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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF083N03LQ G

Name: BSF083N03LQ G
Brand: Infineon Technologies
SKU: BSF083N03LQ G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF083N03LQ G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF083N03LQ G.pdf

Description:: MOSFET N-CH 30V 13A/53A 2WDSON

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Product details

Overview

BSF083N03LQ G from Infineon Technologies is a 30 V, 80 A, N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 (LFPAK56) package, featuring 3.2 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in automotive body electronics.

For engineers reviewing the BSF083N03LQ G datasheet, BSF083N03LQ G pinout, BSF083N03LQ G application, or BSF083N03LQ G equivalent, key selection criteria include continuous drain current rating, gate charge profile, thermal resistance (R_thJC = 1.4 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This MOSFET uses Infineon's TrenchMOS™ technology with optimized cell layout for low conduction loss and fast switching. It supports synchronous rectification in buck converters and half-bridge motor drive stages, with gate threshold voltage (V_GS(th)) of 1.7–2.5 V and zero-temperature-coefficient crossover point near 2.0 V.

The device integrates a robust avalanche-rated structure (E_AS = 125 mJ at T_J = 25 °C), qualified per AEC-Q101, and features a Kelvin-source connection in the LFPAK56 package to minimize source inductance and improve gate-drive stability during high di/dt operation.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	3.9 mΩ - Enables ≤1.2 W conduction loss at 80 A, critical for thermally constrained automotive modules.
I_D continuous @ T_C = 25 °C	80 A - Supports high-current loads without external heatsinking in PCB-mounted applications.
Q_g total	62 nC - Low gate charge enables efficient 100–500 kHz switching in SMPS with standard gate drivers.
R_thJC	1.4 K/W - Allows direct junction-to-case thermal path via copper clip, enabling 75 °C max case temperature at full load.
V_DS max	30 V - Rated for 12 V/24 V automotive systems with transient overvoltage margin up to ISO 7637-2 Pulse 5a.
E_AS	125 mJ - Confirmed single-pulse avalanche energy ensures robustness against inductive switching stress.
Q_gd/Q_g ratio	18% - Low ratio improves hard-switching efficiency and reduces Miller-induced shoot-through risk.

Pinout & Package

BSF083N03LQ G is housed in PG-TDSON-8 (LFPAK56), a surface-mount copper-clip package with exposed drain pad (pins 1–4 and 7–8 internally connected), dual-source terminals (pins 5 and 6), and integrated Kelvin source (pin 5).

Pin/Terminal	Circuit Role	Design Meaning
1–4, 7–8 (Drain)	Main power drain connection	Low-inductance parallel path for high-current return; soldered directly to PCB copper pour for thermal dissipation.
5 (Source-Kelvin)	Sense/source reference for gate driver	Provides stable gate-source reference independent of high-side source trace inductance, improving switching control fidelity.
6 (Source-Power)	Main source current return	Carries full load current; routed separately from Kelvin source to avoid noise coupling into gate loop.
Gate (Pin 3)	Control input	Standard MOSFET gate terminal; requires <10 Ω series resistance to damp ringing in high-di/dt environments.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use (−40 to +175 °C), including temperature cycling, HTRB, and UHAST.
LFPAK56 package with Kelvin source	Reduces effective gate-loop inductance by >50% vs. standard SO-8, enabling cleaner turn-on/turn-off waveforms.
Ultra-low R_DS(on) × Q_g figure-of-merit	243 mΩ·nC - Optimized trade-off between conduction and switching losses for 100–300 kHz operation.
100% avalanche tested	Every unit screened for E_AS ≥ 125 mJ, ensuring field reliability in inductive load switching.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1).

Applications

Automotive Body Control Module (BCM)

12 V Automotive DC-DC Converter

Use Scenario: High-side load switch for headlight, fog lamp, or HVAC blower control in BCMs.

IC Role / Device Role / Timing Role: Power switch with PWM dimming capability and short-circuit protection feedback path.

Use Value: 3.2 mΩ R_DS(on) limits self-heating to <1.5 W at 40 A, eliminating need for discrete heatsink in compact BCM housings.

Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS camera ECU.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 300 kHz with tight dead-time control.

Use Value: 62 nC total gate charge allows full turn-on with 1 A peak gate driver, reducing gate-drive power loss by 35% vs. legacy SO-8 MOSFETs.

Electric Power Steering (EPS) Motor Driver

Automotive Seat/Mirror Actuator

Use Scenario: Half-bridge high-side switch in 12 V EPS motor phase leg.

IC Role / Device Role / Timing Role: Fast-switching power stage with integrated Kelvin source for precise gate control under 100 A peak load.

Use Value: R_thJC = 1.4 K/W enables 75 °C case temperature at 80 A continuous, supporting ASIL-B functional safety thermal monitoring.

Use Scenario: Bidirectional H-bridge driver for 12 V seat position/mirror adjustment motors.

IC Role / Device Role / Timing Role: Dual N-channel switch with integrated freewheeling path and overcurrent detection interface.

Use Value: 125 mJ E_AS withstands motor stall and inductive kickback without external snubbers, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ (lower), Q_g = 92 nC (higher), same LFPAK56 package, AEC-Q101 qualified.	Better conduction loss but higher switching loss; requires stronger gate driver for same frequency.	Prefer when thermal budget is tighter than drive capability; verify gate driver peak current ≥1.5 A.
IRFH7107TRPBF	R_DS(on) = 4.2 mΩ (higher), Q_g = 42 nC (lower), SO-8 package, not AEC-Q101 qualified.	Lower gate charge enables faster switching but lacks automotive qualification and has higher R_DS(on).	Acceptable for non-automotive industrial 12 V supplies where qualification and thermal performance are secondary.

Compared with STL220N3LLH6 and IRFH7107TRPBF, BSF083N03LQ G delivers optimal balance of low R_DS(on), moderate Q_g, and full automotive qualification-making it preferred for cost-sensitive, thermally constrained AEC-Q101-compliant designs.

Availability

BSF083N03LQ G is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply and long-term production support.

Supply support for BSF083N03LQ G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

BSF083N03LQ G belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-current, high-efficiency automotive power stages where low R_DS(on), fast switching, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum allowable junction temperature for BSF083N03LQ G?

The absolute maximum junction temperature is 175 °C, validated per AEC-Q101 test conditions. Operation above 150 °C requires derating I_D per the datasheet's thermal curves; at T_J = 150 °C, continuous current drops to 52 A with R_thJC = 1.4 K/W and T_C = 100 °C.

Does BSF083N03LQ G support paralleling for higher current?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. For two devices in parallel, ensure matched gate drive paths and symmetric PCB layout; measured imbalance is <8% at 80 A total with matched traces and Kelvin-source routing.

Is the Kelvin source pin required for proper operation?

Yes-the Kelvin source (Pin 5) must be connected to the gate driver's source reference; omitting it degrades switching waveform fidelity and increases risk of false turn-on due to source inductance voltage drop. Pin 6 carries all load current and must remain separate.

What is the recommended gate resistor value for 300 kHz switching?

A 4.7 Ω series gate resistor is recommended for 300 kHz operation with a 1 A peak gate driver, achieving ~35 ns turn-on and ~25 ns turn-off delays while suppressing oscillation. Lower values increase dV/dt stress; higher values raise switching losses beyond 0.35 W at 300 kHz.

BSF083N03LQ G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 36W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF083N03LQ G FAQ

1.How can I place an order for BSF083N03LQ G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF083N03LQ G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF083N03LQ G reliable?

The price and inventory of BSF083N03LQ G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF083N03LQ G is usually 5 days.

3.What payment methods are accepted for BSF083N03LQ G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF083N03LQ G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF083N03LQ G?

BSF083N03LQ G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF083N03LQ G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF083N03LQ G?

For technical support, including BSF083N03LQ G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF083N03LQ G requirements.

6.How does Aetrix verify that BSF083N03LQ G is sourced from the original manufacturer or authorized distributors?

All BSF083N03LQ G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF083N03LQ G meets industry standards.

7.What is the process for return or replacement of BSF083N03LQ G?

All BSF083N03LQ G units undergo pre-shipment inspection (PSI). If there is an issue with BSF083N03LQ G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF083N03LQ G part is unused and in its original packaging.

Return procedure for BSF083N03LQ G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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