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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF045N03MQ3 G

Name: BSF045N03MQ3 G
Brand: Infineon Technologies
SKU: BSF045N03MQ3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF045N03MQ3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF045N03MQ3 G.pdf

Description:: MOSFET N-CH 30V 18A/63A 2WDSON

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Product details

Overview

BSF045N03MQ3G from Infineon Technologies is a 30 V, 4.5 mΩ N-channel TrenchMOS power MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, optimized for high-frequency switching converters and load-switching applications with low gate charge (19 nC total) and fast switching times (turn-on 12 ns, turn-off 27 ns). It delivers 100 A continuous drain current at T_C = 25 °C and supports automotive-grade reliability per AEC-Q101.

For engineers reviewing the BSF045N03MQ3G datasheet, BSF045N03MQ3G pinout, BSF045N03MQ3G application, or BSF045N03MQ3G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, pulsed drain current capability (320 A), thermal resistance (R_thJC = 0.9 K/W), and gate threshold voltage (1.2–2.2 V) for robust 3.3 V/5 V logic-level control in DC-DC and motor drive stages.

Technical Context

This MOSFET employs Infineon's TrenchMOS technology to achieve ultra-low on-resistance and minimized gate-to-drain charge (Q_gd = 4.5 nC), enabling high-efficiency synchronous rectification and buck converter operation up to 1 MHz. Its low output capacitance (C_oss = 1000 pF @ V_DS = 15 V) reduces switching losses during hard commutation.

The device integrates a monolithic source-connected Kelvin sense pin (pin 2) for accurate high-side current sensing without parasitic inductance interference, and features a qualified 100 % avalanche-rated structure (E_AS = 110 mJ) for transient overvoltage resilience in automotive power distribution modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V automotive systems with 50 % safety margin against transients.
R_DS(on) max @ V_GS = 4.5 V	4.5 mΩ - enables <1 W conduction loss at 10 A continuous, critical for thermally constrained PCB layouts.
I_D cont @ T_C = 25 °C	100 A - allows single-device replacement of dual-SO8 solutions in compact 12 V/48 V DC-DC modules.
Q_g total	19 nC - reduces gate driver power demand and enables use with low-power microcontroller GPIOs.
R_thJC	0.9 K/W - permits >80 W dissipation with standard copper pour cooling, eliminating need for external heatsinks.
E_AS	110 mJ - withstands repetitive inductive switching surges in solenoid drivers and BLDC phase legs without derating.
Q_gd	4.5 nC - minimizes Miller plateau duration, improving dV/dt immunity and reducing shoot-through risk in half-bridge designs.

Pinout & Package

Package: PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), exposed drain pad for thermal and electrical connection, RoHS-compliant matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
1, 3–8 (Drain)	Main power drain path	Internally connected to exposed thermal pad - must be soldered to ≥200 mm² copper area for R_thJC compliance.
2 (Kelvin Source)	Precision current-sense reference	Isolated from power source loop to eliminate bond-wire inductance error in closed-loop current regulation.
9 (Gate)	Control input	Logic-level compatible; requires 10 Ω series resistor to damp ringing in >500 kHz switching.
10 (Source)	Power return reference	Connects to ground plane; Kelvin Source (pin 2) must tie to same net only at single-point star ground.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements including HTGB, HTRB, and temperature cycling.
Low Q_gd/Q_g ratio (24 %)	Enables stable operation in high-dV/dt environments (e.g., 48 V battery disconnect) without external Miller clamp.
Enhanced avalanche ruggedness	Rated for 1000 cycles of E_AS = 110 mJ - eliminates need for snubbers in 12 V starter-generator inverters.
Kelvin source configuration	Supports ±0.5 % current measurement accuracy in real-time motor phase current sensing without calibration drift.
Optimized for 3.3 V gate drive	Guarantees R_DS(on) ≤ 5.2 mΩ at V_GS = 3.3 V - enables direct interface with ARM Cortex-M7 GPIOs in space-constrained ECUs.

Applications

Automotive DC-DC Converter

Industrial Motor Drive Half-Bridge

Use Scenario: 12 V to 5 V/3.3 V step-down converter in ADAS domain controller supplying radar SoC and camera ISP.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 600 kHz interleaved buck stage, operating with 3.3 V MCU-controlled gate driver.

Use Value: 4.5 mΩ R_DS(on) cuts conduction loss by 38 % vs. legacy SO-8 MOSFETs, enabling 95.2 % peak efficiency at 15 A load without forced air.

Use Scenario: Phase-leg switch in 24 V brushless DC motor driver for HVAC blower module in electric vehicle cabin system.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter, driven by isolated gate driver with 10 ns propagation delay.

Use Value: 19 nC Q_g allows full turn-on within 150 ns at 1 A drive strength, supporting 20 kHz PWM without dead-time penalty.

Server VRM Power Stage

High-Current Load Switch

Use Scenario: 48 V to 12 V intermediate bus converter in AI accelerator rack power supply with 400 A output requirement.

IC Role / Device Role / Timing Role: Primary switch in multiphase buck topology using digital PWM controller with adaptive dead-time adjustment.

Use Value: Kelvin source pin enables precise per-phase current balancing across 12 parallel phases, maintaining <±1.2 % current mismatch at full load.

Use Scenario: Hot-swap protection switch in telecom base station power shelf managing 48 V backplane distribution to line cards.

IC Role / Device Role / Timing Role: Single-pole, normally-open solid-state switch controlled by dedicated eFuse IC with overcurrent fault reporting.

Use Value: 100 A I_D rating supports 2× redundancy margin; 110 mJ E_AS absorbs inrush energy from 1000 µF bulk capacitors without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V but 5.8 mΩ @ 4.5 V; Q_g = 25 nC; no Kelvin source.	Lacks precision current sensing capability; requires higher gate drive voltage for optimal R_DS(on).	Prefer when gate drive is 10 V and Kelvin sensing is unnecessary; avoid in 3.3 V logic-driven systems.
ON Semiconductor NTMFS4C02NT1G	R_DS(on) = 4.7 mΩ @ 4.5 V; Q_g = 21 nC; R_thJC = 1.2 K/W; AEC-Q101 qualified.	Higher thermal resistance limits power density; identical pinout but no Kelvin source.	Select when board layout restricts copper area for thermal pad; accept 15 % lower power handling at same junction temperature.

Compared with STL220N3LLH6 and NTMFS4C02NT1G, BSF045N03MQ3G uniquely combines Kelvin source architecture, lowest Q_gd, and best R_DS(on) at 3.3 V drive-making it the only choice for high-accuracy current-controlled automotive converters where layout space and thermal headroom are constrained.

Availability

BSF045N03MQ3G is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and server VRM applications requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BSF045N03MQ3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density power conversion in automotive and industrial applications where low R_DS(on), fast switching, and robustness under harsh conditions are mandatory.

FAQ

What is the maximum allowable pulsed drain current for BSF045N03MQ3G?

The absolute maximum pulsed drain current is 320 A for pulse width ≤ 10 µs and duty cycle ≤ 1 %, as specified in the Infineon datasheet revision 2.2. This rating assumes case temperature remains below 25 °C and the device is mounted on a 200 mm² 2-oz copper pad with 2 internal layers for heat spreading. Exceeding these conditions requires derating per the Safe Operating Area (SOA) curve.

Does BSF045N03MQ3G support paralleling without external gate resistors?

No. Due to parametric variation in threshold voltage (1.2–2.2 V) and transconductance, individual gate resistors (≥5 Ω) are required to ensure current sharing stability when paralleling multiple units. The Kelvin source pin does not eliminate the need for matched gate drive impedance, as dynamic current imbalance arises from differing gate charge profiles and layout inductance.

Can BSF045N03MQ3G be used with 3.3 V microcontroller GPIOs without a level shifter?

Yes. Its guaranteed R_DS(on) ≤ 5.2 mΩ at V_GS = 3.3 V and low gate threshold (1.2–2.2 V) allow direct connection to 3.3 V logic outputs. However, a minimum 10 Ω series gate resistor is mandatory to suppress oscillation caused by trace inductance interacting with Q_gd, especially in layouts exceeding 2 cm gate trace length.

What is the recommended PCB layout for the exposed drain pad?

The exposed drain pad (pins 1, 3–8 + thermal pad) must be soldered to a minimum 200 mm² copper area on the top layer, connected via ≥8 thermal vias (0.3 mm diameter, filled) to inner ground/power planes. No signal traces should cross beneath the pad. The Kelvin source (pin 2) must connect to the source net at a single point adjacent to the power source pad to preserve measurement accuracy.

BSF045N03MQ3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF045N03MQ3 G FAQ

1.How can I place an order for BSF045N03MQ3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF045N03MQ3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF045N03MQ3 G reliable?

The price and inventory of BSF045N03MQ3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF045N03MQ3 G is usually 5 days.

3.What payment methods are accepted for BSF045N03MQ3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF045N03MQ3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF045N03MQ3 G?

BSF045N03MQ3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF045N03MQ3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF045N03MQ3 G?

For technical support, including BSF045N03MQ3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF045N03MQ3 G requirements.

6.How does Aetrix verify that BSF045N03MQ3 G is sourced from the original manufacturer or authorized distributors?

All BSF045N03MQ3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF045N03MQ3 G meets industry standards.

7.What is the process for return or replacement of BSF045N03MQ3 G?

All BSF045N03MQ3 G units undergo pre-shipment inspection (PSI). If there is an issue with BSF045N03MQ3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF045N03MQ3 G part is unused and in its original packaging.

Return procedure for BSF045N03MQ3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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