My Inquiry
My Account
Infineon Technologies BSL373SNH6327XTSA1
- Part No.:
- BSL373SNH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
BSL373SNH6327XTSA1.pdf
- Description:
- MOSFET N-CH 100V 2A TSOP-6
- Quantity:
- Payment:
- Shipping:
Inventory:6,028
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSL373SNH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in TSOP6 package, rated for 100 V VDS, 2.0 A continuous drain current, and 0.23 Ω max RDS(on) at VGS = 10 V. It is AEC-Q101 qualified, avalanche-rated, and optimized for industrial DC-DC converters and motor control stages requiring robust switching under repetitive transient stress.
For engineers reviewing the BSL373SNH6327XTSA1 datasheet, BSL373SNH6327XTSA1 pinout, BSL373SNH6327XTSA1 application, or BSL373SNH6327XTSA1 equivalent, key selection criteria include its 33 mJ single-pulse avalanche energy, 6 kV/µs di/dt ruggedness, 2.1–4.0 V gate threshold range, and TSOP6 thermal resistance of 62.5 K/W with 6 cm² copper area.
Technical Context
This OptiMOS™ small-signal transistor uses a trench-based silicon process to achieve low RDS(on) while maintaining high dv/dt immunity and controlled gate charge (Qg = 6.2–9.3 nC). Its integrated body diode features 27–41 ns reverse recovery time and 60–90 nC Qrr, enabling efficient synchronous rectification in flyback and buck topologies.
The device operates across –55 °C to +150 °C junction temperature, with thermal resistance junction-to-ambient of 62.5 K/W on a 6 cm² PCB copper area. Gate threshold voltage shifts predictably with temperature (2.1 V min at 25 °C, 1.2 V typ at 150 °C), supporting stable biasing in thermally varying environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial power supplies |
| RDS(on) max | 230 mΩ at VGS = 10 V, ID = 2 A - enables <1.0 W conduction loss at full load in 2 A switch-node applications |
| ID continuous | 2.0 A at TA = 25 °C - suitable for compact 5–15 W isolated DC-DC stages without forced air |
| EAS | 33 mJ - withstands single inductive turn-off events up to 2 A with 25 Ω gate resistor |
| Qg | 6.2–9.3 nC - determines gate drive power requirement and switching speed in 100–500 kHz SMPS designs |
| tr/tf | 5.9–8.9 ns / 13.6–20.4 ns - enables fast transitions with minimal overlap loss in hard-switched topologies |
| VGS(th) | 2.1–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers |
Pinout & Package
BSL373SNH6327XTSA1 is housed in a surface-mount TSOP6 package (4.9 mm × 2.8 mm × 1.1 mm), featuring exposed drain pad for enhanced thermal dissipation and optimized for automated placement on FR4 PCBs with minimal footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to substrate; requires low-impedance ground plane routing |
| 2 (Gate) | Control electrode for channel modulation | High-impedance input; sensitive to ESD (Class HBM 0); needs local RC snubber for ringing suppression |
| 3 (Drain) | Main current-carrying terminal | Exposed pad (pins 4–6) - must be soldered to ≥6 cm² copper pour for thermal performance |
| 4 (Drain) | Drain connection (common with pins 5 & 6) | Part of multi-pin drain structure to reduce package inductance and improve current sharing |
| 5 (Drain) | Drain connection (common with pins 4 & 6) | Enables symmetric layout for balanced thermal distribution and reduced parasitic loop area |
| 6 (Drain) | Drain connection (common with pins 4 & 5) | Supports high-current pulse handling (ID,pulse = 8.0 A) when all three pins are properly routed |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed 33 mJ single-pulse energy handling without degradation - eliminates need for external clamping in inductive loads |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity, and mechanical shock - suitable for industrial transport and off-highway equipment |
| Low gate charge (Qg) | 6.2–9.3 nC enables efficient driving with low-power gate drivers (e.g., 1–2 mA peak) at 500 kHz switching |
| Halogen-free & RoHS-compliant | Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - supports green manufacturing and end-of-life compliance |
| Thermally enhanced TSOP6 | 62.5 K/W RthJA with 6 cm² copper - achieves 150 °C Tj at 1.6 A ambient-limited operation without heatsink |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drivers |
|---|---|
Use Scenario: Primary-side switch in 12–48 V input, 5–15 W isolated flyback converters for PLC I/O modules and sensor transmitters. IC Role / Device Role / Timing Role: High-side switching element operating at 250–500 kHz with synchronous rectification support via integrated diode. Use Value: 230 mΩ RDS(on) limits conduction loss to <0.9 W at 2 A, while 33 mJ EAS prevents failure during output short-circuit events. | Use Scenario: Low-side phase switch in 24 V BLDC gate driver IC reference designs for HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: Fast-turning discrete switch controlling PWM current flow to motor windings with <21 ns fall time. Use Value: 13.6–20.4 ns tf and 6 kV/µs dv/dt rating ensure clean commutation edges and immunity to shoot-through in half-bridge configurations. |
| Automotive Body Control Modules | LED Constant-Current Drivers |
Use Scenario: Load switch for interior lighting, window lift, and mirror actuation in 12 V battery-powered BCMs. IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated avalanche energy absorption. Use Value: AEC-Q101 qualification and –55 °C to +150 °C operation guarantee reliability across vehicle life cycle; 2.0 A ID supports 20 W incandescent or LED loads. | Use Scenario: Constant-current sink in linear+PWM hybrid LED drivers for architectural and signage lighting. IC Role / Device Role / Timing Role: Precision current-regulating pass element with low VSD (0.8–1.1 V) forward diode drop. Use Value: Integrated diode's 27–41 ns trr minimizes switching losses during PWM dimming; 2.0 A IS rating supports multi-string parallel configurations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK100Z | 1000 V VDS, 2.5 A ID, 5.5 Ω RDS(on) - higher voltage rating but significantly higher on-resistance | Targeted at high-voltage AC-DC PFC stages, not low-loss DC-DC or motor control | Select only if >600 V blocking capability is required; unsuitable for efficiency-critical 24–48 V systems |
| DMN3028LSD-13 | 30 V VDS, 6.5 A ID, 28 mΩ RDS(on) - lower voltage, higher current, much lower RDS(on) | Optimized for 5–12 V load switching and battery protection, not 100 V industrial transients | Prefer for portable electronics or USB-PD sinks; avoid where 100 V surge immunity is mandatory |
Compared with STP3NK100Z and DMN3028LSD-13, BSL373SNH6327XTSA1 uniquely balances 100 V rating, 230 mΩ RDS(on), and AEC-Q101 qualification - making it the only option among the three validated for thermally demanding, transient-rich 24–48 V industrial motor and power supply designs.
Availability
BSL373SNH6327XTSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drivers, automotive body control modules, and LED constant-current drivers requiring stable component supply and long-term manufacturability.
Supply support for BSL373SNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.
The OptiMOS™ product line delivers high-performance, low-RDS(on) MOSFETs engineered for efficiency-critical power conversion and motor control in industrial automation, renewable energy inverters, and automotive subsystems.
FAQ
What is the maximum allowable gate-source voltage for BSL373SNH6327XTSA1?
The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent oxide damage. For reliable switching, gate drive should be limited to 10–12 V for optimal RDS(on) and safe margin against overshoot. The device's VGS(th) range (2.1–4.0 V) ensures turn-on with 3.3 V logic, but full enhancement requires ≥10 V.
Does BSL373SNH6327XTSA1 require a gate resistor, and what value is recommended?
Yes - a gate resistor is essential to control dV/dt, suppress oscillation, and limit peak gate current. For 500 kHz operation with a 1-A peak gate driver, a 6.8 Ω series resistor is recommended based on Qg = 7.8 nC typical and tr/tf targets. Lower values increase switching speed but risk ringing; higher values reduce EMI at the cost of increased switching loss.
Can BSL373SNH6327XTSA1 be used in parallel configurations?
Yes, but only with careful layout and gate drive design. Its positive RDS(on) temperature coefficient (RDS(on) increases with Tj) enables inherent current sharing. To ensure balance, use matched gate resistors, symmetrical PCB traces, and shared thermal mass. Avoid paralleling more than two devices without individual current sensing due to parametric spread in VGS(th).
Is the TSOP6 package lead-free and compatible with standard reflow profiles?
Yes - BSL373SNH6327XTSA1 is RoHS-compliant and halogen-free, with lead-free terminations qualified for IPC/JEDEC J-STD-020D reflow. Peak temperature is rated at 260 °C for ≤10 seconds. The exposed drain pad requires full solder coverage to meet thermal specs; voiding >25% degrades RthJA by up to 30%.
BSL373SNH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 230mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 265 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSOP6-6
BSL373SNH6327XTSA1 FAQ
1.How can I place an order for BSL373SNH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSL373SNH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSL373SNH6327XTSA1 reliable?
The price and inventory of BSL373SNH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSL373SNH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BSL373SNH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSL373SNH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSL373SNH6327XTSA1?
BSL373SNH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSL373SNH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSL373SNH6327XTSA1?
For technical support, including BSL373SNH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSL373SNH6327XTSA1 requirements.
6.How does Aetrix verify that BSL373SNH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BSL373SNH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSL373SNH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BSL373SNH6327XTSA1?
All BSL373SNH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSL373SNH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSL373SNH6327XTSA1 part is unused and in its original packaging.
Return procedure for BSL373SNH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSL373SNH6327XTSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
