Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO064N03S

Name: BSO064N03S
Brand: Infineon Technologies
SKU: BSO064N03S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSO064N03S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO064N03S.pdf

Description:: MOSFET N-CH 30V 12A 8DSO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,996

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSO064N03S from Infineon Technologies is a 30 V, 64 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with R_DS(on) = 3.7 mΩ at V_GS = 10 V and 5.2 mΩ at V_GS = 4.5 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the BSO064N03S datasheet, BSO064N03S pinout, BSO064N03S application, or BSO064N03S equivalent, key selection criteria include low gate charge (Q_g = 32 nC), fast switching (t_on = 13 ns, t_off = 22 ns), thermal resistance R_thJA = 43 K/W, and compliance with RoHS and halogen-free requirements.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) of 118 Ω·nC at 10 V drive. Its trench-gate structure enables precise threshold control (V_GS(th) = 1.2–2.2 V) and stable operation under pulsed drain current up to 192 A.

The device integrates a monolithic ESD protection diode and features avalanche-rated ruggedness (E_AS = 115 mJ). Its symmetrical source layout and exposed drain pad support low-inductance PCB mounting for high-frequency synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail applications with 50 % safety margin.
I_D (continuous)	64 A @ T_C = 25 °C - Sustained current capability with standard heatsinking on 1-layer 1 oz Cu board.
R_DS(on) max	5.2 mΩ @ V_GS = 4.5 V - Enables efficient operation directly from 5 V or 3.3 V gate drivers without level-shifting.
Q_g	32 nC @ V_GS = 10 V - Reduces gate driver power loss and supports >1 MHz switching in digital multiphase controllers.
R_thJA	43 K/W - Measured per JEDEC JESD51-2 on 1-in² 2-layer board; enables 18 W dissipation at ΔT = 775 K.
E_AS	115 mJ - Single-pulse avalanche energy rating ensures robustness during load dump or shoot-through fault events.

Pinout & Package

Package: PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), thermally enhanced with exposed drain pad on bottom side for direct PCB copper connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source terminals tied internally; low-inductance parallel routing reduces commutation loop inductance.
4	Gate	Single gate input with integrated ESD protection; compatible with 3.3 V/5 V logic-level drivers.
8	Drain	Exposed metal pad (bottom side); must be soldered to large copper pour for thermal and electrical performance.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 5 V control domains.
Low Q_gd/Q_g ratio	0.22 - minimizes Miller-induced switching delay and improves hard-switching efficiency in synchronous rectifiers.
Thermally optimized layout	0.55 K/W R_thJC - enables >90 % of rated power dissipation via PCB copper, reducing need for external heatsinks.
Avalanche-rated	100 % production-tested E_AS - guarantees reliability in uncontrolled transient conditions without derating.

Applications

Server VRM Power Stage

Industrial PLC I/O Module

Use Scenario: High-current, high-frequency buck converter supplying core voltage to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: High-side synchronous switch in 4-phase interleaved topology operating at 600 kHz–1 MHz.

Use Value: 3.7 mΩ R_DS(on) and 32 nC Q_g reduce conduction + switching losses by 18 % vs. prior-gen MOSFETs, enabling 95.2 % peak efficiency.

Use Scenario: Solid-state output driver for 24 V DC digital outputs in modular automation controllers.

IC Role / Device Role / Timing Role: Low-side load switch controlling solenoid valves and indicator LEDs with PWM dimming.

Use Value: 5.2 mΩ R_DS(on) at 4.5 V gate drive ensures <100 mW dissipation at 2 A load, eliminating active cooling.

Telecom PSU OR-ing

Automotive ADAS Camera Power

Use Scenario: Hot-swap OR-ing FET in redundant 12 V telecom power distribution units.

IC Role / Device Role / Timing Role: Reverse-polarity protected, low-R_DS(on) pass element with fast turn-on for seamless switchover.

Use Value: 1.2–2.2 V V_GS(th) range allows precise gate biasing to limit inrush; t_on = 13 ns prevents bus droop during switchover.

Use Scenario: Primary power switch for 5 V rail feeding image sensor and ISP in rear-view camera modules.

IC Role / Device Role / Timing Role: Load switch with controlled slew rate to suppress EMI during power-up sequencing.

Use Value: Gate charge profile enables external RC control of dV/dt; Q_g = 32 nC supports <10 µs soft-start with 10 kΩ resistor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.8 mΩ @ 4.5 V; Q_g = 27 nC; R_thJA = 52 K/W; SO-8 package	Higher thermal resistance limits continuous current to 48 A on same PCB; less suitable for >600 kHz operation due to higher Q_gd.	Prefer when footprint compatibility with legacy SO-8 layouts is required and thermal headroom exists.
STL220N3LLH6	R_DS(on) = 3.3 mΩ @ 4.5 V; Q_g = 41 nC; PG-TDSON-8; higher gate charge increases driver loss at >1 MHz.	Better conduction loss but slower switching; requires stronger gate driver for same frequency as BSO064N03S.	Prefer where ultra-low R_DS(on) dominates over switching loss, e.g., 300–500 kHz fixed-frequency designs.

Compared with IRLHS6342TRPBF and STL220N3LLH6, the BSO064N03S delivers optimal balance of low R_DS(on), moderate Q_g, and industry-leading thermal performance in its footprint-making it ideal for space-constrained, high-frequency, high-current POL applications where both efficiency and thermal management are critical.

Availability

BSO064N03S is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and telecom OR-ing circuits requiring stable component supply and long-term manufacturing continuity.

Supply support for BSO064N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D and wafer fabrication facilities.

The BSO064N03S belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSO064N03S has a rated T_J(max) of 150 °C per datasheet. Derating begins at T_C = 100 °C, and full 64 A current is only guaranteed at T_C ≤ 25 °C. For reliable 24/7 operation in enclosed environments, design for T_J ≤ 135 °C using measured R_thJC and board copper area.

Is the device suitable for paralleling multiple units to increase current capacity?

Yes-the BSO064N03S exhibits positive temperature coefficient for R_DS(on) above 25 °C, enabling inherently self-balancing current sharing. Layout symmetry and matched gate drive impedance are required; typical imbalance is <5 % at 100 A total with two devices.

Does the exposed drain pad require solder mask opening on the PCB?

Yes-the exposed drain pad (Pin 8) must be connected to a solid copper pour with ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch) to an internal ground plane. Solder mask must be removed from the entire pad area to ensure full solder wetting and minimal thermal resistance.

Can this MOSFET replace older OptiMOS™ 3 or 4 devices in existing designs?

Yes-pin-compatible with previous-generation PG-TDSON-8 OptiMOS™ devices (e.g., BSC014N03LS), offering lower R_DS(on) and Q_g. No layout change is needed, but gate driver strength should be verified: reduced Q_g may cause faster edge rates requiring minor gate resistor adjustment to manage EMI.

BSO064N03S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3620 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO064N03S FAQ

1.How can I place an order for BSO064N03S through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO064N03S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO064N03S reliable?

The price and inventory of BSO064N03S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO064N03S is usually 5 days.

3.What payment methods are accepted for BSO064N03S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO064N03S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO064N03S?

BSO064N03S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO064N03S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO064N03S?

For technical support, including BSO064N03S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO064N03S requirements.

6.How does Aetrix verify that BSO064N03S is sourced from the original manufacturer or authorized distributors?

All BSO064N03S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO064N03S meets industry standards.

7.What is the process for return or replacement of BSO064N03S?

All BSO064N03S units undergo pre-shipment inspection (PSI). If there is an issue with BSO064N03S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO064N03S part is unused and in its original packaging.

Return procedure for BSO064N03S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.