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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSL802SNH6327XTSA1

Name: BSL802SNH6327XTSA1
Brand: Infineon Technologies
SKU: BSL802SNH6327XTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSL802SNH6327XTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: BSL802SNH6327XTSA1.pdf

Description:: MOSFET N-CH 20V 7.5A TSOP-6

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Product details

Overview

BSL802SNH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for ultra-low-voltage logic-level drive (1.8 V rated), with 20 V V_DS, 7.5 A continuous drain current at T_A=25 °C, and 22 mΩ R_DS(on) at V_GS=2.5 V. It is AEC-Q101 qualified, avalanche-rated, and used in automotive body electronics and low-voltage DC-DC load switching.

For engineers reviewing the BSL802SNH6327XTSA1 datasheet, BSL802SNH6327XTSA1 pinout, BSL802SNH6327XTSA1 application, or BSL802SNH6327XTSA1 equivalent, key selection criteria include its 1.8 V gate threshold compatibility with modern microcontrollers, robust 30 mJ single-pulse avalanche energy rating, and TSOP6 package suitability for space-constrained PCB layouts in automotive and industrial control modules.

Technical Context

This OptiMOS™2 device uses a trench-gate process to achieve low R_DS(on) at ultra-low gate voltages, enabling direct drive from 1.8 V/2.5 V I/Os without level-shifting. Its 31 mΩ max R_DS(on) at V_GS=1.8 V and 3.6 A ensures efficient conduction in battery-powered systems.

The integrated body diode supports synchronous rectification and reverse-current handling, with 15 ns t_rr, 5.1 nC Q_rr, and 0.86–1.1 V V_SD at I_F=7.5 A. Thermal resistance R_thJA is 62.5 K/W with 6 cm² copper area, supporting high-reliability operation up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V automotive and 5–19 V industrial bus systems.
R_DS(on) max @ V_GS=1.8 V	31 mΩ - Enables low-loss switching at logic-level MCU outputs without gate drivers.
I_D continuous @ T_A=25 °C	7.5 A - Supports medium-power loads such as LED drivers, solenoid controls, and fan motors.
E_AS	30 mJ - Withstands inductive kickback in relay and motor drive circuits without external snubbers.
Q_g	4.7 nC - Low gate charge enables fast switching with minimal driver power consumption.
t_r/t_f	30 ns / 5.5 ns - Supports high-frequency PWM operation up to ~2 MHz in DC-DC converters.
V_GS(th)	0.3–0.75 V - Ensures reliable turn-on even under low-noise margin conditions in automotive environments.

Pinout & Package

BSL802SNH6327XTSA1 is housed in a PG-TSOP6 surface-mount package (3.05 mm × 1.5 mm × 0.95 mm), designed for automated assembly and thermal performance on minimal-footprint PCBs with drain-connected copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of N-channel MOSFET	Common return path for load current; tied to system ground or low-side reference.
2 (Gate)	Control input for channel conduction	Accepts 1.8 V logic signals; requires <100 nA leakage current drive capability.
3 (Drain)	High-side load connection point	Connected to positive supply rail; carries full load current and must be routed over ≥6 cm² copper for thermal management.
4 (Source)	Source terminal (dual-source configuration)	Parallel source bond wire improves current sharing and reduces package inductance.
5 (Drain)	High-side load connection point	Second drain terminal for enhanced thermal dissipation and lower R_DS(on) stability under pulse loads.
6 (Drain)	High-side load connection point	Third drain terminal; enables symmetric current distribution across package leads in high-current switching.

Key Features

Feature	Design Value
Ultra logic-level gate drive	Operates fully enhanced at V_GS = 1.8 V, eliminating need for gate driver ICs in 1.8 V/2.5 V microcontroller interfaces.
Avalanche energy rating	30 mJ single-pulse E_AS allows safe operation in inductive load switching without external clamping components.
AEC-Q101 qualification	Validated for automotive applications including door modules, seat controls, and lighting systems per stress test requirements.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS directives, supporting environmentally regulated production and end-of-life compliance.
Low gate charge	4.7 nC total gate charge minimizes switching losses and driver power demand in high-frequency DC-DC and PWM designs.

Applications

Automotive Body Control Module

USB-C Power Delivery Switch

Use Scenario: Controlling 12 V lamp loads, window lift motors, and mirror actuators in vehicle door modules.

IC Role / Device Role / Timing Role: Low-side load switch providing precise on/off control with fast turn-off (<5.5 ns fall time) to prevent contact arcing.

Use Value: 31 mΩ R_DS(on) at 1.8 V gate drive reduces heat generation in confined module enclosures, extending service life.

Use Scenario: Enabling/disabling 5–20 V power paths in USB-C PD sink devices with strict 1.8 V logic interface requirements.

IC Role / Device Role / Timing Role: High-efficiency power path MOSFET with low Q_g enabling rapid enable/disable transitions during PD contract negotiation.

Use Value: 4.7 nC Q_g and 30 ns rise time support sub-microsecond response to PD controller commands without overshoot.

Industrial Sensor Node Power Gating

Low-Voltage DC-DC Synchronous Rectifier

Use Scenario: Power gating of wireless sensor transceivers and analog front-ends in battery-operated IIoT nodes.

IC Role / Device Role / Timing Role: Ultra-low-leakage (1 µA I_DSS max at 25 °C) high-side switch enabling multi-year battery life in sleep mode.

Use Value: 0.3 V min V_GS(th) ensures stable turn-off across temperature, preventing phantom wake-up in cold ambient conditions.

Use Scenario: Secondary-side synchronous rectification in 3.3 V/5 V buck converters for FPGA and SoC core supplies.

IC Role / Device Role / Timing Role: Fast-recovery body diode (15 ns t_rr) and low V_SD (0.86 V typ) reduce conduction loss and improve light-load efficiency.

Use Value: Integrated diode eliminates need for discrete Schottky, reducing BOM count and layout area in compact power modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BSS138W,115 (Nexperia)	Lower I_D (0.3 A), higher R_DS(on) (3.5 Ω @ V_GS=2.5 V), SOT-323 package	Suitable only for signal switching, not power switching	Select only for low-current digital isolation or level shifting-not for load switching above 100 mA.
DMN2004K-7 (Diodes Inc.)	20 V V_DS, 4.2 A I_D, 32 mΩ R_DS(on) @ V_GS=2.5 V, SOT-23 package	Limited thermal capability (R_thJA ≈ 200 K/W); unsuitable for sustained >2 A loads	Acceptable for intermittent 2 A loads in consumer-grade PCBs but lacks AEC-Q101 qualification and avalanche rating.

Compared with BSS138W and DMN2004K-7, BSL802SNH6327XTSA1 delivers 7.5 A continuous current, AEC-Q101 reliability, and 30 mJ avalanche robustness-making it uniquely suited for automotive and industrial power switching where safety and thermal resilience are mandatory.

Availability

BSL802SNH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, and industrial sensor node power management requiring stable component supply and long-term lifecycle assurance.

Supply support for BSL802SNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The OptiMOS™2 product line targets high-efficiency, low-voltage power switching in automotive and industrial applications, emphasizing logic-level drivability, thermal robustness, and AEC-Q101 compliance for mission-critical subsystems.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The BSL802SNH6327XTSA1 has a maximum junction temperature of 150 °C. At T_A=70 °C, its continuous drain current drops to 6.0 A due to thermal derating-this reflects the 230 K/W R_thJA limit on minimal footprint PCBs. With 6 cm² copper cooling, R_thJA improves to 62.5 K/W, allowing full 7.5 A operation at ambient up to 65 °C.

Is this MOSFET suitable for reverse polarity protection in 12 V automotive systems?

Yes-its 20 V V_DS rating, 31 mΩ R_DS(on) at 1.8 V gate drive, and AEC-Q101 qualification make it appropriate for low-drop reverse polarity protection. The integrated body diode blocks reverse current when placed in the high-side path, and its 100 mA I_DSS max at 150 °C ensures stability during hot cranking events.

Does the TSOP6 package support hand-soldering or require reflow only?

The PG-TSOP6 package is designed for lead-free reflow soldering per JEDEC J-STD-020 (peak 260 °C). Hand-soldering is not recommended due to fine pitch (0.65 mm), thermal pad sensitivity, and risk of voiding the drain thermal connection. Reflow profiling with preheat, soak, and controlled ramp rates is required for reliable interconnects and thermal performance.

How does the 30 mJ avalanche rating translate to real-world inductive load handling?

The 30 mJ E_AS rating is measured at I_D=7.5 A with R_GS=25 Ω, representing worst-case energy absorption during abrupt turn-off of inductive loads like solenoids or relays. In practice, this allows safe operation without external TVS or snubber circuits for loads with L ≤ 100 µH switching at ≤10 kHz, provided layout minimizes parasitic inductance.

BSL802SNH6327XTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 2.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 7.5A, 2.5V

Vgs(th) (Max) @ Id:: 750mV @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 4.7 nC @ 2.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1347 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSOP6-6

BSL802SNH6327XTSA1 FAQ

1.How can I place an order for BSL802SNH6327XTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSL802SNH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSL802SNH6327XTSA1 reliable?

The price and inventory of BSL802SNH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSL802SNH6327XTSA1 is usually 5 days.

3.What payment methods are accepted for BSL802SNH6327XTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSL802SNH6327XTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSL802SNH6327XTSA1?

BSL802SNH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSL802SNH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSL802SNH6327XTSA1?

For technical support, including BSL802SNH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSL802SNH6327XTSA1 requirements.

6.How does Aetrix verify that BSL802SNH6327XTSA1 is sourced from the original manufacturer or authorized distributors?

All BSL802SNH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSL802SNH6327XTSA1 meets industry standards.

7.What is the process for return or replacement of BSL802SNH6327XTSA1?

All BSL802SNH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSL802SNH6327XTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSL802SNH6327XTSA1 part is unused and in its original packaging.

Return procedure for BSL802SNH6327XTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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