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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO052N03S

Name: BSO052N03S
Brand: Infineon Technologies
SKU: BSO052N03S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO052N03S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO052N03S.pdf

Description:: MOSFET N-CH 30V 14A 8DSO

Quantity:: RFQ Add To RFQ list

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Inventory:2,038

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Product details

Overview

BSO052N03S from Infineon Technologies is a 30 V, 5.2 mΩ N-channel Trench MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and e-fuse applications. It delivers 100 A continuous drain current at T_C = 25 °C, features 100% avalanche-rated ruggedness, and supports logic-level gate drive down to 2.5 V.

For engineers reviewing the BSO052N03S datasheet, BSO052N03S pinout, BSO052N03S application, or BSO052N03S equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, thermal resistance R_thJC, gate charge Q_g and Q_gd, and SOA compliance under pulsed and linear-mode operation.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low on-resistance and fast switching with minimized gate-to-drain charge (Q_gd = 11 nC). Its 100% UIS-tested ruggedness ensures reliable operation under unclamped inductive switching stress.

The device integrates an integrated ESD protection diode (HBM Class 1C), meets RoHS and halogen-free requirements, and is qualified per AEC-Q101 for automotive-grade reliability. Thermal performance is enhanced by a copper-exposed drain pad and optimized die attach for R_thJC = 0.9 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus systems.
R_DS(on) @ V_GS = 10 V	5.2 mΩ - Enables <1.5 W conduction loss at 60 A in high-current power stages.
R_DS(on) @ V_GS = 4.5 V	7.5 mΩ - Supports efficient operation with 5 V logic-level gate drivers without level-shifting.
Q_g / Q_gd	32 nC / 11 nC - Low gate charge ratio improves dv/dt immunity and reduces driver power dissipation.
I_D (continuous) @ T_C = 25 °C	100 A - Sustains high-current loads in compact 3.3 × 3.3 mm footprint with external heatsinking.
R_thJC	0.9 K/W - Enables >80 W steady-state power dissipation with minimal junction temperature rise.
UIS Rating	100% tested - Guarantees robustness against inductive turn-off transients up to 100 mJ (single pulse).

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.95 mm height), thermally enhanced with exposed drain pad (pins 1–3 and 5–7 are source; pin 4 is gate; drain connected to bottom thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source	Common low-side return path; six parallel pins minimize source inductance and improve current sharing.
4	Gate	Single control input; designed for standard logic-level drive with 10 V max rating and 2.5 V threshold.
Drain (exposed pad)	Power Drain / Thermal Interface	Primary current path and main thermal conduction path to PCB; requires soldered thermal pad for R_thJC spec.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Delivers lowest R_DS(on) × Q_g figure-of-merit (FoM) in 30 V class for high-frequency SMPS efficiency.
100% UIS tested	Eliminates need for external snubbers in flyback and buck-boost topologies with inductive loads.
Logic-level gate drive (V_GS(th) = 1.2–2.2 V)	Direct interface with MCU GPIOs and low-voltage PWM controllers without gate driver ICs.
AEC-Q101 qualified	Validated for automotive body electronics, ADAS power supplies, and infotainment DC-DC modules.
Halogen-free & RoHS compliant	Meets global environmental regulations for industrial and consumer end-equipment manufacturing.

Applications

Server VRM Output Stage

Automotive Body Control Module

Use Scenario: High-current, high-frequency synchronous buck converter delivering 12 V @ 80 A to CPU core rails.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses by >40%.

Use Value: Achieves >95% peak efficiency at 500 kHz switching with R_DS(on) = 5.2 mΩ and Q_gd = 11 nC minimizing shoot-through risk.

Use Scenario: 12 V e-fuse protecting LIN bus peripherals and LED lighting circuits in BCM.

IC Role / Device Role: Current-controlled power switch with fast overcurrent response and thermal foldback.

Use Value: Supports 100 A short-circuit withstand for 100 µs via SOA-limited linear mode operation and integrated thermal shutdown.

Industrial PLC I/O Driver

USB-C PD Sink Power Path

Use Scenario: Solid-state relay replacement for 24 V DC output modules driving solenoids and valves.

IC Role / Device Role: Low-R_DS(on) load switch with controlled turn-on slew rate to limit inrush current.

Use Value: Enables <100 ns turn-on delay and <500 ns turn-off delay while maintaining <10 mΩ on-resistance across -40 to 125 °C.

Use Scenario: 20 V/5 A USB-C Power Delivery sink path with reverse-polarity and overvoltage protection.

IC Role / Device Role: Back-to-back configured MOSFET for bidirectional blocking and low-loss forward conduction.

Use Value: Dual-device configuration achieves <15 mΩ total path resistance with <20 nC combined gate charge for fast PD contract negotiation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 4.8 mΩ @ 10 V, Q_g = 38 nC, R_thJC = 1.1 K/W, same PG-TSDSON-8 package.	Higher gate charge increases driver losses; better R_DS(on) suits lower-frequency, higher-current designs.	Select when absolute minimum conduction loss dominates over switching loss and thermal margin exceeds 1.1 K/W.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 5.8 mΩ @ 10 V, Q_g = 29 nC, R_thJC = 0.85 K/W, same footprint but non-AEC-Q101 rated.	Lacks automotive qualification; superior thermal resistance enables higher ambient operation in industrial settings.	Prefer for cost-sensitive industrial power supplies where AEC-Q101 is not mandated and thermal headroom is critical.

Compared with STL220N3LLH6 and NTMFS5C673NL, BSO052N03S offers the best balance of low Q_gd/Q_g ratio for hard-switching stability, AEC-Q101 compliance, and proven UIS ruggedness-making it optimal for automotive and high-reliability industrial synchronous rectifiers.

Availability

BSO052N03S is available at Aetrix Electronics and suitable for server VRMs, automotive body control modules, and industrial PLC I/O drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSO052N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

BSO052N03S belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-density DC-DC conversion in automotive and industrial power systems demanding low R_DS(on), fast switching, and rugged reliability.

FAQ

What is the maximum allowable gate-source voltage for BSO052N03S?

The absolute maximum V_GS rating is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative gate voltage beyond –20 V may cause parasitic turn-on or latch-up. For reliable logic-level drive, keep V_GS between 2.5 V (minimum threshold) and 15 V (recommended max for longevity).

Does BSO052N03S require a gate resistor for typical 500 kHz synchronous buck operation?

Yes-a 2.2 Ω to 4.7 Ω series gate resistor is recommended to damp ringing, limit peak gate current, and control dV/dt during switching transitions. This prevents false triggering and reduces EMI, especially when driving from a 3.3 V or 5 V MCU GPIO with limited current capability.

Can BSO052N03S be used in linear mode for electronic load applications?

Yes-its 100% UIS-tested ruggedness and specified Safe Operating Area (SOA) curves support linear-mode operation up to 100 A and 30 V for pulse durations ≤ 10 ms. Continuous linear use requires active thermal management to maintain T_j < 150 °C due to R_DS(on)-limited power dissipation.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the MOSFET's drain terminal and must be soldered to a dedicated, non-grounded copper pour. Connecting it to system ground creates a short circuit. Proper layout requires isolation from all other nets except the high-side switch node and output capacitor return.

BSO052N03S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5530 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO052N03S FAQ

1.How can I place an order for BSO052N03S through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO052N03S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO052N03S reliable?

The price and inventory of BSO052N03S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO052N03S is usually 5 days.

3.What payment methods are accepted for BSO052N03S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO052N03S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO052N03S?

BSO052N03S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO052N03S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO052N03S?

For technical support, including BSO052N03S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO052N03S requirements.

6.How does Aetrix verify that BSO052N03S is sourced from the original manufacturer or authorized distributors?

All BSO052N03S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO052N03S meets industry standards.

7.What is the process for return or replacement of BSO052N03S?

All BSO052N03S units undergo pre-shipment inspection (PSI). If there is an issue with BSO052N03S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO052N03S part is unused and in its original packaging.

Return procedure for BSO052N03S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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