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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF077N06NT3GXUMA1

Name: BSF077N06NT3GXUMA1
Brand: Infineon Technologies
SKU: BSF077N06NT3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF077N06NT3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF077N06NT3GXUMA1.pdf

Description:: MOSFET N-CH 60V 13A/56A 2WDSON

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Product details

Overview

BSF077N06NT3GXUMA1 from Infineon Technologies is an n-channel 60 V Power MOSFET in MG-WDSON-2 (DirectFET®-compatible) package, optimized for high-efficiency DC/DC converters and synchronous rectification. It delivers R_DS(on) = 7.7 mΩ max at V_GS = 10 V, Q_g = 34 nC typ, Q_oss = 28 nC, and supports 56 A continuous drain current at T_C = 25 °C - enabling compact, high-frequency power stages in server and telecom PSUs.

For engineers reviewing the BSF077N06NT3GXUMA1 datasheet, BSF077N06NT3GXUMA1 pinout, BSF077N06NT3GXUMA1 application, or BSF077N06NT3GXUMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), top-side cooling capability, avalanche ruggedness (150 mJ E_AS), thermal resistance (R_thJC = 1.0 K/W bottom), and DirectFET® footprint compatibility.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 60 V silicon technology with ultra-low parasitic inductance packaging. Its low Q_g/Q_gd ratio and 5.2 V gate plateau voltage support fast, controllable switching in hard-switched and synchronous rectifier topologies.

The MG-WDSON-2 package enables double-sided cooling - thermal path through both bottom copper pad and top metal can - and achieves R_thJA = 58 K/W on a 6 cm² FR4 PCB, making it suitable for high-power-density board layouts where thermal management is constrained.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - rated blocking voltage for 48 V input bus systems with margin
R_DS(on), max	7.7 mΩ at V_GS = 10 V - enables <1 W conduction loss at 30 A
I_D, cont	56 A at T_C = 25 °C - supports high-current POL stages without parallel devices
Q_g, typ	34 nC - reduces gate drive power and enables >1 MHz operation with moderate driver strength
E_AS	150 mJ - ensures robustness against inductive switching stress in motor drives and SMPS
R_thJC	1.0 K/W (bottom) - allows direct heatsink mounting for high-power thermal extraction
Q_oss	28 nC - minimizes turn-off energy loss in high-voltage clamping conditions

Pinout & Package

MG-WDSON-2 is a surface-mount, low-profile (<0.7 mm) DirectFET®-licensed package with top-side metal can for thermal transfer and bottom-source/drain terminals. It features double-sided cooling and minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Can	Drain	Primary high-current drain connection; thermally coupled to heatsink via top-side cooling
Bottom Pad (Large)	Source	Main source terminal; soldered to PCB ground plane for low-inductance return path
Bottom Pad (Small)	Gate	Isolated gate input; requires controlled trace routing to minimize ringing

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	262 nC·mΩ - balances switching and conduction losses for 300–1000 kHz DC/DC designs
100% avalanche tested	150 mJ single-pulse rating - eliminates need for external snubbers in inductive load switching
Double-sided cooling	Simultaneous top-can (drain) and bottom-pad (source) thermal paths - improves power density by >30% vs. standard SO-8
Low-profile MG-WDSON-2	Height < 0.7 mm - enables ultra-thin power modules and stacked PCB assemblies
JEDEC-qualified	Complies with J-STD-020 (reflow) and JESD22 (reliability) - validated for industrial temperature cycling

Applications

Server VRMs

Telecom 48 V DC/DC

Use Scenario: Point-of-load regulation in dual-processor server motherboards with 40 A+ per phase.

IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck converter.

Use Value: 7.7 mΩ R_DS(on) and 34 nC Q_g reduce total power loss to <1.2 W per phase at 30 A, enabling 95%+ efficiency.

Use Scenario: Isolated forward or active-clamp forward converter in 48 V telecom rectifiers.

IC Role / Device Role: Primary-side switching MOSFET handling 60 V bus transients and high di/dt.

Use Value: Low Q_oss (28 nC) and 1.0 K/W R_thJC minimize turn-off loss and junction temperature rise during 500 kHz switching.

Industrial Motor Drives

Automotive Body Control Modules

Use Scenario: Half-bridge inverter for 24 V BLDC fans and pumps in factory automation.

IC Role / Device Role: Low-side switch with integrated reverse diode for PWM commutation.

Use Value: 150 mJ E_AS withstands inductive kickback without external freewheeling diodes; V_SD = 0.9 V ensures low-loss freewheeling.

Use Scenario: Load switch for 12 V/24 V lighting and solenoid control in BCMs.

IC Role / Device Role: Protected high-current power distribution switch with fast fault response.

Use Value: 56 A I_D rating and 100% avalanche test enable single-device replacement of mechanical relays, reducing BOM count and failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7759L2TRPBF	R_DS(on) = 7.0 mΩ (lower), Q_g = 42 nC (higher), SO-8 package, no top-side cooling	Limited thermal headroom above 30 A due to higher R_thJA (62 K/W); unsuitable for >500 kHz with tight thermal budget	Prefer when board space allows SO-8 and gate drive strength supports higher Q_g
STL220N6F7	R_DS(on) = 7.5 mΩ, Q_g = 31 nC, PowerFLAT™ 5x6 package, R_thJC = 1.2 K/W	No top-side cooling; relies solely on PCB copper; less effective in constrained airflow environments	Prefer when cost sensitivity outweighs thermal performance and top-side heatsinking is unavailable

Compared with IRF7759L2TRPBF and STL220N6F7, BSF077N06NT3GXUMA1 offers superior thermal extraction via dual-sided cooling and lower Q_g×R_DS(on) FOM - delivering higher efficiency in space-constrained, high-frequency, high-current applications where junction temperature must stay below 125 °C.

Availability

BSF077N06NT3GXUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for BSF077N06NT3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors - with over 30 years of MOSFET innovation and manufacturing excellence.

This device belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial automation systems.

FAQ

What is the maximum operating temperature for BSF077N06NT3GXUMA1?

The device supports junction temperatures from –40 °C to +150 °C per IEC climatic category DIN IEC 68-1. Continuous operation at T_j = 150 °C is permitted only under derated current conditions - e.g., I_D ≤ 13 A at T_C = 100 °C - as defined in Table 2 of the preliminary datasheet.

Does BSF077N06NT3GXUMA1 require a gate resistor for stability?

Yes - a gate resistor (typically 1.6 Ω, as used in datasheet switching characterization) is recommended to dampen gate ringing caused by low package inductance and PCB trace inductance. Omitting it may cause overshoot, shoot-through, or oscillation in high-di/dt applications like multiphase VRMs.

Can BSF077N06NT3GXUMA1 be used in avalanche mode intentionally?

No - while 100% tested for single-pulse E_AS = 150 mJ, the device is not rated for repetitive avalanche operation. Intended use is in hard-switched or synchronous rectifier configurations where voltage transients are clamped externally or absorbed within safe SOA limits.

Is the MG-WDSON-2 package compatible with standard reflow profiles?

Yes - it is qualified per J-STD-020, supporting peak reflow temperatures up to 260 °C for ≤ 30 seconds. The Pb-free, halogen-free construction and robust die attach ensure reliability under standard lead-free reflow cycles used in industrial and telecom assembly lines.

BSF077N06NT3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 33µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 38W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF077N06NT3GXUMA1 FAQ

1.How can I place an order for BSF077N06NT3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF077N06NT3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF077N06NT3GXUMA1 reliable?

The price and inventory of BSF077N06NT3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF077N06NT3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSF077N06NT3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF077N06NT3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF077N06NT3GXUMA1?

BSF077N06NT3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF077N06NT3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF077N06NT3GXUMA1?

For technical support, including BSF077N06NT3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF077N06NT3GXUMA1 requirements.

6.How does Aetrix verify that BSF077N06NT3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSF077N06NT3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF077N06NT3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSF077N06NT3GXUMA1?

All BSF077N06NT3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSF077N06NT3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF077N06NT3GXUMA1 part is unused and in its original packaging.

Return procedure for BSF077N06NT3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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