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Infineon Technologies BSO080P03NS3EGXUMA1
- Part No.:
- BSO080P03NS3EGXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO080P03NS3EGXUMA1.pdf
- Description:
- MOSFET P-CH 30V 12A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:5,886
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Product details
Overview
BSO080P03NS3EGXUMA1 from Infineon Technologies is a 30 V, -80 A, logic-level P-channel Trench MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, with RDS(on) = 3.5 mΩ at VGS = -10 V and 4.8 mΩ at VGS = -4.5 V, optimized for high-efficiency battery protection and load switching in portable power systems.
For engineers reviewing the BSO080P03NS3EGXUMA1 datasheet, BSO080P03NS3EGXUMA1 pinout, BSO080P03NS3EGXUMA1 application, or BSO080P03NS3EGXUMA1 equivalent, key selection criteria include pulsed drain current rating (240 A), gate charge (73 nC), thermal resistance (RthJA = 45 K/W), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 P-channel technology with trench gate structure, enabling low conduction losses and fast switching in synchronous rectification and reverse polarity protection circuits. Its logic-level gate drive supports direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.
The device features integrated ESD protection (HBM Class 2), robust avalanche capability (EAS = 420 mJ), and a specified gate threshold voltage range of -1.0 V to -2.5 V, ensuring stable turn-on behavior across temperature and process variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-to-source blocking voltage for battery disconnect and reverse polarity protection up to 24 V systems. |
| ID (continuous) | -80 A @ TC = 25 °C - Sustained load current handling with external heatsinking; derates to -50 A at 100 °C case temperature. |
| RDS(on) max | 4.8 mΩ @ VGS = -4.5 V - Enables <100 mW conduction loss at 5 A load, critical for compact battery management PCBs. |
| Qg | 73 nC - Total gate charge determining driver strength requirement; compatible with standard logic-level gate drivers. |
| RthJA | 45 K/W - Junction-to-ambient thermal resistance on 2-layer FR4 board (10 cm² copper pour), defining minimum cooling area needed. |
| EAS | 420 mJ - Single-pulse avalanche energy rating confirming ruggedness against inductive switching transients in motor control. |
| VGS(th) | -1.0 V to -2.5 V - Gate threshold range ensuring reliable turn-on with 3.3 V GPIO while avoiding false triggering near ground. |
Pinout & Package
PG-TSDSON-8 (3.3 × 3.3 mm, 0.65 mm pitch) thermally enhanced leadless package with exposed drain pad on bottom side for direct PCB thermal coupling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Source | Common source connection; internally tied together for low-inductance return path in high-current switching. |
| 4 | Gate | Control terminal; requires ≤ ±20 V absolute max; designed for direct MCU GPIO interface at 3.3 V/5 V logic levels. |
| 8 | Drain | Main power output terminal; connected to exposed thermal pad for heat dissipation and current conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = -4.5 V, eliminating need for gate driver ICs in portable battery applications. |
| AEC-Q101 qualified | Validated for automotive under-hood and infotainment power stages per stress test requirements including HTOL and TC. |
| Enhanced avalanche ruggedness | Rated EAS = 420 mJ enables safe operation during load dump or inductive flyback without external snubbers. |
| Low Qg/RDS(on) ratio | 73 nC / 4.8 mΩ = 15.2 nC·mΩ - Optimized switching efficiency for high-frequency DC-DC and OR-ing applications. |
| Thermally efficient package | Exposed drain pad reduces RthJC to 1.2 K/W, allowing >70% higher power density vs. SO-8 equivalents. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse polarity and overcurrent protection in 2-cell Li-ion battery packs for power tools and medical devices. IC Role / Device Role / Timing Role: High-side load switch controlling main power path; activated only when battery voltage and cell balance are verified. Use Value: RDS(on) = 4.8 mΩ limits voltage drop to <24 mV at 5 A, preserving runtime and enabling accurate coulomb counting. |
Use Scenario: Bidirectional power path control in USB-C PD 3.0 sink implementations requiring 20 V/5 A support. IC Role / Device Role / Timing Role: Low-side OR-ing FET in redundant power input architecture, enabling seamless source handover. Use Value: 73 nC gate charge allows full turn-on in <1 µs with 10 mA driver, meeting USB PD 3.0 fast role swap timing requirements. |
| Automotive Body Control Module | Industrial PLC Output Stage |
|
Use Scenario: Smart high-side switch for LED lighting and solenoid drivers in BCMs compliant with ISO 16750-2 pulse testing. IC Role / Device Role / Timing Role: Protected load switch with integrated diagnostics; monitors VDS for open-load and short-circuit detection. Use Value: AEC-Q101 qualification and 420 mJ avalanche rating ensure survival during load dump transients up to ±100 V. |
Use Scenario: 24 V DC solid-state relay replacement in programmable logic controller output modules. IC Role / Device Role / Timing Role: Fast-switching power switch driving inductive loads (valves, contactors) with active freewheeling control. Use Value: Turn-off delay time of 1.2 µs and 240 A pulsed rating support 10 kHz PWM operation without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | Higher RDS(on) (200 mΩ @ -10 V), TO-220 package, no AEC-Q101 qualification | Limited to non-automotive, low-frequency (<100 kHz) linear regulation due to thermal constraints | Select only for cost-sensitive, non-automotive prototyping where board space and switching speed are not critical. |
| DMT6009LPS-13 | Lower ID (-45 A), same RDS(on) (4.5 mΩ @ -4.5 V), smaller 2×2 mm package, no avalanche rating | Suitable for ultra-compact wearables but lacks ruggedness for industrial surge environments | Prefer for space-constrained consumer electronics where transient immunity is managed externally. |
Compared with IRF9530NPbF and DMT6009LPS-13, BSO080P03NS3EGXUMA1 uniquely balances high current, low RDS(on), AEC-Q101 compliance, and avalanche ruggedness-making it the only choice for automotive-grade 24 V battery switches requiring both efficiency and field reliability.
Availability
BSO080P03NS3EGXUMA1 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery designs, and automotive body control modules requiring stable component supply and long-term lifecycle assurance.
Supply support for BSO080P03NS3EGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
This part belongs to the OptiMOS™ 3 P-channel family, engineered specifically for high-efficiency, high-reliability power switching in automotive and industrial battery-powered systems.
FAQ
What is the maximum allowable gate-source voltage for BSO080P03NS3EGXUMA1?
The absolute maximum VGS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, use -4.5 V to -10 V; the device guarantees RDS(on) ≤ 4.8 mΩ within this range. Exceeding -20 V even momentarily invalidates warranty and may cause immediate failure.
Does BSO080P03NS3EGXUMA1 require a gate resistor in typical switching applications?
A gate resistor (10–47 Ω) is recommended to dampen ringing and limit peak gate current during fast transitions. With Qg = 73 nC and typical MCU GPIO rise times <10 ns, uncontrolled switching can induce >1 A peak gate current, risking GPIO damage or EMI. The resistor also controls dV/dt to prevent false turn-on in high-noise environments.
Can BSO080P03NS3EGXUMA1 be used in parallel configurations?
Yes-its negative temperature coefficient of RDS(on) enables inherent current sharing. For two devices, derate total current by 15% and ensure matched layout: symmetrical trace lengths, shared gate drive node, and identical thermal vias under each exposed drain pad. Do not parallel more than three units without active current balancing.
Is the exposed drain pad electrically connected to the drain terminals?
Yes-the exposed thermal pad on the bottom of the PG-TSDSON-8 package is an integral part of the drain metallization. It must be soldered to a large copper pour connected directly to the drain net. Failure to do so increases RthJA by >30% and risks thermal runaway at >30 W dissipation.
BSO080P03NS3EGXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 14.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.1V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6750 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO080P03NS3EGXUMA1 FAQ
1.How can I place an order for BSO080P03NS3EGXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO080P03NS3EGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO080P03NS3EGXUMA1 reliable?
The price and inventory of BSO080P03NS3EGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO080P03NS3EGXUMA1 is usually 5 days.
3.What payment methods are accepted for BSO080P03NS3EGXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO080P03NS3EGXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO080P03NS3EGXUMA1?
BSO080P03NS3EGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO080P03NS3EGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO080P03NS3EGXUMA1?
For technical support, including BSO080P03NS3EGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO080P03NS3EGXUMA1 requirements.
6.How does Aetrix verify that BSO080P03NS3EGXUMA1 is sourced from the original manufacturer or authorized distributors?
All BSO080P03NS3EGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO080P03NS3EGXUMA1 meets industry standards.
7.What is the process for return or replacement of BSO080P03NS3EGXUMA1?
All BSO080P03NS3EGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO080P03NS3EGXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO080P03NS3EGXUMA1 part is unused and in its original packaging.
Return procedure for BSO080P03NS3EGXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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