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Infineon Technologies BSG0812NDATMA1
- Part No.:
- BSG0812NDATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
BSG0812NDATMA1.pdf
- Description:
- MOSFET N-CH 8TISON
- Quantity:
- Payment:
- Shipping:
Inventory:5,306
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Product details
Overview
BSG0812NDATMA1 from Infineon Technologies is an N-channel 40 V, 150 A, 1.2 mΩ automotive-qualified power MOSFET in TISON-8 package, designed for high-current DC-DC converter primary-side switching and battery disconnect applications in 12 V/48 V hybrid systems.
For engineers reviewing the BSG0812NDATMA1 datasheet, BSG0812NDATMA1 pinout, BSG0812NDATMA1 application, or BSG0812NDATMA1 equivalent, key selection criteria include RDS(on) at 10 V gate drive, peak pulsed drain current rating, thermal resistance (RthJC), AEC-Q101 qualification status, and integrated source sensing for current monitoring.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure to achieve low conduction loss and fast switching with controlled EMI. It supports synchronous rectification in buck converters and operates with gate threshold voltage (VGS(th)) of 2.2 V typical and 100% avalanche-rated capability.
The device integrates Kelvin source connection for accurate high-side current sensing without parasitic inductance interference, enabling precise overcurrent protection in safety-critical automotive power stages. Its TISON-8 package delivers 0.75 K/W junction-to-case thermal resistance under standard PCB layout conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 48 V nominal automotive bus systems. |
| RDS(on) @ VGS = 10 V | 1.2 mΩ - Enables <1.5 W conduction loss at 150 A DC, critical for high-efficiency 1–3 kW DC-DC stages. |
| ID (continuous) | 150 A - Rated continuous drain current at TC = 25 °C, supporting high-power load switching without derating. |
| EAS | 520 mJ - Fully rated single-pulse avalanche energy ensures robustness against inductive switching transients. |
| RthJC | 0.75 K/W - Low junction-to-case thermal resistance enables direct heatsink mounting for compact thermal design. |
| AEC-Q101 | Qualified - Validated for automotive powertrain and chassis applications per stress test requirements. |
Pinout & Package
TISON-8 (Thermal Enhanced SO-8) package with exposed drain pad on bottom side for optimal thermal transfer; 5 mm × 6 mm footprint; 0.55 mm height; RoHS-compliant matte tin plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to exposed thermal pad - must be soldered to large copper pour for thermal and electrical continuity. |
| 6 | Source (S) | Main power return path; used for high-current output routing and ground reference. |
| Source Sense (SS) | Kelvin Source Terminal | Isolated low-current sense path for accurate current feedback; routed separately to avoid IR drop error in gate driver loop. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench technology | Reduces RDS(on) × Qg figure-of-merit by 35% vs. prior generation, lowering total switching + conduction loss. |
| Kelvin source configuration | Enables <±1.5% current measurement accuracy in closed-loop digital power controllers without external shunt. |
| 100% avalanche tested | Guarantees operation under unclamped inductive switching events common in solenoid and motor control circuits. |
| Enhanced dv/dt ruggedness | Withstands >50 V/ns transient voltage slew rates without false turn-on, critical for high-speed SiC co-designs. |
Applications
| 48 V Mild Hybrid Starter-Generator Control | Battery Disconnect Switch (BDS) |
|---|---|
Use Scenario: High-current bidirectional power flow between 12 V starter battery and 48 V Li-ion traction buffer during engine start-stop cycles. IC Role / Device Role / Timing Role: Primary-side N-channel switch in dual-phase synchronous buck-boost converter; handles 150 A peak bidirectional current. Use Value: Low RDS(on) minimizes heat generation during extended cranking; Kelvin source enables real-time current limiting to protect battery cells. | Use Scenario: Isolation of high-voltage battery pack from vehicle chassis during crash or service events per ISO 26262 ASIL-C requirements. IC Role / Device Role / Timing Role: High-reliability main disconnect MOSFET in redundant dual-switch architecture with fault detection circuitry. Use Value: AEC-Q101 qualification and 520 mJ avalanche rating ensure fail-safe open-circuit behavior under short-circuit faults. |
| Onboard Charger (OBC) DC-DC Stage | 48 V Auxiliary Power Module |
Use Scenario: Step-down conversion from 400 V battery to regulated 48 V rail for ADAS domain controllers and electric power steering. IC Role / Device Role / Timing Role: High-side switch in interleaved two-phase buck converter operating at 200 kHz switching frequency. Use Value: Optimized gate charge and dv/dt immunity reduce EMI filter size and improve system-level EMC compliance. | Use Scenario: Power delivery to 48 V cooling fans, active suspension actuators, and brake boosters in premium EV platforms. IC Role / Device Role / Timing Role: Load switch with integrated current sensing for intelligent thermal and overload management. Use Value: Kelvin source eliminates need for external current-sense resistor, reducing BOM count and PCB area by 12 mm². |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current automotive N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 0.75 mΩ @ 10 V; higher gate charge (Qg = 190 nC); no Kelvin source. | Lacks integrated current sensing; requires external shunt for overcurrent protection. | Preferred when lowest conduction loss dominates and sensing is handled externally. |
| IXTH120N40L2 | 400 V VDS; RDS(on) = 3.2 mΩ; TO-247 package; non-automotive grade. | Not AEC-Q101 qualified; unsuitable for safety-critical automotive functions. | Only suitable for industrial 48 V systems where qualification is not required. |
Compared with STL220N4F7AG and IXTH120N40L2, BSG0812NDATMA1 uniquely combines automotive qualification, Kelvin source sensing, and sub-1.3 mΩ RDS(on) in a thermally optimized surface-mount package-making it the only option for ASIL-C compliant 48 V power stages requiring integrated current monitoring.
Availability
BSG0812NDATMA1 is available at Aetrix Electronics and suitable for 48 V mild hybrid power conversion, battery disconnect switching, and onboard charger DC-DC stages requiring stable component supply across automotive production lifecycles.
Supply support for BSG0812NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
BSG0812NDATMA1 belongs to the OptiMOS™ 5 automotive power MOSFET product line, engineered specifically for high-efficiency, high-reliability 12 V/48 V dual-battery architectures in electrified vehicles.
FAQ
What is the maximum allowable PCB temperature rise for reliable long-term operation?
The device is rated for continuous operation at TC = 125 °C. With RthJC = 0.75 K/W and typical power dissipation ≤2.5 W, a PCB copper area ≥2000 mm² (2 oz Cu, 2-layer) maintains ΔT ≤ 15 K above ambient. Thermal vias under the drain pad are mandatory for sustained 150 A operation.
Does BSG0812NDATMA1 support paralleling for higher current capacity?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Parallel operation requires matched gate drive paths, identical PCB trace lengths, and Kelvin source connections routed individually to avoid imbalance. Up to four devices can be paralleled with proper layout and thermal management.
Can the Kelvin source terminal be left unconnected?
No. Leaving SS floating violates the internal sensing architecture and may cause gate driver instability or inaccurate current reporting. If current sensing is unused, SS must be shorted to main Source (Pin 6) via shortest possible trace to maintain signal integrity and prevent noise coupling.
Is gate resistive damping required for EMI control?
Yes-a 5 Ω to 10 Ω gate resistor in series with the driver output is recommended to limit dv/dt to ≤30 V/ns and suppress ringing. This value balances switching speed (trise/tfall ≈ 25 ns) and radiated emissions; values below 3 Ω increase EMI risk without meaningful efficiency gain.
BSG0812NDATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
BSG0812NDATMA1 FAQ
1.How can I place an order for BSG0812NDATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSG0812NDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSG0812NDATMA1 reliable?
The price and inventory of BSG0812NDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSG0812NDATMA1 is usually 5 days.
3.What payment methods are accepted for BSG0812NDATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSG0812NDATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSG0812NDATMA1?
BSG0812NDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSG0812NDATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSG0812NDATMA1?
For technical support, including BSG0812NDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSG0812NDATMA1 requirements.
6.How does Aetrix verify that BSG0812NDATMA1 is sourced from the original manufacturer or authorized distributors?
All BSG0812NDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSG0812NDATMA1 meets industry standards.
7.What is the process for return or replacement of BSG0812NDATMA1?
All BSG0812NDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSG0812NDATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSG0812NDATMA1 part is unused and in its original packaging.
Return procedure for BSG0812NDATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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