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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF024N03LT3GXUMA1

Name: BSF024N03LT3GXUMA1
Brand: Infineon Technologies
SKU: BSF024N03LT3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF024N03LT3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF024N03LT3GXUMA1.pdf

Description:: MOSFET N-CH 30V 15A/106A 2WDSON

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Product details

Overview

BSF024N03LT3GXUMA1 from Infineon Technologies is a 30 V, 106 A N-channel enhancement-mode Power-MOSFET in CanPAK^TM MG-WDSON-2 package, optimized for high-frequency DC/DC converters. It delivers 2.4 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche tested, and supports double-sided cooling for high-power density server VRMs and POL converters.

For engineers reviewing the BSF024N03LT3GXUMA1 datasheet, BSF024N03LT3GXUMA1 pinout, BSF024N03LT3GXUMA1 application, or BSF024N03LT3GXUMA1 equivalent, key selection criteria include its 2.4 mΩ on-resistance at 10 V gate drive, 53 nC total gate charge at 15 V, 100% R_G tested screening, and JEDEC-qualified reliability for industrial and computing power stages.

Technical Context

This MOSFET employs trench-gate OptiMOSTM3 technology with low parasitic inductance and symmetric source/drain layout to minimize switching losses in synchronous buck topologies. Its gate threshold voltage (1–2.2 V) enables robust turn-on control with standard 5 V or 10 V drivers, while the 0.7 mm profile supports ultra-thin PCB designs.

The device integrates a fast-recovery body diode with Q_rr = 28 nC and V_SD = 0.81–1.2 V at 30 A, enabling efficient reverse conduction in high-side switch configurations. Thermal resistance R_thJC is 1.0 K/W (bottom side), confirming suitability for direct thermal interface to heatsinks or copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input bus applications
R_DS(on) max	2.4 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous current
I_D continuous	106 A at T_C = 25 °C - Supports high-current point-of-load stages without parallel devices
Q_g total	53–71 nC at V_DD = 15 V - Determines gate driver power requirement and switching speed trade-off
E_AS	125 mJ single-pulse - Confirmed ruggedness against inductive load transients in VRM circuits
R_thJC	1.0 K/W (bottom) - Enables direct thermal coupling to heatsink or copper pour for >90 W dissipation
Q_rr	28 nC - Limits reverse recovery loss during high-frequency synchronous rectification

Pinout & Package

BSF024N03LT3GXUMA1 uses the CanPAK^TM MG-WDSON-2 package (ST footprint), a double-sided cooled, leadless surface-mount package with exposed drain on bottom and source/gate terminals on top. The package height is <0.7 mm and supports solder reflow per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Bottom Pad)	Main current path, thermally active	Exposed copper pad for direct thermal interface and high-current conduction; must be connected to PCB ground plane or heatsink
Source (Top Terminal)	Reference node for gate drive and current sensing	Low-inductance top-side connection for Kelvin source routing and accurate R_DS(on)-based current monitoring
Gate (Top Terminal)	Control electrode	Small-area top terminal requiring controlled impedance gate trace to suppress oscillation during 100+ kHz switching

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	127–170 nΩ·C - Enables high-efficiency operation at 500 kHz–1 MHz switching frequencies in server VRMs
Double-sided cooling	Simultaneous thermal path via top source and bottom drain - Reduces junction-to-ambient thermal resistance by up to 40% vs. standard SO-8
100% R_G tested	Gate resistance 0.2–0.8 Ω - Ensures consistent switching behavior and eliminates gate ringing risk across production lots
JEDEC qualification	Qualified per JESD22-A108 and J-STD-020 - Validated for industrial temperature range (-40 to 150 °C) and reflow reliability
Low-profile CanPAK^TM	Height <0.7 mm - Enables integration into space-constrained 1U server power supplies and telecom rectifiers

Applications

Server Point-of-Load Converters

Telecom Rectifier Modules

Use Scenario: High-current, high-frequency buck converter supplying CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase VRM, operating at 500–1000 kHz with 30–100 A per phase.

Use Value: 2.4 mΩ R_DS(on) and 53 nC Q_g reduce conduction + switching losses to <1.2 W per phase at 60 A, enabling >95% efficiency.

Use Scenario: Output stage of 48 V to 12 V intermediate bus converter in telecom base station power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp forward topology.

Use Value: 125 mJ E_AS and 100% avalanche testing ensure reliable operation under output short-circuit and line surge events.

Industrial Motor Drive Inverters

Automotive DC/DC Converters

Use Scenario: Half-bridge leg in compact 24 V servo drive inverters for robotics and CNC motion control.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter, driven by isolated gate driver with 10 V gate bias.

Use Value: 1.0 K/W R_thJC (bottom) allows direct mounting to aluminum heatsink, maintaining T_j < 125 °C at 45 A RMS with forced air.

Use Scenario: 48 V–12 V bidirectional DC/DC converter in mild hybrid vehicle energy recovery systems.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge, operating with ZVS at 200–300 kHz.

Use Value: 28 nC Q_rr and 0.81 V V_SD minimize reverse recovery loss and forward drop, improving light-load efficiency by 1.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 2.7 mΩ @ 10 V; Q_g = 42 nC; PQFN 5×6 mm package	Higher R_DS(on) increases conduction loss by ~12.5% at 60 A; lower Q_g improves switching speed	Preferred where gate drive capability is limited but thermal margin exists
SI7157DN-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 65 nC; PowerPAK^® 1212-8 package	Slightly lower R_DS(on) but higher Q_g raises switching loss; taller package limits board height	Selected when lowest possible on-resistance is critical and board thickness >1.0 mm

Compared with IRFH7107TRPBF and SI7157DN-T1-GE3, BSF024N03LT3GXUMA1 uniquely balances ultra-low R_DS(on), moderate Q_g, and sub-0.7 mm height-making it optimal for space-constrained, high-efficiency server and telecom POL designs where thermal path optimization is prioritized over minimal gate charge.

Availability

BSF024N03LT3GXUMA1 is available at Aetrix Electronics and suitable for server point-of-load converters, telecom rectifier modules, and industrial motor drive inverters requiring stable component supply and JEDEC-qualified reliability.

Supply support for BSF024N03LT3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM3 Power-MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in data center, telecom, and industrial power supplies where low R_DS(on), low Q_g, and advanced thermal packaging are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSF024N03LT3GXUMA1 has a specified operating junction temperature range of –40 °C to +150 °C. For continuous operation, the absolute maximum T_j is 150 °C. Derating is required above T_C = 25 °C per the P_tot vs. T_C curve; at T_C = 100 °C, continuous I_D drops to 67 A to maintain safe thermal margins.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V LLC resonant converter?

Yes. With its 2.4 mΩ R_DS(on), 28 nC Q_rr, and low V_SD (0.81 V), BSF024N03LT3GXUMA1 reduces both conduction and reverse recovery losses in secondary-side synchronous rectification. Its 100% avalanche rating also handles LLC transient overvoltage spikes without failure.

Does the CanPAK^TM package require special PCB layout considerations?

Yes. The exposed drain pad must be connected to a minimum 6 cm² copper area on inner or bottom layer for thermal performance. Top-side source and gate terminals require short, wide traces to minimize inductance; Kelvin source routing is recommended for accurate current sensing. Solder mask defined pads are advised for reliable reflow.

How does the 100% R_G test impact system-level reliability?

The 100% gate resistance screening ensures each unit falls within 0.2–0.8 Ω, eliminating outliers that cause inconsistent turn-on timing, shoot-through risk, or gate driver overstress. This directly improves phase current balance in multiphase VRMs and extends gate driver IC lifetime in high-volume production.

BSF024N03LT3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF024N03LT3GXUMA1 FAQ

1.How can I place an order for BSF024N03LT3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF024N03LT3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF024N03LT3GXUMA1 reliable?

The price and inventory of BSF024N03LT3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF024N03LT3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSF024N03LT3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF024N03LT3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF024N03LT3GXUMA1?

BSF024N03LT3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF024N03LT3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF024N03LT3GXUMA1?

For technical support, including BSF024N03LT3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF024N03LT3GXUMA1 requirements.

6.How does Aetrix verify that BSF024N03LT3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSF024N03LT3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF024N03LT3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSF024N03LT3GXUMA1?

All BSF024N03LT3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSF024N03LT3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF024N03LT3GXUMA1 part is unused and in its original packaging.

Return procedure for BSF024N03LT3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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