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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO080P03SNTMA1

Name: BSO080P03SNTMA1
Brand: Infineon Technologies
SKU: BSO080P03SNTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO080P03SNTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO080P03SNTMA1.pdf

Description:: MOSFET P-CH 30V 12.6A 8DSO

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Product details

Overview

BSO080P03SNTMA1 from Infineon Technologies is a P-channel enhancement-mode logic-level MOSFET in P-DSO-8 package, rated for -30 V V_DS, 8 mΩ R_DS(on) at -10 V V_GS, and -14.9 A continuous drain current at 25 °C ambient. It features avalanche rating, dv/dt ruggedness, and 150 °C operation-optimized for high-efficiency synchronous buck converters in industrial power supplies.

For engineers reviewing the BSO080P03SNTMA1 datasheet, BSO080P03SNTMA1 pinout, BSO080P03SNTMA1 application, or BSO080P03SNTMA1 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -1 to -2.2 V), low R_DS(on) with minimal thermal resistance (R_thJA = 70 K/W with 6 cm² copper), and integrated avalanche energy rating (E_AS = 248 mJ).

Technical Context

This MOSFET operates as a high-side or low-side switch in DC-DC conversion topologies, leveraging its negative threshold voltage and fast switching dynamics (t_r = 22–33 ns, t_f = 110–165 ns). Its gate charge profile (Q_g = -102 to -136 nC, Q_gd = -35 nC) supports efficient PWM control with minimal driver loss.

The device integrates a robust body diode with t_rr = 32–40 ns and Q_rr = -20 to -25 nC, enabling reliable synchronous rectification. Thermal design is supported by validated junction-to-ambient (R_thJA) and junction-to-solder-point (R_thJS = 35 K/W) resistance values under defined PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage in high-side configuration without breakdown
R_DS(on) max	8 mΩ at V_GS = -10 V, I_D = -14.9 A - Enables <1.2 W conduction loss at full load
V_GS(th)	-1.0 to -2.2 V - Compatible with 3.3 V or 5 V logic-level gate drivers
E_AS	248 mJ - Withstands single-pulse inductive energy during hard-switching events
t_r/t_f	22–33 ns / 110–165 ns - Supports >1 MHz switching in compact buck regulators
Q_g	-102 to -136 nC - Determines gate driver current requirement (~1.4 A peak for 100 ns rise)
T_j max	150 °C - Allows operation in sealed enclosures or high-ambient industrial environments

Pinout & Package

P-DSO-8 surface-mount package with exposed drain pad for thermal dissipation; 8-pin dual-row outline per Infineon standard P-DSO-8 drawing (Rev. 1.2).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pins)	Power Drain (common)	All pins 1–7 and pin 8 are internally connected to drain; enables parallel routing and low-inductance layout
Source (pins 1–7 bottom row, pin 8 top row)	Source terminal	Shared source connection across multiple pins reduces trace resistance and improves current sharing
Gate (pin 1 top row)	Control input	Single dedicated gate pin minimizes routing complexity and gate loop inductance

Key Features

Feature	Design Value
Avalanche rated	248 mJ single-pulse E_AS - Eliminates need for external snubbers in inductive load switching
dv/dt ruggedness	Rated for kV/µs transients - Prevents false turn-on during high-speed voltage transitions
Logic-level gate	V_GS(th) down to -1 V - Direct drive from microcontroller GPIO without level-shifting
150 °C operation	Guaranteed R_DS(on) and safe operating area up to T_j = 150 °C - Sustains performance in thermally constrained designs
OptiMOS™-P technology	Optimized P-channel cell structure - Delivers best-in-class R_DS(on) × Q_g figure of merit for efficiency-critical buck stages

Applications

Industrial DC-DC Converters

Server VRMs

Use Scenario: 12 V input to 1.2 V/100 A output point-of-load converter in programmable logic controller (PLC) backplane.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck topology, switching at 500 kHz.

Use Value: 8 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable -30 V P-MOSFETs, lowering thermal footprint on 4-layer PCB.

Use Scenario: High-density 48 V to 12 V intermediate bus converter in cloud server rack power distribution.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or buck-derived isolated topology.

Use Value: Avalanche rating ensures reliability during transient overloads (e.g., hot-swap events), eliminating need for external TVS clamping.

Automotive Body Control Modules

LED Driver Power Stages

Use Scenario: 24 V battery-fed buck regulator supplying 5 V/3 A to CAN transceiver and microcontroller in BCM.

IC Role / Device Role / Timing Role: Logic-level P-MOSFET used as reverse-polarity protection + main switch in non-isolated buck stage.

Use Value: -2.2 V max V_GS(th) guarantees turn-on even at cold cranking (6 V battery), ensuring system boot integrity.

Use Scenario: Constant-current LED driver for automotive interior lighting with dimming via PWM at 1 kHz.

IC Role / Device Role / Timing Role: Low-side current sink switch controlling LED string return path.

Use Value: Fast 33 ns rise time and low Q_gd minimize switching losses during PWM edge transitions, preserving dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB080P03L	Same P-DSO-8 package, but lower R_DS(on) (6.5 mΩ typ), higher Q_g (-150 nC), no avalanche rating	Requires external avalanche protection in inductive switching; better for ultra-low-loss steady-state loads	Select when thermal margin is critical and circuit lacks inductive energy stress
IRF4905SPBF	TO-263 package, higher R_DS(on) (20 mΩ), higher R_thJA (62 K/W), rated to 175 °C	Larger footprint and lower power density; suited for legacy through-hole or high-temp oven applications	Select when board space allows TO-263 and ambient exceeds 125 °C

Compared with IPB080P03L and IRF4905SPBF, BSO080P03SNTMA1 uniquely balances avalanche ruggedness, logic-level drive, and compact P-DSO-8 packaging-making it optimal for space-constrained, high-reliability buck converters where inductive transients and thermal management coexist.

Availability

BSO080P03SNTMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, server VRMs, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for BSO080P03SNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™-P product line, engineered specifically for high-efficiency, high-reliability P-channel power switching in space-constrained DC-DC conversion systems.

FAQ

What is the maximum continuous drain current at 70 °C ambient temperature?

The BSO080P03SNTMA1 supports -10 A continuous drain current at T_A = 70 °C with minimal footprint (no heatsink), based on its R_thJA = 150 K/W and P_tot derating curve. This value assumes FR4 PCB with 6 cm² copper area and vertical mounting in still air.

Does this MOSFET require a gate resistor for stability?

A gate resistor of 2–10 Ω is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 970–1500 pF) and PCB trace inductance. The device's dv/dt rating ensures immunity to false turn-on, but external R_G improves EMI and switching consistency in high-frequency buck stages.

Can BSO080P03SNTMA1 be used in parallel configurations?

Yes-its negative temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Parallel operation requires matched gate drive paths and symmetrical PCB layout; typical derating is 10% per additional device beyond two units.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has t_rr = 32–40 ns and Q_rr = -20 to -25 nC at 25 °C, enabling clean commutation in synchronous buck topologies up to 1 MHz. Its V_SD = -0.82 to -1.2 V at -14.9 A ensures low forward conduction loss during dead-time conduction.

BSO080P03SNTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 14.9A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 136 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.79W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO080P03SNTMA1 FAQ

1.How can I place an order for BSO080P03SNTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO080P03SNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO080P03SNTMA1 reliable?

The price and inventory of BSO080P03SNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO080P03SNTMA1 is usually 5 days.

3.What payment methods are accepted for BSO080P03SNTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO080P03SNTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO080P03SNTMA1?

BSO080P03SNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO080P03SNTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO080P03SNTMA1?

For technical support, including BSO080P03SNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO080P03SNTMA1 requirements.

6.How does Aetrix verify that BSO080P03SNTMA1 is sourced from the original manufacturer or authorized distributors?

All BSO080P03SNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO080P03SNTMA1 meets industry standards.

7.What is the process for return or replacement of BSO080P03SNTMA1?

All BSO080P03SNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO080P03SNTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO080P03SNTMA1 part is unused and in its original packaging.

Return procedure for BSO080P03SNTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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