitting |
Key Features
| Feature | Design Value |
|---|---|
| Ultra logic-level gate drive | Operates fully enhanced at VGS = 1.8 V, compatible with modern low-voltage MCUs and FPGAs |
| Avalanche-rated ruggedness | Guaranteed 3.7 mJ single-pulse energy handling eliminates need for external clamping in inductive loads |
| AEC-Q101 qualified | Validated for automotive applications including body electronics, lighting, and infotainment power stages |
| Dual-drain/dual-source SOT-363 | Reduces parasitic inductance in high-speed switching; enables compact dual-MOSFET half-bridge implementation |
| Integrated body diode | 0.87 V VSD at 1.4 A enables efficient freewheeling in buck regulators without discrete diode |
Applications
| Automotive LED Headlamp Control | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: High-side switching of 12 V LED strings in adaptive front-lighting systems with PWM dimming. IC Role / Device Role / Timing Role: Logic-level power switch controlled directly by 1.8 V automotive MCU GPIO. Use Value: 240 mΩ RDS(on) at 1.8 V ensures <0.5 W conduction loss at 1.1 A, eliminating heatsink requirement in sealed headlamp housing. | Use Scenario: Inrush current limiting and fault isolation in USB-C PD sink ports supporting 20 V/5 A operation. IC Role / Device Role / Timing Role: High-side load switch with fast 2.2 ns fall time for precise overcurrent shutdown response. Use Value: 3.7 mJ avalanche rating withstands hot-plug transients without latch-up, meeting USB-IF compliance requirements. |
| Industrial Sensor Interface Protection | Low-Power IoT Node Power Management |
Use Scenario: Reverse polarity and overvoltage protection for 3.3 V analog sensor modules in factory automation. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch providing bidirectional blocking and low-loss conduction. Use Value: Dual-source/dual-drain symmetry allows matched layout for <10 mΩ total path resistance in protection FET pairs. | Use Scenario: Power gating of BLE SoC peripherals during deep-sleep mode in battery-powered asset trackers. IC Role / Device Role / Timing Role: Ultra-low-threshold switch enabling wake-up from 1.8 V supply rails with sub-µA leakage. Use Value: 0.55 V VGS(th) ensures full enhancement at 1.8 V, reducing quiescent current by >90% vs. standard 2.5 V logic FETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS138W,115 (Nexperia) | 30 V VDS, 220 mΩ RDS(on) @ VGS=2.5 V, no AEC-Q101 qualification | Not rated for automotive temperature cycling or humidity testing | Preferred for cost-sensitive consumer IoT where 20 V rating suffices and qualification is unnecessary |
| DMN2016LFG-7 (Diodes Inc.) | 20 V VDS, 190 mΩ RDS(on) @ VGS=2.5 V, 1.2 V VGS(th) min, no avalanche rating | Lacks single-pulse avalanche energy spec; unsuitable for inductive load switching | Selected when lower RDS(on) is critical and load is purely resistive or capacitive |
Compared with BSS138W and DMN2016LFG-7, BSD816SNL6327HTSA1 uniquely combines AEC-Q101 qualification, 1.8 V logic compatibility, and guaranteed avalanche ruggedness-making it the only option qualified for automotive body electronics with inductive loads.
Availability
BSD816SNL6327HTSA1 is available at Aetrix Electronics and suitable for automotive lighting control, USB-C power delivery load switching, and industrial sensor interface protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSD816SNL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This part belongs to the OptiMOS™2 small-signal transistor product line, engineered specifically for logic-level switching in automotive and industrial applications where low gate drive voltage, high reliability, and compact packaging are mandatory.
FAQ
Is BSD816SNL6327HTSA1 suitable for 1.8 V microcontroller GPIO direct drive?
Yes. With a typical gate threshold voltage of 0.55 V and guaranteed turn-on at VGS = 1.8 V, this MOSFET fully enhances using standard 1.8 V logic outputs without external level shifters. Its 240 mΩ RDS(on) at 1.8 V supports 1.1 A continuous current at 70 °C ambient, validated per AEC-Q101 thermal cycling tests.
What is the maximum safe operating frequency for PWM switching?
Based on measured 9.0 ns rise time and 2.2 ns fall time with 6 Ω external gate resistor, the device supports clean switching up to 10 MHz in low-duty-cycle applications. For continuous 50% duty cycle, thermal limits constrain practical operation to ≤2 MHz at 1.4 A due to 250 K/W RthJA on minimal FR4 footprint.
Does the SOT-363 package require solder paste stencil optimization?
Yes. The PG-SOT363 package uses a thermally enhanced leadframe with exposed die pad. Recommended stencil aperture is 0.15 mm thick with 80% area ratio; reflow profile must peak at 260 °C for ≤10 seconds to ensure void-free thermal pad wetting while maintaining RoHS-compliant intermetallic formation.
Can BSD816SNL6327HTSA1 replace a BSS138 in existing designs?
It can functionally replace BSS138 in 20 V-rated circuits but requires layout review: BSD816SN has dual-drain/dual-source pins (Pins 3/6 and 1/4), whereas BSS138 uses single-drain/single-source SOT-23. Pin mapping differs, and the higher 5.6 A pulsed rating may necessitate updated gate drive strength verification.
BSD816SNL6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6 nC @ 2.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BSD816SNL6327HTSA1 FAQ
1.How can I place an order for BSD816SNL6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSD816SNL6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSD816SNL6327HTSA1 reliable?
The price and inventory of BSD816SNL6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSD816SNL6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BSD816SNL6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSD816SNL6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSD816SNL6327HTSA1?
BSD816SNL6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSD816SNL6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSD816SNL6327HTSA1?
For technical support, including BSD816SNL6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSD816SNL6327HTSA1 requirements.
6.How does Aetrix verify that BSD816SNL6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BSD816SNL6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSD816SNL6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BSD816SNL6327HTSA1?
All BSD816SNL6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSD816SNL6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSD816SNL6327HTSA1 part is unused and in its original packaging.
Return procedure for BSD816SNL6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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