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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF450NE7NH3XUMA1

Name: BSF450NE7NH3XUMA1
Brand: Infineon Technologies
SKU: BSF450NE7NH3XUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF450NE7NH3XUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF450NE7NH3XUMA1.pdf

Description:: MOSFET N-CH 75V 5A/15A 2WDSON

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Inventory:4,375

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Product details

Overview

BSF450NE7NH3XUMA1 from Infineon Technologies is an N-channel 75 V OptiMOS™3 Power-MOSFET in CanPAK S package, optimized for high-efficiency DC/DC converters. It delivers R_DS(on) ≤ 45 mΩ at V_GS = 10 V, 15 A continuous drain current, and 100% avalanche tested ruggedness for automotive and industrial power stages.

For engineers reviewing the BSF450NE7NH3XUMA1 datasheet, BSF450NE7NH3XUMA1 pinout, BSF450NE7NH3XUMA1 application, or BSF450NE7NH3XUMA1 equivalent, key selection criteria include its dual-sided cooling capability, low-profile <0.7 mm height, gate charge × R_DS(on) figure-of-merit, JEDEC-qualified reliability, and compatibility with DirectFET® ST footprint.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced parasitic inductance to support fast switching in synchronous buck converters. Its dual-sided thermal interface enables simultaneous top-side and bottom-side PCB copper cooling, lowering junction-to-ambient thermal resistance to 58 K/W on standard FR4.

The device features a gate threshold voltage of 2.3–3.8 V (typ. 3.1 V), 6 nC total gate charge, and 22 pF reverse transfer capacitance - enabling efficient operation at 500 kHz–1 MHz switching frequencies while maintaining low EMI and conduction losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage suitable for 48 V input bus systems and automotive 60 V transients.
R_DS(on), max	45 mΩ @ V_GS = 10 V - Enables ≤ 5.4 W conduction loss at 15 A, critical for thermally constrained DC/DC phases.
I_D, cont	15 A @ T_C = 25 °C - Supports high-current power stages without external heatsinking in compact layouts.
Q_g	6 nC - Low gate drive energy reduces driver IC loading and improves efficiency at high-frequency operation.
R_thJC (bottom)	1.0 K/W - Enables direct thermal coupling to PCB ground plane for high-power density designs.
E_AS	17 mJ - Confirmed single-pulse avalanche robustness ensures reliability during load dump or inductive turn-off events.
C_iss	390 pF - Predictable input capacitance supports stable gate drive design and snubberless layout.

Pinout & Package

BSF450NE7NH3XUMA1 uses the CanPAK S surface-mount package (MG-WDSON-2 0307 outline), measuring <0.7 mm height with exposed top and bottom thermal pads for dual-sided cooling. The package is RoHS-compliant and compatible with DirectFET® ST footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Pad)	Power output node	Exposed metal pad on top surface - connects directly to high-current output trace or heatsink for top-side thermal extraction.
Drain (Bottom Pad)	Power return path	Large copper area on underside - soldered to PCB drain pour for primary thermal and current path.
Source (Bottom)	Reference node for gate drive	Integrated source terminals adjacent to bottom drain pad - minimizes source inductance for stable switching.
Gate (Side Lead)	Control input	Single gull-wing lead on package side - routed with short, low-inductance trace to gate driver for clean turn-on/turn-off.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	270 mΩ·nC - Balances switching and conduction losses in 500 kHz–1 MHz DC/DC converters.
Dual-sided cooling	Simultaneous top/bottom thermal interfaces reduce total thermal resistance by up to 40% vs. single-side packages.
Low profile (<0.7 mm)	Enables ultra-thin power modules and stacked PCB architectures where Z-height is constrained.
100% avalanche tested	Each unit validated to 17 mJ single-pulse energy - eliminates field failure risk in unclamped inductive circuits.
JEDEC-qualified	Complies with J-STD-20 reflow and JESD22 reliability standards for automotive and industrial temperature cycling.

Applications

Automotive ADAS Power Supply

Industrial PLC I/O Module

Use Scenario: 48 V–12 V synchronous buck converter powering radar sensor SoCs in autonomous driving ECUs.

IC Role / Device Role / Timing Role: High-side power switch in 1 MHz switching regulator delivering 12 V/10 A with <15 mV ripple.

Use Value: Dual-sided cooling maintains T_j < 125 °C under full load, eliminating need for discrete heatsinks in sealed enclosures.

Use Scenario: Isolated 24 V DC/DC stage supplying programmable logic controller (PLC) digital I/O banks.

IC Role / Device Role / Timing Role: Primary switch in half-bridge topology operating at 600 kHz with SiC gate driver.

Use Value: 45 mΩ R_DS(on) and 6 nC Q_g enable >95% efficiency at 8 A output while meeting IEC 61000-4-2 ESD immunity requirements.

Server VRM Phase Block

Medical Imaging Power Stage

Use Scenario: Multiphase CPU voltage regulator module (VRM) in data center servers requiring high current density per phase.

IC Role / Device Role / Timing Role: Low-side switch in interleaved 3-phase buck converter delivering 0.8 V/120 A to ASICs.

Use Value: 1.0 K/W R_thJC (bottom) allows direct mounting to copper-filled thermal vias, reducing phase temperature rise by 18 °C vs. SO-8 equivalents.

Use Scenario: X-ray generator auxiliary supply converting 400 V DC to 24 V for detector bias and control circuitry.

IC Role / Device Role / Timing Role: Main switch in active clamp forward converter operating at 200 kHz with zero-voltage switching.

Use Value: 75 V V_DS rating and 17 mJ E_AS withstand repetitive 600 V flyback spikes without derating or snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 4.5 mΩ higher (49.5 mΩ); Q_g = 7.2 nC; same CanPAK M package but taller (0.9 mm).	Higher conduction loss increases thermal stress in space-constrained 1 MHz designs.	Prefer when board-level thermal management includes top-side heatsinking and lower gate drive strength is acceptable.
STL220N7F7AG	R_DS(on) = 42 mΩ (slightly lower); Q_g = 10.5 nC; PowerFLAT 5x6 package with single-sided cooling only.	Lacks dual-sided cooling - requires larger PCB copper area to match thermal performance.	Choose when cost sensitivity outweighs height constraints and top-side thermal access is unavailable.

Compared with IRFH7107TRPBF and STL220N7F7AG, BSF450NE7NH3XUMA1 offers the lowest profile and best thermal resistance for high-density DC/DC converters, trading slightly higher gate charge than the ST part for superior thermal extraction and avalanche margin over both alternatives.

Availability

BSF450NE7NH3XUMA1 is available at Aetrix Electronics and suitable for automotive ADAS power supplies, industrial PLC I/O modules, server VRM phase blocks, and medical imaging power stages requiring stable component supply and long-term lifecycle assurance.

Supply support for BSF450NE7NH3XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™3 family - engineered specifically for high-frequency, high-efficiency DC/DC conversion in automotive, server, and industrial power systems where thermal density and reliability are critical.

FAQ

What is the maximum recommended gate drive voltage for BSF450NE7NH3XUMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 12 V may marginally reduce R_DS(on) but risks accelerated gate oxide degradation over time. For reliable operation across temperature and lifetime, 10 V is the recommended nominal gate drive voltage per the datasheet's electrical characteristics tables.

Does BSF450NE7NH3XUMA1 require a gate resistor for stability?

Yes - a series gate resistor (typically 1.6 Ω, as used in the datasheet's switching time test conditions) is required to dampen ringing caused by gate-drain capacitance and PCB inductance. Omitting it can cause oscillation during turn-on/turn-off, leading to increased switching losses and potential device failure due to localized hot spots.

Can BSF450NE7NH3XUMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (shown in Diagram 9) enables inherent current sharing. However, strict layout symmetry (matched gate and source inductance, equal thermal paths) is mandatory. Parallel operation also requires individual gate resistors and careful attention to PCB copper balance to avoid thermal runaway above 125 °C junction temperature.

Is the body diode suitable for synchronous rectification?

No - the body diode has a typical forward voltage of 0.9–1.2 V and 24 ns reverse recovery time, making it unsuitable for synchronous rectification above ~200 kHz. For such applications, an external Schottky or GaN FET should be used as the low-side switch to minimize conduction and recovery losses.

BSF450NE7NH3XUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta), 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:: 6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 37.5 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 18W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF450NE7NH3XUMA1 FAQ

1.How can I place an order for BSF450NE7NH3XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF450NE7NH3XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF450NE7NH3XUMA1 reliable?

The price and inventory of BSF450NE7NH3XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF450NE7NH3XUMA1 is usually 5 days.

3.What payment methods are accepted for BSF450NE7NH3XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF450NE7NH3XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF450NE7NH3XUMA1?

BSF450NE7NH3XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF450NE7NH3XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF450NE7NH3XUMA1?

For technical support, including BSF450NE7NH3XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF450NE7NH3XUMA1 requirements.

6.How does Aetrix verify that BSF450NE7NH3XUMA1 is sourced from the original manufacturer or authorized distributors?

All BSF450NE7NH3XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF450NE7NH3XUMA1 meets industry standards.

7.What is the process for return or replacement of BSF450NE7NH3XUMA1?

All BSF450NE7NH3XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSF450NE7NH3XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF450NE7NH3XUMA1 part is unused and in its original packaging.

Return procedure for BSF450NE7NH3XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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