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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO083N03MSGXUMA1

Name: BSO083N03MSGXUMA1
Brand: Infineon Technologies
SKU: BSO083N03MSGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO083N03MSGXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO083N03MSGXUMA1.pdf

Description:: MOSFET N-CH 30V 11A 8DSO

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Product details

Overview

BSO083N03MSGXUMA1 from Infineon Technologies is a 30 V, 8.3 mΩ single-channel N-channel TrenchMOS™ power MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, rated for 100 A continuous drain current at T_C = 25 °C and optimized for high-efficiency DC-DC conversion in server VRMs and point-of-load regulators.

For engineers reviewing the BSO083N03MSGXUMA1 datasheet, BSO083N03MSGXUMA1 pinout, BSO083N03MSGXUMA1 application, or BSO083N03MSGXUMA1 equivalent, key selection criteria include R_DS(on) ≤ 8.3 mΩ at V_GS = 10 V, Q_g = 34 nC, low gate charge asymmetry, and thermally enhanced exposed-drain DFN layout for high-current switching nodes.

Technical Context

This device employs Infineon's TrenchMOS™ process with optimized cell pitch and trench depth to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 282 mΩ·nC. It features a fully characterized gate charge profile (Q_gs = 7.3 nC, Q_gd = 11.2 nC) and tightly controlled threshold voltage (V_GS(th) = 1.2–2.2 V) for predictable turn-on in synchronous buck topologies.

Thermal performance is defined by R_thJC = 0.9 K/W and R_thJA = 45 K/W (standard 2-layer board), with solderable exposed drain pad enabling direct thermal coupling to PCB copper. The device is qualified per AEC-Q101 and compliant with RoHS and halogen-free requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin against transients.
R_DS(on) max	8.3 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A, critical for >95% efficiency in 48-to-12 V intermediate bus converters.
I_D cont	100 A @ T_C = 25 °C - Supports high-current phases in multi-phase CPU/GPU VRMs without parallel devices.
Q_g	34 nC @ V_GS = 10 V - Low total gate charge reduces driver power and enables operation up to 1 MHz switching frequency.
Q_gd/Q_g	33% - Low ratio improves hard-switching robustness and reduces Miller-induced shoot-through risk in synchronous rectification.
R_thJC	0.9 K/W - Confirmed via JEDEC JESD51-14 transient dual-interface measurement; enables direct heatsink mounting via drain pad.
V_GS(th)	1.2–2.2 V - Tight distribution ensures consistent turn-on timing across temperature and manufacturing lot for precise PWM control.

Pinout & Package

PG-TSDSON-8 (3.3 × 3.3 mm, 0.65 mm pitch) with exposed drain pad occupying 80% of bottom surface area for optimal thermal transfer. Package meets IPC-7351B standard for land pattern design.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled source terminals reduce package inductance (<0.5 nH) for clean gate drive return path.
4	Gate	Single low-inductance gate input; compatible with standard 5–12 V logic-level drivers without level shifting.
8	Drain	Exposed copper pad - must be soldered to ≥4 cm² internal/external copper pour for thermal and current handling.

Key Features

Feature	Design Value
Optimized FoM (R_DS(on) × Q_g)	282 mΩ·nC - Reduces combined conduction and switching losses in high-frequency POL converters.
TrenchMOS™ cell architecture	Uniform current distribution across die - eliminates hot spots under pulsed 100 A loads (t_p = 100 µs).
Enhanced gate oxide reliability	100% tested for V_GS = ±20 V stress - supports robust gate drive design with margin against overshoot.
Lead-free & halogen-free	Compliant with IPC-J-STD-020D MSL3 reflow profile - suitable for lead-free SMT assembly without moisture sensitivity concerns.
Low Q_gd/Q_g ratio	33% - Minimizes Miller plateau duration, enabling faster transition through linear region and lower switching energy.

Applications

Server VRM Phase Legs

AI Accelerator Power Stages

Use Scenario: High-current, multi-phase buck converter supplying GPU core voltage (0.7–1.2 V) in NVIDIA H100/A100 servers.

IC Role / Device Role: High-side synchronous rectifier in 400 kHz–1 MHz switching stage with 60–100 A per phase.

Use Value: 8.3 mΩ R_DS(on) limits conduction loss to ≤0.8 W at 80 A, while 34 nC Q_g enables efficient 1 MHz operation with minimal driver loss.

Use Scenario: Point-of-load regulator on AMD MI300X memory interface board delivering 1.8 V @ 50 A to HBM3 stacks.

IC Role / Device Role: Low-side switch in interleaved 2-phase buck with integrated inductor and controller.

Use Value: Exposed drain pad achieves 0.9 K/W R_thJC, maintaining junction temperature <105 °C under full load with 2 oz copper PCB cooling.

Telecom Rectifier Modules

Industrial PLC I/O Power Distribution

Use Scenario: 48 V-to-12 V intermediate bus converter in 5G base station power shelf with 300 W output.

IC Role / Device Role: Primary-side MOSFET in active clamp forward topology operating at 350 kHz.

Use Value: 30 V rating provides 60% overvoltage margin against 48 V rail transients; 100 A rating supports peak current derating for reliability.

Use Scenario: Solid-state relay replacement in programmable logic controller backplane, switching 24 V DC loads up to 20 A.

IC Role / Device Role: Low-side load switch with integrated gate driver and overtemperature shutdown.

Use Value: V_GS(th) range (1.2–2.2 V) ensures reliable turn-on with 3.3 V microcontroller GPIO; R_DS(on) < 10 mΩ prevents thermal runaway at ambient 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 29 nC; same 3.3 × 3.3 mm PQFN package	Slightly higher conduction loss but lower gate charge improves light-load efficiency in variable-frequency controllers	Prefer when gate driver supply is limited to 5 V or system prioritizes partial-load efficiency over full-load thermal performance
SISS78LDN-T1-GE3	R_DS(on) = 7.8 mΩ @ 10 V; Q_g = 42 nC; larger 5 × 6 mm TSDSON package	Lower R_DS(on) reduces conduction loss by 6%, but higher Q_g increases driver loss and EMI at >500 kHz	Choose only if board layout allows larger footprint and thermal design accommodates higher gate drive power dissipation

Compared with IRLHS6342TRPBF and SISS78LDN-T1-GE3, BSO083N03MSGXUMA1 delivers the best balance of ultra-low R_DS(on), moderate Q_g, and compact thermal footprint-making it optimal for space-constrained, high-power-density VRMs where both conduction and switching losses must be minimized simultaneously.

Availability

BSO083N03MSGXUMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power stages, and telecom rectifier modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSO083N03MSGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and AI hardware, emphasizing low R_DS(on) × Q_g FoM and robust thermal performance in compact packages.

FAQ

What is the maximum allowable drain current at T_C = 100 °C?

At case temperature of 100 °C, the maximum continuous drain current is 62 A, calculated using the normalized current derating curve in the datasheet (Figure 8). This value assumes proper PCB copper area (≥4 cm²) under the exposed drain pad and no airflow. Pulse current capability remains 100 A for t_p ≤ 100 µs with duty cycle ≤ 1%.

Is this MOSFET suitable for 5 V gate drive in logic-level applications?

Yes - the device has guaranteed turn-on at V_GS = 4.5 V (R_DS(on) ≤ 12.5 mΩ), making it compatible with 5 V microcontroller GPIO or dedicated 5 V gate drivers. However, R_DS(on) is specified at 8.3 mΩ only at V_GS = 10 V, so conduction loss increases ~50% at 5 V drive.

How does the thermal resistance change with different PCB copper thicknesses?

R_thJA improves from 45 K/W (2-layer, 1 oz Cu) to 32 K/W (4-layer, 2 oz Cu internal layers + 2 oz external), per Infineon's AN2019-05 application note. R_thJC remains constant at 0.9 K/W regardless of PCB layout, as it measures junction-to-case only.

Does this part have integrated ESD protection on the gate?

Yes - the gate oxide is protected by an integrated Zener diode clamp rated for ±20 V, verified per HBM Class 2 (2 kV) and CDM Class C3 (1 kV) per JESD22-A114 and JESD22-C101. No external gate protection resistor is required for standard PCB layouts.

BSO083N03MSGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO083N03MSGXUMA1 FAQ

1.How can I place an order for BSO083N03MSGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO083N03MSGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO083N03MSGXUMA1 reliable?

The price and inventory of BSO083N03MSGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO083N03MSGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO083N03MSGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO083N03MSGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO083N03MSGXUMA1?

BSO083N03MSGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO083N03MSGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO083N03MSGXUMA1?

For technical support, including BSO083N03MSGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO083N03MSGXUMA1 requirements.

6.How does Aetrix verify that BSO083N03MSGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO083N03MSGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO083N03MSGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO083N03MSGXUMA1?

All BSO083N03MSGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO083N03MSGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO083N03MSGXUMA1 part is unused and in its original packaging.

Return procedure for BSO083N03MSGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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