Infineon Technologies BSO104N03S

Overview

BSO104N03S from Infineon Technologies is an N-channel logic-level OptiMOS™2 power MOSFET in PG-DSO-8 package, rated for 30 V V_DS, 13 A continuous drain current at T_A = 25 °C, and 9.7 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in notebook DC/DC converters and SMPS applications requiring fast switching and low conduction loss.

For engineers reviewing the BSO104N03S datasheet, BSO104N03S pinout, BSO104N03S application, or BSO104N03S equivalent, key selection criteria include its 8.1 mΩ typical R_DS(on) at 10 V drive, 12 nC total gate charge, avalanche-rated ruggedness, JEDEC-qualified reliability, and thermal resistance of 35 K/W (junction-to-soldering point).

Technical Context

This MOSFET employs trench-based OptiMOS™2 technology optimized for high-frequency DC/DC conversion, delivering low Q_g × R_DS(on) figure-of-merit (FOM) and fast switching with t_r = 4.2–6.3 ns and t_f = 3.2–4.8 ns under standard test conditions. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates an intrinsic body diode with 0.74 V forward voltage at 2.5 A and 25 °C, and supports reverse recovery charge Q_rr ≤ 10 nC at dI/dt = 400 A/µs - critical for minimizing shoot-through loss in synchronous buck topologies.

Key Specifications

Pinout & Package

BSO104N03S is housed in PG-DSO-8 (8-pin exposed-pad SOIC), with pins 1–4 and 6–8 forming the source-drain-gate connections and pin 5 serving as the thermal pad (internally connected to drain). The exposed drain pad on the bottom surface provides primary thermal path to PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLML0030TRPBF and DMN3025LSD-13, BSO104N03S uniquely balances low R_DS(on), low Q_g, JEDEC qualification, and avalanche ruggedness - making it the only option qualified for high-volume, thermally demanding notebook DC/DC converter designs.

Availability

BSO104N03S is available at Aetrix Electronics and suitable for high-efficiency notebook DC/DC converters, synchronous buck regulators, and USB-C PD power delivery modules requiring stable component supply and long-term lifecycle support.

Supply support for BSO104N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.

BSO104N03S belongs to the OptiMOS™2 family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in portable computing and consumer power systems where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current for BSO104N03S at 70 °C ambient?

The maximum continuous drain current is 8 A at T_A = 70 °C with minimal PCB footprint, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance R_thJA = 150 K/W under steady-state conditions, ensuring safe junction temperature below 150 °C.

Is BSO104N03S suitable for synchronous rectification in a 1 MHz buck converter?

Yes - with 5.0 ns turn-on delay, 4.2 ns rise time, and 12 nC total gate charge, BSO104N03S supports clean 1 MHz switching. Its low C_oss (760 pF) and fast diode recovery (Q_rr ≤ 10 nC) minimize dead-time losses and voltage overshoot in high-frequency synchronous rectifiers.

Does the PG-DSO-8 package require special PCB layout considerations?

Yes - the exposed drain pad (Pin 5) must be soldered to ≥6 cm² of 70 µm-thick copper on the PCB's inner or bottom layer to achieve the specified R_thJS = 35 K/W. Thermal vias under the pad and symmetric trace routing for source pins are required to maintain current balance and minimize parasitic inductance.

How does the avalanche rating impact system design?

The 73 mJ single-pulse avalanche energy rating allows BSO104N03S to safely absorb inductive energy during overcurrent or short-circuit events without failure. This eliminates the need for external avalanche clamps in flyback, LLC, or hard-switched topologies - reducing BOM count and improving reliability in compact power supplies.