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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF050N03LQ3GXUMA1

Name: BSF050N03LQ3GXUMA1
Brand: Infineon Technologies
SKU: BSF050N03LQ3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF050N03LQ3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF050N03LQ3GXUMA1.pdf

Description:: MOSFET N-CH 30V 15A/60A 2WDSON

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Product details

Overview

BSF050N03LQ3GXUMA1 from Infineon Technologies is an n-channel 30 V Power MOSFET in MG-WDSON-2 package, optimized for high-frequency synchronous buck converters. It delivers R_DS(on) = 4.2 mΩ (typ) at V_GS = 10 V, Q_g = 25 nC (typ), and Q_oss = 18 nC - enabling high-efficiency, low-loss operation in server VRMs and point-of-load regulators.

For engineers reviewing the BSF050N03LQ3GXUMA1 datasheet, BSF050N03LQ3GXUMA1 pinout, BSF050N03LQ3GXUMA1 application, or BSF050N03LQ3GXUMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure of merit, double-sided cooling capability, avalanche ruggedness (E_AS = 20 mJ), and compatibility with DirectFET® SQ footprint layouts.

Technical Context

This MOSFET employs Infineon's OptiMOS™30V technology, featuring a trench-gate superjunction structure optimized for DC/DC control FETs in multiphase VRMs. Its low Q_gd/Q_g ratio (2.7/25 nC) supports fast, low-loss switching with reduced Miller effect, while the 0.7 mm profile enables compact thermal stacking in high-density power modules.

The device integrates a robust body diode with Q_rr = 16 nC and V_SD = 0.86 V (typ) at I_F = 20 A, supporting efficient synchronous rectification. Thermal design leverages both bottom-side (R_thJC = 1.0 K/W) and top-side cooling paths, validated per JEDEC J-STD-20 and JESD22 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input VRM stages and 5 V/3.3 V point-of-load rails
R_DS(on) max	5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous drain current
I_D cont	60 A @ T_C = 25 °C - Supports high-current phases in server CPU/GPU VRMs
Q_g	25 nC @ V_GS = 0–10 V - Low gate drive energy reduces controller IC loading and EMI
Q_oss	18 nC @ V_DD = 15 V - Minimizes turn-off loss and improves light-load efficiency in hard-switched topologies
E_AS	20 mJ - Confirmed single-pulse avalanche capability ensures reliability during transient overvoltage events
R_thJC	1.0 K/W (bottom) - Enables direct thermal interface to heatsink or PCB copper, critical for >300 W/in² power density

Pinout & Package

BSF050N03LQ3GXUMA1 uses the MG-WDSON-2 package - a 3.3 mm × 3.3 mm, 0.7 mm low-profile, double-sided cooling DirectFET®-compatible outline with exposed drain on both top and bottom surfaces.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top & Bottom)	Power output node / heat transfer surface	Double-sided copper pads enable simultaneous thermal path to heatsink and PCB plane - essential for high-power density VRMs
Source (S1/S2)	Reference node for gate drive and current sensing	Two parallel source terminals reduce parasitic inductance and improve current sharing in paralleled configurations
Gate (G)	Control input for channel modulation	Low R_G (0.4 Ω typ) and low C_iss (2250 pF typ) support clean 1–2 MHz switching with minimal gate driver stress

Key Features

Feature	Design Value
Optimized for >1 MHz DC/DC converters	Q_g/R_DS(on) FOM = 5.95 Ω·nC - among lowest in 30 V class for minimal switching + conduction loss tradeoff
100% avalanche tested	Single-pulse E_AS = 20 mJ verified - eliminates need for external clamping in VRM transient protection
Double-sided cooling	R_thJC = 1.0 K/W (bottom) + top-side thermal access - enables >50% higher power handling vs. standard SO-8
Low-profile (<0.7 mm)	Enables stacked power stage designs with adjacent components - critical for ultra-thin server DIMMs and OCP modules
Compatible with DirectFET® SQ footprint	Drop-in mechanical replacement for legacy DirectFET® devices - preserves layout investment and thermal stack-up

Applications

Server On-Board Voltage Regulator

Synchronous Rectification in POL Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role: Control FET in high-side switching position, operating at 500 kHz–1.5 MHz with 10–60 A per phase.

Use Value: 4.2 mΩ R_DS(on) and 25 nC Q_g reduce total power loss by ≥12% vs. prior-gen 30 V MOSFETs at 1 MHz, improving VRM efficiency from 92% to 93.5%.

Use Scenario: Secondary-side switch in isolated forward or active-clamp forward converters for 12 V → 1.8 V conversion in AI accelerator cards.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: V_SD = 0.86 V and Q_rr = 16 nC minimize reverse recovery loss and forward conduction loss - increasing full-load efficiency by 1.8% over 45 V Schottky solutions.

High-Density Point-of-Load Module

Power Management for HPC ASICs

Use Scenario: Integrated power stage in 5 mm × 5 mm µModule delivering up to 40 A at 0.8 V for FPGA I/O banks.

IC Role / Device Role: Half-bridge switch in stacked dual-die configuration with shared thermal pad.

Use Value: 0.7 mm height and double-sided cooling allow vertical thermal stacking - achieving 450 W/in² power density without forced airflow.

Use Scenario: Multiphase VRM supplying variable voltage (0.6–1.2 V) to next-gen HPC ASICs with dynamic current slew rates >200 A/µs.

IC Role / Device Role: High-speed control FET with low Q_gd (2.7 nC) to suppress shoot-through risk during fast dV/dt transitions.

Use Value: Low Miller charge delays turn-on less than 3.4 ns and limits voltage overshoot during load transients - maintaining ±15 mV regulation window under 50 A/µs steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 22 nC; no top-side cooling; SO-8FL package	Limited to single-sided cooling; lower thermal headroom above 40 A	Preferred where board space allows larger footprint and thermal budget permits higher R_thJA
DMTH3004LPSQ-13	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 29 nC; PowerDI5060 package; no top-side drain	Higher gate charge increases driver loss; no double-sided thermal path	Selected when lowest R_DS(on) dominates over switching loss and thermal constraints are relaxed

Compared with IRF6642TRPBF and DMTH3004LPSQ-13, BSF050N03LQ3GXUMA1 uniquely balances ultra-low R_DS(on), moderate Q_g, and dual thermal interfaces - making it optimal for thermally constrained, high-frequency VRMs where both conduction and switching losses must be minimized simultaneously.

Availability

BSF050N03LQ3GXUMA1 is available at Aetrix Electronics and suitable for server voltage regulation, high-performance computing power management, and synchronous rectification requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSF050N03LQ3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the OptiMOS™30V product line - engineered specifically for high-efficiency, high-power-density DC/DC conversion in datacenter and telecom infrastructure, targeting JEDEC-qualified reliability under sustained thermal stress.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSF050N03LQ3GXUMA1 supports 38 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the MG-WDSON-2 package and ensures safe operation in high-ambient server environments without forced cooling.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage V_GS(th) ranges from 1.0 V to 2.2 V, and the device fully turns off with V_GS = 0 V. A negative gate voltage is not required; however, applying –5 V can improve noise immunity in high-dV/dt environments typical of multiphase VRMs.

Is the body diode suitable for synchronous rectification at 1 MHz?

Yes. With Q_rr = 16 nC and t_rr < 45 ns (derived from Q_rr/di/dt), the integrated body diode supports synchronous rectification up to 1.2 MHz in hard-switched topologies. Its low V_SD = 0.86 V also minimizes forward conduction loss relative to discrete Schottky alternatives.

Can BSF050N03LQ3GXUMA1 be mounted upside-down for top-side cooling only?

No. The MG-WDSON-2 package requires soldering both top and bottom drain pads to copper planes for rated thermal performance. Mounting upside-down voids the R_thJC = 1.0 K/W specification and risks thermal runaway at >25 A due to insufficient heat extraction from the die.

BSF050N03LQ3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 28W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF050N03LQ3GXUMA1 FAQ

1.How can I place an order for BSF050N03LQ3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF050N03LQ3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF050N03LQ3GXUMA1 reliable?

The price and inventory of BSF050N03LQ3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF050N03LQ3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSF050N03LQ3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF050N03LQ3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF050N03LQ3GXUMA1?

BSF050N03LQ3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF050N03LQ3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF050N03LQ3GXUMA1?

For technical support, including BSF050N03LQ3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF050N03LQ3GXUMA1 requirements.

6.How does Aetrix verify that BSF050N03LQ3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSF050N03LQ3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF050N03LQ3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSF050N03LQ3GXUMA1?

All BSF050N03LQ3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSF050N03LQ3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF050N03LQ3GXUMA1 part is unused and in its original packaging.

Return procedure for BSF050N03LQ3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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